Low damage, highly anisotropic dry etching of SiC

• A parametric study of the etching characteristics of 6H p+ and n+ SiC and thin film SiC0.5N0.5 in Inductively Coupled Plasma NF3/O2 and NF 3/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tin-oxide (ITO) masks display relatively good etch selectivity over SiC (maximum of 70:1), while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF3:O2 conditions

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

13.56 MHz;250 W;6H n+ SiC;6H p+ SiC;750 W;ICP source power;ITO;ITO masks;InSnO;NF3;NF3 percentage;NF3-Ar;NF3-O2;NF3/Ar discharges;NF3/O2 discharges;SiC;SiC0.5N0.5;atomic F neutral concentration;etch anisotropy;etch rates;etch selectivity;etching characteristics;inductively coupled plasma;ion energy;ion flux;low damage highly anisotropic dry etching;photoresist etch;rf chuck power;surface degradation;surface roughness;thin film SiC0.5N0.5;plasma materials processing;silicon compounds;sputter etching;surface topography;wide band gap semiconductors

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