| 1. |
- Dai, Daoxin, et al.
(författare)
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Gain enhancement in a hybrid plasmonic nano-waveguide with a low-index or high-index gain medium
- 2011
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Ingår i: Optics Express. - 1094-4087. ; 19:14, s. 12925-12936
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Tidskriftsartikel (refereegranskat)abstract
- A theoretical investigation of a nano-scale hybrid plasmonic waveguide with a low-index as well as high-index gain medium is presented. The present hybrid plasmonic waveguide structure consists of a Si substrate, a buffer layer, a high-index dielectric rib, a low-index cladding, a low-index nano-slot, and an inverted metal rib. Due to the field enhancement in the nano-slot region, a gain enhancement is observed, i.e., the ratio partial derivative G/partial derivative g > 1, where g and G are the gains of the gain medium and the TM fundamental mode of the hybrid plasmonic waveguide, respectively. For a hybrid plasmonic waveguide with a core width of w(co) = 30nm and a slot height of h(slot) = 50nm, the intrinsic loss could be compensated when using a low-index medium with a moderate gain of 176dB/cm. When introducing the high-index gain medium for the hybrid plasmonic waveguide, a higher gain is obtained by choosing a wider core width. For the high-index gain case with h(slot) = 50nm and w(co) = 500nm, a gain of about 200dB/cm also suffices for the compensation of the intrinsic loss.
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| 2. |
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| 3. |
- Dai, Daoxin, et al.
(författare)
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Silicon hybrid plasmonic submicron-donut resonator with pure dielectric access waveguides
- 2011
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Ingår i: Optics Express. - 1094-4087. ; 19:24, s. 23671-23682
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Tidskriftsartikel (refereegranskat)abstract
- Characteristic analyses are given for a bent silicon hybrid plasmonic waveguide, which has the ability of submicron bending (e.g., R = 500nm) even when operating at the infrared wavelength range (1.2 mu m similar to 2 mu m). A silicon hybrid plasmonic submicron-donut resonator is then presented by utilizing the sharp-bending ability of the hybrid plasmonic waveguide. In order to enable long-distance optical interconnects, a pure dielectric access waveguide is introduced for the present hybrid plasmonic submicron-donut resonator by utilizing the evanescent coupling between this pure dielectric waveguide and the submicron hybrid plasmonic resonator. Since the hybrid plasmonic waveguide has a relatively low intrinsic loss, the theoretical intrinsic Q-value is up to 2000 even when the bending radius is reduced to 800nm. By using a three-dimensional finite-difference time-domain (FDTD) method, the spectral response of hybrid plasmonic submicron-donut resonators with a bending radius of 800nm is simulated. The critical coupling of the resonance at around 1423nm is achieved by choosing a 80nm-wide gap between the access waveguide and the resonator. The corresponding loaded Q-value of the submicron-donut resonator is about 220.
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| 4. |
- Dai, Daoxin, et al.
(författare)
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Ultracompact silicon nanowire circuits for optical communication and optical sensing
- 2011
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Ingår i: 2011 IEEE Winter Topical. - 9781424484287 ; , s. 25-26
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Konferensbidrag (refereegranskat)abstract
- By utilizing Si nanowires, ultracompact photonic integrated circuits are realized. Some Si hybrid plasmonic waveguides are also introduced for subwavelength optical confinement and low loss propagation. We review our recent work on Si nanophotonic integrated circuits and their applications.
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| 5. |
- Thylén, Lars, et al.
(författare)
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Complementing or replacing silicon and III–Vs: The role of plasmonics and novel materials in future integrated photonics for telecom and interconnects
- 2011
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Ingår i: 2011 13th International Conference on Transparent Optical Networks, ICTON 2011. - : IEEE Communications Society. - 9781457708817 - 9781457708800
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Konferensbidrag (refereegranskat)abstract
- Integrated photonics has largely been based on silicon/silica and III-Vs in recent times. Both have their advantages and disadvantages, but neither seem capable of supporting a further significant reduction of device footprint to sustain the exponential decrease of this important parameter that we have witnessed since decades. The talk will analyze different aspects of plasmonics from this and a functionality point of view and further discuss some possible alternative materials.
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| 7. |
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| 8. |
- Thylén, Lars, et al.
(författare)
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Metamaterials- and Nanotechnology-based Low Power and Small Footprint Integrated Photonics
- 2011
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Ingår i: 2011 IEEE Photonics Conference (PHO). - : IEEE Communications Society. - 9781424489404 ; , s. 537-538
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Konferensbidrag (refereegranskat)abstract
- Integrated nanophotonics has shown a remarkable development in recent years and can find applications in virtually all fields of photonics, though its predominant focus has so far been in telecom and lately computer interconnects. This progress has primarily been based on nanoand ΠI-V technology development, the introduction of silicon technology, with larger refractive index contrast than previously available, as well as subwavelength plasmonics structures. For the latter, a main problem, especially for ICT applications, has been the large optical loss associated with deep subwavelength confinement, as in this paper.
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| 9. |
- Wang, J., et al.
(författare)
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Sub-μm2 power splitters by using silicon hybrid plasmonic waveguides
- 2011
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Ingår i: Optics Express. - : Optical Society of America. - 1094-4087. ; 19:2, s. 838-847
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Tidskriftsartikel (refereegranskat)abstract
- Nano-scale power splitters based on Si hybrid plasmonic waveguides are designed by utilizing the multimode interference (MMI) effect as well as Y-branch structure. A three-dimensional finite-difference time-domain method is used for simulating the light propagation and optimizing the structural parameters. The designed 1×2 50:50 MMI power splitter has a nano-scale size of only 650 nm×530 nm. The designed Y-branch power splitter is also very small, i.e., about 900 nm×600 nm. The fabrication tolerance is also analyzed and it is shown that the tolerance of the waveguide width is much larger than±50 nm. The power splitter has a very broad band of over 500 nm. In order to achieve a variable power splitting ratio, a 2×2 two-mode interference coupler and an asymmetric Y-branch are used and the corresponding power splitting ratio can be tuned in the range of 97.1%:2.9%-1.7%:98.3% and 84%:16%-16%:84%, respectively. Finally a 1×4 power splitter with a device footprint of 1.9 μm×2.6 μm is also presented using cascaded Y-branches.
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