| 1. |
- Aiempanakit, Montri, et al.
(författare)
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Effect of peak power in reactive high power impulse magnetron sputtering of titanium dioxide
- 2011
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Ingår i: Surface & Coatings Technology. - : Elsevier BV. - 0257-8972 .- 1879-3347. ; 205:20, s. 4828-4831
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Tidskriftsartikel (refereegranskat)abstract
- The effect of peak power in a high power impulse magnetron sputtering (HiPIMS) reactive deposition of TiO(2) films has been studied with respect to the deposition rate and coating properties. With increasing peak power not only the ionization of the sputtered material increases but also their energy. In order to correlate the variation in the ion energy distributions with the film properties, the phase composition, density and optical properties of the films grown with different HiPIMS-parameters have been investigated and compared to a film grown using direct current magnetron sputtering (DCMS). All experiments were performed for constant average power and pulse on time (100W and 35 mu s, respectively), different peak powers were achieved by varying the frequency of pulsing. Ion energy distributions for Ti and O and its dependence on the process conditions have been studied. It was found that films with the highest density and highest refractive index were grown under moderate HiPIMS conditions (moderate peak powers) resulting in only a small loss in mass-deposition rate compared to DCMS. It was further found that TiO2 films with anatase and rutile phases can be grown at room temperature without substrate heating and without post-deposition annealing.
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| 2. |
- Aiempanakit, Montri, et al.
(författare)
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Hysteresis and process stability in reactive high power impulse magnetron sputtering of metal oxides
- 2011
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 519:22, s. 7779-7784
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Tidskriftsartikel (refereegranskat)abstract
- In the further development of reactive sputter deposition, strategies which allow for stabilization of the transition zone between the metallic and compound modes, elimination of the process hysteresis, and increase of the deposition rate, are of particular interest. In this study, the hysteresis behavior and the characteristics of the transition zone during reactive high power impulse magnetron sputtering (HiPIMS) of Al and Ce targets in an Ar-O(2) atmosphere as a function of the pulsing frequency and the pumping speed are investigated. Comparison with reactive direct current magnetron sputtering (DCMS) reveals that HiPIMS allows for elimination/suppression of the hysteresis and a smoother transition from the metallic to the compound sputtering mode. For the experimental conditions employed in the present study, optimum behavior with respect to the hysteresis width is obtained at frequency values between 2 and 4 kHz, while HiPIMS processes with values below or above this range resemble the DCMS behavior. Al-O films are deposited using both HiPIMS and DCMS. Analysis of the film properties shows that elimination/suppression of the hysteresis in HiPIMS facilitates the growth of stoichiometric and transparent Al(2)O(3) at relatively high deposition rates over a wider range of experimental conditions as compared to DCMS.
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| 3. |
- Aijaz, Asim, et al.
(författare)
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Synthesis of amorphous carbon thin films using acetylene-based high power impulse magnetron sputtering discharges
- 2013
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Amorphous carbon (a-C) thin films are synthesized using high power impulse magnetron sputtering (HiPIMS) based Ne-Ar/C2H2 discharges. Plasma properties and film growth are investigated under different gas phase composition and operating pressures. Film mass densities, H content, hardness and compressive stresses are measured. Mass densities in the order of 2.2 g/cm3, hardness close to 25 GPa and H content as low as 11% are obtained. The film properties manifest a dependence on energy and flux of the depositing species and energetic ion bombardment driven structural changes in the films are found to govern the resulting film properties.
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| 4. |
- Andersen, Ken, et al.
(författare)
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B-10 multi-grid proportional gas counters for large area thermal neutron detectors
- 2013
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Ingår i: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - : Elsevier BV. - 0167-5087 .- 0168-9002 .- 1872-9576. ; 720, s. 116-121
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Tidskriftsartikel (refereegranskat)abstract
- He-3 was a popular material in neutrons detectors until its availability dropped drastically in 2008. The development of techniques based on alternative convertors is now of high priority for neutron research institutes. Thin films of B-10 or (B4C)-B-10 have been used in gas proportional counters to detect neutrons, but until now, only for small or medium sensitive area. We present here the multi-grid design, introduced at the ILL and developed in collaboration with ESS for LAN (large area neutron) detectors. Typically thirty (B4C)-B-10 films of 1 mu m thickness are used to convert neutrons into ionizing particles which are subsequently detected in a proportional gas counter. The principle and the fabrication of the multi-grid are described and some preliminary results obtained with a prototype of 200 cm x 8 cm are reported; a detection efficiency of 48% has been measured at 2.5 angstrom with a monochromatic neutron beam line, showing the good potential of this new technique. (C) 2013 Elsevier B.V. All rights reserved.
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| 5. |
- Beckers, Manfred, et al.
(författare)
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Formation of basal plane fiber-textured Ti2AlN films on amorphous substrates
- 2010
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Ingår i: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. - : John Wiley and Sons, Ltd. - 1862-6254. ; 4:05-Jun, s. 121-123
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Tidskriftsartikel (refereegranskat)abstract
- The synthesis of fiber-textured Ti2AlN(0001) films on SiO2 was characterized by in-situ and ex-situ X-ray scattering and Rutherford backscattering spectrometry. Ti2AlN was formed by solid-state reaction between sequentially deposited Ti and AlN layers. A deposition at 275 degrees C yields a Ti(0001) out-of-plane orientation which is maintained for the following AlN(0001)/Ti(0001) layers. Annealing to 600 degrees C yields AlN decomposition and diffusion of Al and N into Ti, with consecutive transformation into (TiAlN)-Al-3(111) and Ti2AlN(0001) plus AlN residuals. Despite preferred Ti2AlN(0001) out-of-plane orientation, the in-plane distribution is random, as expected from the self-organized pseudo-epitaxial growth.
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| 6. |
- Boström, T, et al.
(författare)
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Structure and morphology of nickel-alumina/silica solar thermal selective absorbers
- 2011
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Ingår i: Journal of Non-Crystalline Solids. - : Elsevier BV. - 0022-3093 .- 1873-4812. ; 357:5, s. 1370-1375
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Tidskriftsartikel (refereegranskat)abstract
- Nickel-alumina/silica thin film materials for the use in solar thermal absorbers have been investigated using Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Elastic Recoil Detection Analysis (ERDA). The TEM images revealed that all layers have a very small thickness variation and that the layers are completely homogenous. High resolution images showed 5-10 nm (poly) crystalline nickel nano-particles. ERDA showed that both the silica and alumina compositions contain more oxygen than 2:1 and 3:2 respectively. SEM showed the surface morphology and characteristics of the top silica anti-reflection layer. Hybrid-silica has showed to generate a smoother surface with less cracking compared to pure silica. The final curing temperature revealed to be of importance for the formation of cracks and the surface morphology.
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| 7. |
- Buchholt, Kristina, et al.
(författare)
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Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)
- 2012
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Ingår i: Journal of Crystal Growth. - : Elsevier. - 0022-0248 .- 1873-5002. ; 343:1, s. 133-137
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial Ti3GeC2 thin films were deposited on 4 degrees off-cut 4H-SiC(0001) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti3GeC2 films grow by lateral step-flow with {11 (2) over bar0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film.
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| 8. |
- Buchholt, Kristina, et al.
(författare)
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Step-flow growth of nanolaminate Ti3SiC2 epitaxial layers on 4H-SiC(0 0 0 1)
- 2011
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Ingår i: SCRIPTA MATERIALIA. - : Elsevier Science B.V., Amsterdam.. - 1359-6462. ; 64:12, s. 1141-1144
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial Ti3SiC2(0 0 0 1) films were deposited on 4 degrees off-cut 4H-SiC(0 0 0 1) wafers using magnetron sputtering. A lateral step-flow growth mechanism of the Ti3SiC2 was discovered by X-ray diffraction, elastic recoil detection analysis, atomic force microscopy and electron microscopy. Helium ion microscopy revealed contrast variations on the Ti3SiC2 terraces, suggesting a mixed Si and Ti(C) termination. Si-rich growth conditions results in Ti3SiC2 layers with pronounced {1 1 (2) over bar 0) faceting and off-oriented TiSi2 crystallites, while stoichiometric growth yields truncated {1 (1) over bar 0 0) terrace edges.
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| 9. |
- Chubarov, Mikhail, et al.
(författare)
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Growth of High Quality Epitaxial Rhombohedral Boron Nitride
- 2012
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Ingår i: Crystal Growth & Design. - : American Chemical Society. - 1528-7483 .- 1528-7505. ; 12:6, s. 3215-3220
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial growth of sp(2)-hybridized boron nitride (sp(2) BN) films on sapphire substrates is demonstrated in a hot wall chemical vapor deposition reactor at the temperature of 1500 degrees C, using triethyl boron and ammonia as precursors. The influence of the main important process parameters, temperature, N/B ratio, B/H-2 ratio, and carrier gas composition on the quality of the grown layers is investigated in detail. X-ray diffraction shows that epitaxial rhombohedral BN (r-BN) film can be deposited only in a narrow process parameter window; outside this window either turbostratic-BN or amorphous BN is favored if BN is formed. In addition, a thin strained AlN buffer layer is needed to support epitaxial growth of r-BN film on sapphire since only turbostratic BN is formed on sapphire substrate. The quality of the grown film is also affected by the B/H-2 ratio as seen from a change of the spacing between the basal planes as revealed by X-ray diffraction. Time-of-flight elastic recoil detection analysis shows an enhancement of the C and O impurities incorporation at lower growth temperatures. The gas phase chemistry for the deposition is discussed as well as the impact of the growth rate on the quality of the BN film.
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| 10. |
- Cubarovs, Mihails, et al.
(författare)
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Epitaxial CVD growthof sp2-hybridized boron nitrideusing aluminum nitride as buffer layer
- 2011
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Ingår i: Physica Status Solidi. Rapid Research Letters. - : Wiley-VCH Verlagsgesellschaft. - 1862-6254 .- 1862-6270. ; 5:10-11, s. 397-399
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial growth of sp2-hybridized boron nitride (BN) using chemical vapour deposition, with ammonia and triethyl boron as precursors, is enabled on sapphire by introducing an aluminium nitride (AlN) buffer layer. This buffer layer is formed by initial nitridation of the substrate. Epitaxial growth is verified by X-ray diffraction measurements in Bragg–Brentano configuration, pole figure measurements and transmission electron microscopy. The in-plane stretching vibration of sp2-hybridized BN is observed at 1366 cm–1 from Raman spectroscopy. Time-of-flight elastic recoil detection analysis confirms almost perfect stoichiometric BN with low concentration of carbon, oxygen and hydrogen contaminations.
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