High carrier mobility in low band gap polymer-based field-effect transistors

• A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is solution-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm2 V−1 s−1.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

NATURVETENSKAP  -- Kemi -- Polymerkemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences -- Polymer Chemistry (hsv//eng)

NATURVETENSKAP  (hsv//swe)

NATURAL SCIENCES  (hsv//eng)

Nyckelord

Halvledarfysik

Semiconductor physics

Polymerkemi

Polymer chemistry

NATURAL SCIENCES

NATURVETENSKAP

Kemi

Chemistry

Fysik

Physics

TEKNIKVETENSKAP

TECHNOLOGY

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