ICP etching of SiC

• A number of different plasma chemistries, including NF3/O2, SF6/O2, SF6/Ar, ICl, IBr, Cl2/Ar, BCl3/Ar and CH4/H2/Ar, have been investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool. Rates above 2,000 angstroms·cm-1 are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl2-based etching does not provide high rates, even though the potential etch products (SiCl4 and CCl4) are volatile. Photoresist masks have poor selectivity over SiC in F2-based plasmas under normal conditions, and ITO or Ni are preferred.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Fluorine compounds

Masks

Photoresists

Plasma etching

Semiconducting silicon compounds

Volatile organic compounds

Inductively coupled plasma

Silicon carbide

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