Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise

• This study investigates recovery time of the gain of AlGaN/GaN HEMT   based low noise amplifiers (LNA) after an input overdrive pulse. Three   LNAs, fabricated in two commercial MMIC processes and a Chalmers   in-house process, are evaluated. The Chalmers process has an   unintentionally doped buffer instead of the intentional Fe doping of the   buffer which is standard in commercial GaN HEMT technologies. It is   shown that the LNAs from the two commercial processes experience a   severe drop in gain after input overdrive pulses higher than 28 dBm,   recovering over a duration of around 20 ms. In contrast the LNA   fabricated in-house at Chalmers experienced no visible effects up to an   input power of 33 dBm. These results have impact for radar and   electronic warfare receivers, which need to be operational immediately   after an overdrive pulse. The long time constants suggest that these   effects are due to trapping in the transistors with the Fe doped buffer   playing an important role.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Gallium nitride

low-noise amplifiers

robustness

MMICs

Publikations- och innehållstyp

art (ämneskategori)

ref (ämneskategori)