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Träfflista för sökning "swepub ;pers:(Larsson Anders);pers:(Larsson Anders 1957);pers:(Haglund Åsa 1976);pers:(Modh Peter 1968)"

Sökning: swepub > Larsson Anders > Larsson Anders 1957 > Haglund Åsa 1976 > Modh Peter 1968

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  • Gustavsson, Johan, 1974, et al. (författare)
  • Mode and polarization control in VCSELs using shallow surface structures
  • 2007
  • Ingår i: IET Optoelectronics. ; 1:5, s. 197-205
  • Tidskriftsartikel (refereegranskat)abstract
    • Monolithic techniques for mode and polarisation control in vertical-cavity surface emitting lasers (VCSELs) using shallow surface structures are summarized and put in the context with other techniques in terms of performance and manufacturability. The method of using circular-symmetric surface structures for mode control and their combination with a sub-wavelength surface grating for simultaneous mode and polarisation control is described in detail, and adherent experimental results for both 850-nm and 1.3-µm oxide-confined VCSELs are presented.
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  • Wang, Shu Min, 1963, et al. (författare)
  • Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE
  • 2011
  • Ingår i: Physica Status Solidi (B): Basic Research. - : Wiley. - 1521-3951 .- 0370-1972. ; 248:5, s. 1207-1211
  • Tidskriftsartikel (refereegranskat)abstract
    • In this paper, we report recent progresses on growth of dilute nitrides and 1.3 mu m lasers on GaAs using molecular beam epitaxy at Chalmers University of Technology, Sweden. Intense long wavelength light emission up to 1.71 mu m at room temperature has been achieved by using the N irradiation method and the low growth rate. It is also demonstrated that incorporation of N in relaxed InGaAs buffer grown on GaAs strongly enhances the optical quality of metamorphic InGaAs quantum wells. With the optimized growth conditions and the laser structures, we demonstrate 1.3 mu m GaInNAs edge emitting lasers on GaAs with state-of-the-art performances including a low threshold current density, a high-characteristic temperature, a 3 dB bandwidth of 17 GHz and uncooled operation at 10 Gbit/s up to 110 degrees C. The laser performances are comparable with the best reported data from the InGaAsP lasers on InP and is superior to the InAs quantum dot lasers on GaAs.
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