31. |
- Paskova, Tanja, 1961-, et al.
(författare)
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Strain-free low-defect-density bulk GaN with nonpolar orientation
- 2006
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Ingår i: MRS Proceedings 2006 MRS Fall Meeting. - New York, NY, United States : Materials Research Society. ; , s. I3.4-
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Konferensbidrag (refereegranskat)abstract
- Bulk GaN sliced in bars along (11-20) and (1-100) planes from a boule grown in the [0001] direction by HVPE was confirmed as strain free material with a low dislocation density by using several characterization techniques. The high-structural quality of the material allows photoluminescence studies of free excitons, principal donor bound excitons and their two-electron satellites with regard to the optical selection rules. Raman scattering study of the bulk GaN with nonpolar orientations allows a direct access to the active phonon modes and a direct determination of their strain-free positions.
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32. |
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33. |
- Strocov, V.N., et al.
(författare)
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Band structure effects in nitrogen K-edge resonant inelastic X-ray scattering from GaN
- 2004
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Ingår i: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 241:7
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Tidskriftsartikel (refereegranskat)abstract
- Systematic experimental data on resonant inelastic X-ray scattering (RIXS) in GaN near the N K-edge are presented for the first time. Excitation energy dependence of the spectral structures manifests the band structure effects originating from momentum selectivity of the RIXS process. This finding allows obtaining k-resolved band structure information for GaN crystals and nanostructures. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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34. |
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