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- Monemar, Bo, 1942-, et al.
(författare)
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The 3.466 eV Bound Exciton in GaN
- 2001
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Ingår i: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 228:2, s. 489-492
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Tidskriftsartikel (refereegranskat)abstract
- We discuss the available optical data for the 3.466 eV bound exciton in GaN, which has been a controversial issue in the recent literature. We conclude that the experimental results are only consistent with the identification as an exciton bound at a neutral acceptor with a spin-like bound hole. The chemical identity is still not clear.
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2. |
- Paskov, Plamen, 1959-, et al.
(författare)
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Internal structure of free excitons in GaN
- 2001
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Ingår i: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 228:2, s. 467-470
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Tidskriftsartikel (refereegranskat)abstract
- Polarized photoluminescence is used to study the fine structure of free excitons in thick GaN layers grown on differently oriented sapphire substrates. The singlet-triplet splitting of the A exciton is measured and the exchange interaction constant in GaN is determined. For the samples grown on the a-plane sapphire, splitting of the A and B excitons induced by the uniaxial in-plane stress is also observed.
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