| 331. |
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| 332. |
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| 333. |
- Sun, Peng, 1979, et al.
(författare)
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High temperature aging study of intermetallic compound formation of Sn-3,5Ag and Sn-4.0Ag-0,5Cu solders on electroless Ni(P) metallization
- 2006
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Ingår i: Journal of Alloys and Compounds. - : Elsevier BV. - 0925-8388. ; 425:1-2, s. 191-199
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Tidskriftsartikel (refereegranskat)abstract
- The Sn-3.5Ag and Sn-4.0Ag-0.5Cu solders on Au/electroless Ni(P) metallization exhibited different interfacial morphologies after high temperature storage (HTS) at 150 °C. Ni 3 Sn 4 intermetallic compounds (IMCs) were found in the Sn-Ag system, while for the Sn-Ag-Cu system the IMCs consisted of two kinds of interfacial reactions. For the Sn-3.5Ag solder, the Ni 3 Sn 4 IMC particles lost adhesion/contact to the electroless Ni(P) layer and clear gap was observed in the samples after high temperature storage (HTS) aging for 1000 h. In the Sn-4.0Ag-0.5Cu solder joint, both (Cu,Ni) 6 Sn 5 and (Ni,Cu) 3 Sn 4 compounds were observed after HTS aging. Since the difference in nucleation site and growth rate for kinds of IMCs, (Cu,Ni) 6 Sn 5 was observed at top and (Ni,Cu) 3 Sn 4 at bottom when the interfacial compound layer became thicker as a function of thermal aging. Some voids were found between the electroless Ni(P) interface and the Sn-Ag solder after 168 and 500 h of thermal aging, while the clear gap between the solder and the Ni layer existed after 1000 h aging. The formation mechanism for this gap could be the interconnection and growth of the voids. In the Sn-Ag-Cu system, voids were found inside the Sn-Ni-Cu ternary interfacial compounds after 500 and 1000 h. The formation mechanism for these voids was thought to be Kirkendall effect or etching process. The interfacial layer of Sn-Ag-Cu solder on electroless Ni(P) coating showed the better thermal stable than eutectic Sn-Ag solder. © 2006 Elsevier B.V. All rights reserved.
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| 334. |
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| 335. |
- Sun, Peng, 1979, et al.
(författare)
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Intermetallic Compound Formation in Sn-Co-Cu, Sn-Ag-Cu and Eutectic Sn-Cu Solder Joints on Electroless Ni(P) Immersion Au Surface Finish After Reflow Soldering
- 2006
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Ingår i: Materials Science & Engineering B: Solid-State Materials for Advanced Technology. - : Elsevier BV. - 0921-5107. ; 135:2, s. 134-140
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Tidskriftsartikel (refereegranskat)abstract
- The interfacial reactions between Sn-0.4Co-0.7Cu eutectic alloy and immersion Au/electroless Ni(P)/Cu substrate were investigated after reflow soldering at 260 °C for 2 min. Common Sn-4.0Ag-0.5Cu and eutectic Sn-0.7Cu solders were used as reference. Two types of intermetallic compounds (IMC) were found in the solder matrix of the Sn-0.4Co-0.7Cu alloy, namely coarser CoSn 2 and finer Cu 6 Sn 5 particles, while only one ternary (Cu, Ni) 6 Sn 5 interfacial compound was detected between the solder alloy and the electroless nickel and immersion gold (ENIG) coated substrate. The same trend was also observed for the Sn-Ag-Cu and Sn-Cu solder joints. Compared with the CoSn 2 particles found in the Sn-Co-Cu solder and the Ag 3 Sn particles found in the Sn-Ag-Cu solder, the Cu 6 Sn 5 particles found in both solder systems exhibited finer structure and more uniform distribution. It was noted that the thickness of the interfacial IMCs for the Sn-Co-Cu, Sn-Ag-Cu and Sn-Cu alloys was 3.5 μm, 4.3 μm and 4.1 μm, respectively, as a result of longer reflow time above the alloy's melting temperature since the Sn-Ag-Cu solder alloy has the lowest melting point. © 2006 Elsevier B.V. All rights reserved.
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| 336. |
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| 337. |
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| 338. |
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| 339. |
- Sun, Shuangxi, 1986, et al.
(författare)
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Cooling hot spots by hexagonal boron nitride heat spreaders
- 2015
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Ingår i: Proceedings - Electronic Components and Technology Conference. - 0569-5503. - 9781479986095 ; http://www.grapchina.com/Fhzt/view/id/96.html
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Konferensbidrag (refereegranskat)abstract
- As the electronic systems become smaller and faster, a thinner and higher-efficiency heat spreader is demanded to meet the thermal dissipation requirement. In this work, we proposed a layered hBN film based heat spreader to dissipate the thermal energy generated by hot spots on high power chips. The liquid phase exfoliation method was employed to synthesize hBN flakes. Different layers of hBN film were characterized using SEM, TEM and Raman spectroscopy. Afterwards, the films were directly attached onto the target power chips. The power chips were integrated with temperature sensor and hot spot in order to analyze the thermal performance of the hBN heat spreader. IR Camera was used to capture the heat spreading effect of the hBN heat spreader and monitor the temperature distribution around the hot spot. The temperature at the hot spot driven by a heat flux of around 600W/cm2 was decreased by about 20% compared to the sample without the BN film. The potential of using hBN heat spreader for cooling hot spots was demonstrated in this work.
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| 340. |
- Sun, Shuangxi, 1986, et al.
(författare)
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Dissipating Heat from Hot Spot Using a New Nano Thermal Interface Material
- 2012
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Ingår i: Proceedings of IEEE CPMT 2012 International Conference on Electronic Packaging Technology & High Density Packaging. - 9781467316804 ; :Article number 6474593, s. 171-176
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Konferensbidrag (refereegranskat)abstract
- The need for faster, smaller, more reliable and efficient products has resulted in increased heat generated in microelectronic components. Removal of the heat generated is an important issue in electronic packaging. Therefore, a novel Nano-Thermal Interface Material was developed to improve this. This paper aims at studying the thermal performance of the new nano-structured polymer-metal composite film (Nano-TIM) in application for dissipating around hot spots which exist in non-uniform power generation. Through semiconductor process and Micron-RTD principle, 5*5mm 2 thermal test chips were developed to serve as a heat source for detecting the heat dissipation effect of the Nano-TIM. T3Ster test system and IR Camera were used to measure partial thermal resistance of the 50 and 75 um Nano-TIM layer and study the spread of different hot spot positions in 10*10mm 2 power chip. We also studied the hot spot dissipation effect under different die attach areas with the Nano-TIM. According to the results of this study, this new class of Nano-TIM can meet the high requirements for hot spot dissipation of highly non-uniform power distribution in electronics packaging. © 2012 IEEE.
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