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Träfflista för sökning "WFRF:(Gustavsson Johan 1974 ) "

Sökning: WFRF:(Gustavsson Johan 1974 )

  • Resultat 31-40 av 258
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31.
  • Dumitrescu, Mihail, et al. (författare)
  • 10 Gb/s uncooled dilute nitride optical transmitters operating at 1300 nm
  • 2009
  • Ingår i: 2009 Conference on Optical Fiber Communication, OFC 2009; San Diego, CA; United States; 22 March 2009 through 26 March 2009. - Washington, D.C. : OSA. - 9781557528650
  • Konferensbidrag (refereegranskat)abstract
    • Dilute-nitride lasers with record performances have been used to build uncooled transceivers and failure free 10 Gb/s optical transmission was achieved over 815 m of multimode Corning InfiniCor fiber under the LRM standard.
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32.
  • Gierl, Christian, et al. (författare)
  • Tuneable VCSEL aiming for the application in interconnects and short haul systems
  • 2011
  • Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819484963 ; 7959
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • Widely tunable vertical cavity surface emitting lasers (VCSEL) are of high interest for optical communications, gas spectroscopy and fiber-Bragg-grating measurements. In this paper we present tunable VCSEL operating at wavelength around 850 nm and 1550 nm with tuning ranges up to 20 nm and 76 nm respectively. The first versions of VCSEL operating at 1550 nm with 76 nm tuning range and an output power of 1.3mW were not designed for high speed modulation, but for applications where only stable continious tuning is essential (e.g. gas sensing). The next step was the design of non tunable VCSEL showing high speed modulation frequencies of 10 GHz with side mode supression ratios beyond 50 dB. The latest version of these devices show record output powers of 6.7mW at 20 °C and 3mW at 80 °C. The emphasis of our present and future work lies on the combination of both technologies. The tunable VCSEL operating in the 850 nm-region reaches a modulation bandwidth of 5.5GHz with an output power of 0.8mW.
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33.
  • Goyvaerts, Jeroen, et al. (författare)
  • Enabling VCSEL-on-silicon nitride photonic integrated circuits with micro-transfer-printing
  • 2021
  • Ingår i: Optica. - 2334-2536. ; 8:12, s. 1573-1580
  • Tidskriftsartikel (refereegranskat)abstract
    • New wavelength domains have become accessible for photonic integrated circuits (PICs) with the development of silicon nitride PICs. In particular, the visible and near-infrared wavelength range is of interest for a range of sensing and communication applications. The integration of energy-efficient III-V lasers, such as vertical-cavity surface-emitting lasers (VCSELs), is important for expanding the application portfolio of such PICs. However, most of the demonstrated integration approaches are not easily scalable towards low-cost and large-volume production. In this work, we demonstrate the micro-transfer-printing of bottom-emitting VCSELs on silicon nitride PICs as a path to achieve this. The demonstrated 850 nm lasers show waveguide-coupled powers exceeding 100 mu W, with sub-mA lasing thresholds and mW-level power consumption. A single-mode laser with a side-mode suppression ratio over 45 dB and a tuning range of 5 nm is demonstrated. Combining micro-transfer-printing integration with the extended-cavity VCSEL design developed in this work provides the silicon nitride PIC industry with a great tool to integrate energy-efficient VCSELs onto silicon nitride PICs.
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34.
  • Grabowski, Alexander, 1993, et al. (författare)
  • Impact of Carrier Transport and Capture on VCSEL Dynamics
  • 2023
  • Ingår i: IEEE Journal of Quantum Electronics. - 0018-9197 .- 1558-1713. ; 59:1, s. 1-6
  • Tidskriftsartikel (refereegranskat)abstract
    • Using a vertical-cavity surface-emitting laser (VCSEL) equivalent circuit model based on two carrier rate equations to include effects of carrier dynamics, we study the impact of carrier transport and capture on the small- and large-signal modulation response of high-speed VCSELs. The model also accounts for parasitics, current-induced self-heating, and gain compression. A variation of the effective capture time from 1 to 15 ps is found to have a large impact on the small-signal modulation response, with the 3 dB bandwidth decreasing from 40 to 15 GHz and the response transitioning from under-damped to over-damped. This is primarily due to the increasing low frequency parasitic-like roll-off with increasing effective capture time. A significant effect on the optical waveforms produced by the VCSEL under 56 Gbit/s on-off keying (OOK) non-return-to-zero (NRZ) and pulse-amplitude modulation 4 (PAM4) modulation is observed, with a short effective capture time leading to horizontal eye closure caused by timing jitter (TJ) and intersymbol interference (ISI) and a long effective capture time leading to vertical eye closure caused by long rise- and fall-times. However, for high modulation speed, a short effective capture time is needed and the photon lifetime should be set for clear eye opening. We also show the impact of the effective capture time on the output power vs current characteristics and map the dependence of internal temperature, carrier densities, carrier escape and leakage rates, and spontaneous recombination rates on current for different effective capture times.
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35.
  • Grabowski, Alexander, 1993, et al. (författare)
  • Large-Signal Circuit Model for Datacom VCSELs
  • 2018
  • Ingår i: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. ; 2018-September, s. 193-194
  • Konferensbidrag (refereegranskat)abstract
    • We present a physics-based equivalent-circuit model for datacom VCSELs, with ambient temperature and self-heating effects accounted for. This circuit model is unique in accounting for carrier capture dynamics between active region continuum and quantum well bound states. OOK/PAM4 simulations are demonstrated at 25°C and 85°C.
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36.
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37.
  • Grabowski, Alexander, 1993, et al. (författare)
  • Large-Signal Equivalent Circuit for Datacom VCSELs
  • 2021
  • Ingår i: Journal of Lightwave Technology. - 0733-8724 .- 1558-2213. ; 39:10, s. 3225-3236
  • Tidskriftsartikel (refereegranskat)abstract
    • Increasing the baud rate in optical interconnects (OIs) will require the use of more sophisticated driver and receiver electronics. This will help overcome the stagnated bandwidth of the Vertical-Cavity Surface-Emitting Laser (VCSEL) and the pin-photodetector. Next generation OIs operating at single lane rates of 50+ Gbaud will therefore require careful co-optimization of the electronics and the optoelectronics. To facilitate this work there is a need of an accurate equivalent circuit for the optoelectronic components, functioning over a broad drive current and ambient temperature range. The VCSEL is the most important and complex to model due to its non-linear behavior and strongly varying characteristics with drive current and ambient temperature. For this purpose, a large-signal equivalent circuit dedicated for high-speed datacom VCSELs has been developed and is presented here. The distributed electrical parasitics in the device layout are carefully considered, the intrinsic speed limitation from carrier transport effects in the Separate-Confinement-Heterostructure (SCH) and the carrier-photon interaction in the Quantum Wells (QWs) are included, and self-heating effects in the device are monitored. The circuit is purposely based on physical instead of empirical models so that it can provide usable feedback to VCSEL designers. For circuit demonstration, it is implemented in Keysight's Advanced Design System (ADS) software and thereafter applied to replicate the performance of a state-of-the-art 28-GHz-bandwidth VCSEL at different temperatures and drive currents. Comparison is made between simulated and measured steady-state characteristics, small-signal behavior, and large-signal response under 28 Gbaud On-Off-Keying (OOK) and Pulse-Amplitude-Modulation 4 (PAM4) modulation, showing good agreement.
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38.
  • Grabowski, Alexander, 1993, et al. (författare)
  • Large-Signal Equivalent Circuit for Datacom VCSELs – Including Intensity Noise
  • 2022
  • Ingår i: Journal of Lightwave Technology. - 0733-8724 .- 1558-2213. ; , s. 1-9
  • Tidskriftsartikel (refereegranskat)abstract
    • Optical interconnects (OIs) continue to require more and more sophisticated driver and receiver electronics as higher baud rates are pushed in datacom, mainly due to the bandwidth stagnation of the optoelectronic components such as the vertical-cavity surface-emitting laser (VCSEL) in the transmitter as well as the photodetector (PD) in the receiver. Another important focus is maintaining high energy efficiency for the OIs. For both cases, a reliable equivalent circuit model for high-speed VCSELs is required for link optimization. This work is an extension of our previously presented large-signal VCSEL equivalent circuit model, where noise is added to the physical processes that the VCSEL model is based on. Thus, a new step is taken in the strive of developing an even more accurate physics-based large-signal VCSEL equivalent circuit model for datacom applications. Following a detailed description of the VCSEL noise modelling, a presentation is given on simulated results of VCSEL relative intensity noise (RIN) spectrum and eye diagrams under 28 Gbaud on-off keying (OOK) and pulse-amplitude 4 (PAM4) modulation, and that are compared with corresponding measurement results. Good agreement is found over a wide range of VCSEL driving conditions and temperatures. A 28-GHz-bandwidth VCSEL is applied for the demonstration, and the presented noise extended VCSEL equivalent circuit model was implemented in Verilog-A, and the simulations were performed using Cadence Spectre.
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  • Resultat 31-40 av 258
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Gustavsson, Johan, 1 ... (254)
Larsson, Anders, 195 ... (199)
Haglund, Åsa, 1976 (117)
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Baets, Roel G. (22)
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Wei, Yongqiang, 1975 (19)
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