| 41. |
- Engström, Olof, 1943
(författare)
-
Electron states in MOS systems (Invited)
- 2011
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Ingår i: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. - 9781566778657 ; 35:4, s. 19 -38
-
Konferensbidrag (refereegranskat)abstract
- The properties of charge carrier traps in the oxide bulk, at high-k/silicon transition regions, at the silicon interface and as dipoles are discussed from physical and electrical perspectives. In order to elucidate the charging properties of oxide traps, the statistical mechanics for occupation is derived based on a constant pressure ensemble and used to interpret the influence of negative-U states occurring in high-k oxides. For the transition region close to the silicon interface, the existence of unstable traps in the continuous shift of the energy bands between SiO2 and HfO2 is pointed out. The physical background for electrical measurements on interface states is examined and, finally, dipoles constituted by traps in high-k dielectrics for regulating threshold voltage of MOS transistors are considered.
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| 42. |
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| 43. |
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| 44. |
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| 45. |
- Engström, Olof, 1943
(författare)
-
Foreword
- 2010
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101. ; 54:2, s. 85-85
-
Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)
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| 46. |
- Engström, Olof, 1943
(författare)
-
Future high-k gate stack materials
- 2008
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Ingår i: Tutorial, ESSDERC 08, Edinburgh, September, 2008.
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 47. |
- Engström, Olof, 1943, et al.
(författare)
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Gate stacks
- 2013
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Ingår i: Nanoscale CMOS: Innovative Materials, Modeling and Characterization. - : Wiley. ; , s. 23 - 67
-
Bokkapitel (övrigt vetenskapligt/konstnärligt)
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| 48. |
- Engström, Olof, 1943
(författare)
-
High-k dielectrics and metal gates
- 2008
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Ingår i: MIGAS '8, Summer School, Autrans, July 2008.
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 49. |
- Engström, Olof, 1943, et al.
(författare)
-
Influence of interlayer properties on the characteristics of high-k gate stacks
- 2012
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101. ; 75, s. 63-68
-
Tidskriftsartikel (refereegranskat)abstract
- The significance of interface sharpness between interlayers and high-k oxides for the properties of transistor gate-stacks has been investigated. Energy band variation in the oxide is calculated by using literature data for the HfO2/SiO2 interface, assuming two different cases for the interface plane: flat with a gradual depth variation of k-value and rough with an abrupt change of k. We demonstrate that the capacitive properties are similar, whereas tunneling properties considerably differ between the two cases. Furthermore, depth distributions of tunneling effective mass and dielectric constant have a substantial influence on the probability for charge carrier tunneling through the oxide stack and for the determination of capacitance equivalent oxide thickness (CET).
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| 50. |
- Engström, Olof, 1943, et al.
(författare)
-
Internal photoemission technique for high-k oxide/semiconductor band offset determination: The influence of semiconductor bulk properties
- 2014
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Ingår i: 44th European Solid-State Device Research Conference, ESSDERC 2014, Palazzo del CasinoVenezia Lido, Italy, 22-26 September 2014. - 1930-8876. - 9781479943784 ; , s. 369-372
-
Konferensbidrag (refereegranskat)abstract
- A method for extracting energy band alignment of metal/high-k oxide/semiconductor structures from internal photoemission experiments is discussed by modeling the excitation and relaxation processes taking place in the semiconductor at photon irradiation. Classical literature data on photoemission of electrons from silicon and germanium surfaces into vacuum is compared with more recently published data on HfO2/Si and HfO2/Ge structures to identify characteristic features of photoelectric yield. We find that a dominating structure of such spectra, which often has been assumed to originate from the oxide barrier, derives from the energy dependence of absorption coefficient and mean free paths of excited electrons. Our results indicate that most IPE data on high-k oxide/silicon and germanium structures need re-interpretation.
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