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- Bengtsson, Stefan, 1961, et al.
(författare)
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Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces
- 1990
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Ingår i: ESSDERC 90. 20th European Solid State Device Research Conference. ; , s. 1-
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Konferensbidrag (refereegranskat)abstract
- Measurement methods for characterizing the electrical properties of directly bonded Si/Si n/n-type or p/p-type interfaces are presented. The density of interface states in the bandgap of the semiconductor and the density of interface charges at the bonded interface are determined from measurements of current and capacitance vs. applied voltage
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| 2. |
- Bengtsson, Stefan, 1961, et al.
(författare)
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Charge densities at silicon interfaces prepared by wafer bonding
- 1990
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Ingår i: 1990 IEEE SOS/SOI Technology Conference.. ; , s. 77-
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Tidskriftsartikel (refereegranskat)abstract
- It is found that Si/Si and Si/SiO2 interfaces exhibit different interface charge properties when bonded at comparable temperatures and surface treatments. Thermally grown oxides were bonded to bare silicon surfaces and the bonded Si/SiO2 interface was investigated on MOS-structures by the C-V technique. Interfaces prepared at temperatures in the range 900-1100°c exhibited U-shaped interface state densities. Si/Si samples were prepared using a hydrophilizing surface treatment before wafer bonding. At the same annealing temperatures, the interface state densities of the bonded Si/Si interfaces were in the range 1011-1013 cm-2 eV-1. Si/Si interfaces are found to be very sensitive to prebond chemical treatment, while Si/SiO2 interfaces are not. Native oxides at bonded silicon interfaces have a more pronounced influence on Si/Si interfaces than on Si/SiO2 interfaces
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| 5. |
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| 6. |
- Bengtsson, Stefan, 1961, et al.
(författare)
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Oxide degradation of wafer bonded MOS capacitors following Fowler-Nordheim electron injection
- 1992
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Ingår i: Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications. ; , s. 339-
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Konferensbidrag (refereegranskat)abstract
- The degradation of wafer bonded silicon dioxides as a result of Fowler-Nordheim electron injection has been studied. The samples were MOS capacitors with wafer bonded SiO2-SiO2 interfaces at the oxide center. The charge trapping in the oxide and the Si-SiO2 interface state generation were monitored as a function of injected charge and compared to reference MOS capacitors without bonded interfaces. A larger change in the oxide charge was found in the bonded capacitors as compared to the reference structures. The centroid of trapped negative oxide charge was found to be located close to the SiO2-SiO2 interface in the bonded structures, while the reference structures exhibited centroids close to the injecting contact. The electron injection caused approximately the same generation of interface states in both groups of capacitors
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| 7. |
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| 8. |
- Engström, Olof, 1943, et al.
(författare)
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Electrical characterization of bonding interfaces
- 1992
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Ingår i: Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications. ; , s. 295-
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Konferensbidrag (refereegranskat)abstract
- An overview is given on measurement techniques and results obtained for the characterization of bonded Si-Si, Si-SiO2 and SiO2-SiO2 interfaces. The electrical properties of Si-Si interfaces are found to be very similar to those of grain boundaries, which suggests a model where the current across the interface is limited by a potential barrier determined by charge carriers captures into electron states at the bonded interface. From current-voltage and capacitance-voltage measurements, the interface charge and its energy distribution can be determined. For bonded Si-SiO2 interfaces, energy states distributions are obtained by capacitance voltage technique with midgap densities in the region at or above 5 1010 eV-1 cm-2. Interfaces between two bonded SiO2 layers exhibit an increased concentration of electron traps
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