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Träfflista för sökning "WFRF:(Lu W) srt2:(2000-2004);mspu:(article)"

Sökning: WFRF:(Lu W) > (2000-2004) > Tidskriftsartikel

  • Resultat 11-18 av 18
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11.
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12.
  • Li, Z-F, et al. (författare)
  • Determination of carrier-transfer length from side-wall quantum well to quantum wire by micro-photoluminescence scanning
  • 2003
  • Ingår i: Journal of Electronic Materials. - : Springer Science Business Media. - 0361-5235 .- 1543-186X. ; 32:8, s. 913-916
  • Tidskriftsartikel (refereegranskat)abstract
    • Micro-photoluminescence (mu-PL) line scanning across a single V-groove, GaAs/AlGaAs quantum wire (QWR) has been performed at room temperature, revealing a clear spatial-dependence of the PL. After fitting each PL spectrum by multi-Gaussian line shapes, intensity profiles of each PL component from confined structures have been obtained as functions of the scanning position. The PL quenching of a side-wall quantum well (SQWL) has been recognized in a certain area in the vicinity of the QWR and is interpreted by carrier transfer into the QWR within effective transfer length. By simulating the carrier-transfer process from SQWL to QWR as a convolution of a step function for carrier distribution and a Gaussian function for exciting laser irradiance, the effective transfer length of about 1.8+/-0.3 mum has, therefore, been concluded.
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14.
  • Lu, W, et al. (författare)
  • Enhancement of room-temperature photoluminescence in InAs quantum dots
  • 2003
  • Ingår i: Applied Physics Letters. - : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 83:21, s. 4300-4302
  • Tidskriftsartikel (refereegranskat)abstract
    • We report pronounced enhancement of room-temperature photoluminescence up to 80-fold induced by proton implantation and the rapid thermal annealing process in a multilayer InAs/GaAs quantum-dot structure. This effect is studied by a combination of material methods and resulted from both proton passivation and carrier capture enhancement effects. The maximum photoluminescence peak shift is about 23 meV, resulting from the intermixing of quantum dots. Linear dependence behavior as observed for both the nonradiative recombination time and carrier relaxation time on the ion-implantation dose. Maximum enhancement of the photoluminescence is observed for a proton implantation dose of 1.0x10(14) cm(-2) followed by rapid thermal annealing at 700 degreesC. These effects will be useful for quantum dot optoelectronic devices.
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15.
  • Scherer, SW, et al. (författare)
  • Human chromosome 7: DNA sequence and biology
  • 2003
  • Ingår i: Science (New York, N.Y.). - : American Association for the Advancement of Science (AAAS). - 1095-9203 .- 0036-8075. ; 300:5620, s. 767-772
  • Tidskriftsartikel (refereegranskat)abstract
    • DNA sequence and annotation of the entire human chromosome 7, encompassing nearly 158 million nucleotides of DNA and 1917 gene structures, are presented. To generate a higher order description, additional structural features such as imprinted genes, fragile sites, and segmental duplications were integrated at the level of the DNA sequence with medical genetic data, including 440 chromosome rearrangement breakpoints associated with disease. This approach enabled the discovery of candidate genes for developmental diseases including autism.
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16.
  • Sun, S. G., et al. (författare)
  • Synthesis of a series of rhenium(I) bipyridyl complexes as photosensitive dyes
  • 2004
  • Ingår i: Gaodeng xuéxiào huàxué xuébào. - 0251-0790. ; 25:5, s. 820-822
  • Tidskriftsartikel (refereegranskat)abstract
    • In order to study the effects of the substituted groups on the properties of the complexes, a series of rhenium ( I ) 2, 2'-bipyridyl complexes [fac- (4, 4'-di-COOEt-bpy) Re (CO)(3) (X-pyridine) PF6], where bpy is 2,2'-bipyridine and X is 4-methyl, 3-hydroxy, 4-hydroxy, 4-amino, or H, were synthesized with a yield more than 90%, and characterized by H-1 NMR, C-13 NMR, 2D-NMR (H-1-H-1 COSY, HMBC, HSQC), ESI-MS and HRMS. The delta(H) values on the X-pyridine ring were shifted to up-field in H-1 NMR and the MLCT absorbance maxima were red-shifted as the X groups became more electron-donating from H to 4-methyl, 4-hydroxy or 4-amino. The ESI-MS and FIRMS showed the mono-charged peaks and their isotopic peaks of the complexes. The absorption maximum of id(X=4-amino) is 20 nm longer than that of 1e(X=H). It might be used to broaden the absorption range of solar cells.
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18.
  • Zhao, Q.X., et al. (författare)
  • Dynamic properties of radiative recombination in p-type d-doped layers in GaAs
  • 2001
  • Ingår i: Physical Review B. - : American Physical Society. - 2469-9950 .- 2469-9969. ; 63
  • Tidskriftsartikel (refereegranskat)abstract
    •  We present an optical study of thin Zn-doped GaAs layers embedded in bulk GaAs, grown by metal-organic vapor-phase-epitaxy by means of stationary and time-resolved optical spectroscopy. The concentration of the Zn acceptors was aimed at 2×1020/cm3 in 4-nm-wide doping regions. The intensity of the optical radiative transition (so called the F emission) appearing in photoluminescence spectra was found to be related to holes confined at doping regions. The F emission shows a strong dependence on excitation intensity and temperature. The energy position varies from 1.46 to 1.49 eV as the excitation density changes from about 40 mW/cm2 to 23 W/cm2. The dynamic properties of the F-emission band have been studied by time-resolved spectroscopy. The F emission shows a nonexponential decay character. The decay time of the F emission exhibits a strong dependence on the detection energy within the F-emission band. The decay time becomes longer as the detection energy is redshifted.
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  • Resultat 11-18 av 18

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