Analytical electro-thermal model for RF-LDMOSFET

• This paper presents the model development of Agere eletro-thermal transistor, an electro-thermal large signal nonlinear RF-LDMOSFET model used in radio frequency (RF) power amplifiers (PAs). We first describe our model schematics, then the iso-thermal and pulsed device characterization systems used in the parametrization of the model are described. The extracted model is implemented in Agilent's Advanced Design System (ADS) for the development of several PAs. Finally, the model accuracy is measured by comparing several experimental verifications of physical chips against those of EDA designs.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Analytical model

LDMOSFET

Package model

Thermal model

Transistor model

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)