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Träfflista för sökning "LAR1:lu srt2:(2010-2011);pers:(Messing Maria)"

Sökning: LAR1:lu > (2010-2011) > Messing Maria

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  • Messing, Maria, et al. (författare)
  • Growth of Straight InAs-on-GaAs Nanowire Heterostructures.
  • 2011
  • Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 11:9, s. 3899-3905
  • Tidskriftsartikel (refereegranskat)abstract
    • One of the main motivations for the great interest in semiconductor nanowires is the possibility of easily growing advanced heterostructures that might be difficult or even impossible to achieve in thin films. For III-V semiconductor nanowires, axial heterostructures with an interchange of the group III element typically grow straight in only one interface direction. In the case of InAs-GaAs heterostructures, straight nanowire growth has been demonstrated for growth of GaAs on top of InAs, but so far never in the other direction. In this article, we demonstrate the growth of straight axial heterostructures of InAs on top of GaAs. The heterostructure interface is sharp and we observe a dependence on growth parameters closely related to crystal structure as well as a diameter dependence on straight nanowire growth. The results are discussed by means of accurate first principles calculations of the interfacial energies. In addition, the role of the gold seed particle, the effect of its composition at different stages during growth, and its size are discussed in relation to the results observed.
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  • Suyatin, Dmitry, et al. (författare)
  • Nano-Schottky contacts realized by bottom-up technique
  • 2010
  • Ingår i: INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. - Piscataway, N.J. : IEEE Press. - 9781424435432 ; , s. 252-253
  • Konferensbidrag (refereegranskat)abstract
    • Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts. Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the InAs segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.
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  • Resultat 21-30 av 34

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