Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors

• The effect of hydrogen passivation by forming gas annealing (FGA) on the bipolar junction transistor low frequency noise was investigated. The results demonstrated a reduced 1/f noise component by a factor of five after FGA, which resulted in a reduced corner frequency. An equivalent input noise spectral density (S-IB) dependence on base current (IB) of S-IB similar to I-B(2) and on emitter area (A(E)) of S-IB similar to A(E)(-1) was observed, both before and after FGA. The interpretations of the results were (a) the 1/f noise was due to carrier number fluctuation, (b) the noise sources were homogeneously distributed over the polysilicon/monosilicon emitter interfacial oxide, and

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junction transistors

base current

1/f noise

dopant

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