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Sökning: LAR1:gu > Tidskriftsartikel > Campbell Eleanor E B 1960

  • Resultat 81-89 av 89
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81.
  • Wang, Teng, 1983, et al. (författare)
  • Through silicon vias filled with planarized carbon nanotube bundles
  • 2009
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 20:48
  • Tidskriftsartikel (refereegranskat)abstract
    • The feasibility of using carbon nanotube (CNT) bundles as the fillers of through silicon vias (TSVs) has been demonstrated. CNT bundles are synthesized directly inside TSVs by thermal chemical vapor deposition (TCVD). The growth of CNTs in vias is found to be highly dependent on the geometric dimensions and arrangement patterns of the vias at atmospheric pressure. The CNT-Si structure is planarized by a combined lapping and polishing process to achieve both a high removal rate and a fine surface finish. Electrical tests of the CNT TSVs have been performed and their electrical resistance was found to be in the few hundred ohms range. The reasons for the high electrical resistance have been discussed and possible methods to decrease the electrical resistance have been proposed.
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82.
  • Yao, Yiming, 1957, et al. (författare)
  • Cross sectional TEM investigation of Ni-catalysed carbon nanotube films grown by plasma enhanced CVD
  • 2005
  • Ingår i: Journal of Microscopy. - : Wiley. - 0022-2720 .- 1365-2818. ; 219, s. 69-75
  • Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
    • Nickel-catalysed multiwall carbon nanotubes synthesized by plasma-enhanced chemical vapour deposition on a silicon substrate with acetylene and ammonia at 700 °C have been characterized by high-resolution and analytical transmission electron microscopy. The nucleation of the carbon nanotubes occurs as a consequence of the carburization and dusting of supported preformed nickel- and silicon-rich particles. This process yields disintegrated silicon-containing nickel particles dispersed in dome-shaped carbon islands adherent to the substrate. The particles act as catalysts for tube growth, resulting in aligned multiwall carbon nanotubes with a bamboo-like structure anchored to the dome-shaped carbon islands. The bottom part of the carbon islands contains bundles of graphene sheets orientated parallel to the substrate. The nanotubes are capped with fcc nickel particles containing dissolved silicon. Most of these particles have a conical shape orientated with a <110> direction along the tube growth axis, and with {110} and {111} planes as exposed faces.
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83.
  • Yao, Yiming, 1957, et al. (författare)
  • Nucleation and aligned growth of multi-wall carbon nanotube films during thermal CVD
  • 2007
  • Ingår i: Carbon. - : Elsevier BV. - 0008-6223. ; 45, s. 2065-2071
  • Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
    • The development during early growth of a multi-wall carbon nanotube film by thermal CVD with acetylene (C2H2) and hydrogen at 750 °C has been characterized in detail by cross-section transmission electron microscopy. The studies provide information on the nanotube growth mechanisms and the complex catalyst transformations that are essential for the onset of different growth stages. An initial random growth catalysed by supported particles is followed by aerosol growth of aligned tubes. This results in a two-layered film structure, where a film of aligned nanotubes is lifting up an initially formed nanotube network from the substrate.
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84.
  • Yao, Yiming, 1957, et al. (författare)
  • Synthesis of carbon nanotube films by thermal CVD in the presence of supported catalyst particles. Part II: the nanotube film
  • 2004
  • Ingår i: Journal of Materials Science: Materials in Electronics. ; 15:9, s. 583-594
  • Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
    • Carbon nanotube films have been grown at 750° and 900 °C by thermal chemical vapor deposition (CVD) with acetylene (C2H2) and hydrogen on silicon (0 0 2) wafers supporting preformed (Fe,Si)3O4 particles. The reduction of the (Fe,Si)3O4 particles during CVD at 750 °C was accompanied by a disintegration leading to the formation of a high density of smaller (predominantly 5–15 nm) iron silicide (α1-Fe2Si) particles that catalyzed the growth of a dense and aligned multi-wall carbon nanotube film. The tubes did not contain any inclusions apart from the catalytic particles present in the bottom part of the film, and it was concluded that the nanotubes grew via a “base-growth” mechanism. CVD at 900 °C resulted in a random growth of predominantly multi-wall carbon nanotubes. The film contained an increased number of amorphous carbon, or graphite, clusters containing particles that had been carbonized, the larger ones to cementite, θ-Fe3C. Nanotubes were observed to grow from some of these clusters. Multi-wall carbon nanotube tips contained after CVD at 900 °C encapsulated θ-Fe3C, or in a few cases α- or γ-Fe, particles.
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85.
  • Yu, H.Y., et al. (författare)
  • Current enhancement with alternating gate voltage in the Coulomb blockade regime of a single wall carbon nanotube
  • 2004
  • Ingår i: Applied Physics A. - : Springer Science and Business Media LLC. - 0947-8396 .- 1432-0630. ; 79, s. 1613-1615
  • Tidskriftsartikel (refereegranskat)abstract
    • We investigated the current–voltage characteristics of a carbon nanotube in a single electron transistor structure with alternating gate voltage. A continuous current enhancement effect with increasing frequency of the applied gate voltage up to 13 MHz is reported. Assuming that I=nef, more than 1000 electrons are driven to flow across the source–drain channel at VDS=100 mV, 13 MHz of gate voltage (Vp-p=2 V) and T=1.8 K. The continuous current enhancement is explained by the broadening effect of the discrete energy levels of the finite-length carbon nanotube.
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86.
  • Zhang, Zhibin, et al. (författare)
  • All-around contact for carbon nanotube field-effect transistors made by ac dielectrophoresis
  • 2006
  • Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 24:1, s. 131-135
  • Tidskriftsartikel (refereegranskat)abstract
    • Carbon nanotube field-effect transistors (CNFETs) are fabricated by depositing one bundle of sinole-walled carbon nanotubes (SWNTs) per device between a pair of predefined Pd electrodes using ac dielectrophoresis. By repeating the process for the formation of the Pd electrodes after the bundle deposition, all-around Pd contacts are made to the SWNT bundles. After the formation of all-around contact, the CNFETs with only semiconducting SWNTs in the bundles retain a strong a 106,ate modulation with a high ratio of on to off current I-on/I-off For the CNFETs with at least one metallic SWNT in the bundles, their gate modulation disappears and carbon nanotube resistors (CNRs) are obtained. The on current I-on of CNFETs is found to be sensitive to the process for the formation of all-around contact. In contrast, the two-probe resistance of CNRs is consistently reduced after the all-around contacts. The electrical measurements also indicate the presence of an interlayer residing at the SWNT/Pd contacts.
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87.
  • Zhang, Zhibin, et al. (författare)
  • current dielectrophoresis of carbon nanotubes
  • 2005
  • Ingår i: J. Appl. Phys.. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 98
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on the deposition of individual semiconducting single-walled carbon nanotubes (s-SWNTs), suspended in an aqueous solution of sodium dodecylsulfate (SDS), onto predefined electrodes using alternating current dielectrophoresis up to 100 MHz. The successful deposition is attributed to the formation of an ionic double layer encapsulating the nanotubes by surface adsorption of the SDS molecules. The nanotube-micella complex formed has a greater polarization than that of the s-SWNTs, which is theoretically shown to be frequency dependent up to 10 GHz. Carbon nanotube field-effect transistors showing large on/off-state current ratios of 10^8 were demonstrated.
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88.
  • Zhang, Zhibin, et al. (författare)
  • Dielectrophoretic behavior of ionic surfactant-solubilized carbon nanotubes
  • 2006
  • Ingår i: Chemical Physics Letters. - : Elsevier BV. - 0009-2614 .- 1873-4448. ; 421:1-3, s. 11-15
  • Tidskriftsartikel (refereegranskat)abstract
    • The deposition of carbon nanotubes (CNTs), suspended in aqueous sodium dodecylbenzene sulfonate (SDBS) solution, to predefined microelectrodes using alternating current dielectrophoresis is found to strongly depend on the frequency and SDBS concentration. The deposition rate of CNTs increases with increasing frequency. At high SDBS concentrations, the alignment of CNTs between electrode pairs is only achievable at high frequencies above 1 MHz. The morphology of the deposited CNTs relative to the electrodes varies with the SDBS concentration. The experimental observations are discussed by treating the CNTs as a rigid rod.
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89.
  • Zhang, Zhibin, et al. (författare)
  • Reversible surface functionalisation of carbon nanotubes for fabrication of field effect transistors
  • 2005
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 87
  • Tidskriftsartikel (refereegranskat)abstract
    • Evidence of the adsorption of sodium dodecyl sulfate (SDS) residuals on single-walled carbon nanotubes (SWNTs) is shown using x-ray photoelectron spectroscopy. The adsorption of SDS on semiconducting SWNTs (s-SWNTs) is believed to result in deposition and alignment of s-SWNTs between predefined electrode pairs using ac dielectrophoresis. However, the presence of SDS on SWNTs degrades electrical properties of the fabricated devices. Attempts at surface cleaning, aimed at removal of the SDS residuals and formation of an improved contact between the SWNTs and the metal, are described.
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  • Resultat 81-89 av 89
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refereegranskat (83)
övrigt vetenskapligt/konstnärligt (6)
Författare/redaktör
Nerushev, Oleg, 1960 (17)
Hansen, Klavs, 1958 (16)
Lee, SangWook (13)
Park, YungWoo (12)
Svensson, Johannes, ... (12)
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Popok, Vladimir, 196 ... (11)
Hertel, Ingolf, 1941 (9)
Gromov, Andrei, 1959 (9)
Sveningsson, Martin, ... (8)
Hedén, Martin, 1976 (8)
Bulgakov, Alexander, ... (8)
Bulgakova, Nadya, 19 ... (8)
Dittmer, Staffan, 19 ... (8)
Lassesson, Andreas, ... (6)
Kjellberg, Mikael, 1 ... (6)
Falk, Lena, 1956 (6)
Kabir, Mohammad, 197 ... (5)
Stoian, Razvan (5)
Rosenfeld, Arkadi (5)
Shinohara, H (5)
Taninaka, A. (5)
Kim, B. (4)
Lundgren, Per, 1968 (4)
Mehlig, Kirsten, 196 ... (4)
Bengtsson, Stefan, 1 ... (4)
Zhang, Zhibin (4)
Nerushev, O. A. (4)
Yao, Yiming, 1957 (4)
Lee, S. -H (3)
Roth, S. (3)
Zhang, Shi-Li (3)
Enoksson, Peter, 195 ... (3)
Jonsson, Martin (3)
Nordlund, K. (3)
Kinaret, Jari, 1962 (3)
Boyle, Mark (3)
Olofsson, Niklas, 19 ... (3)
Schulz, C.P. (3)
Liu, Johan, 1960 (2)
Kuzmin, Leonid, 1946 (2)
Tarasov, Mikhail, 19 ... (2)
Isacsson, Andreas, 1 ... (2)
Ek Weis, J. (2)
Eriksson, Anders, 19 ... (2)
Tarakanov, Yury, 198 ... (2)
Marine, Wladimir (2)
Wang, Teng, 1983 (2)
Park, Y. W. (2)
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