| 121. |
- Piscator, Johan, 1977, et al.
(författare)
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The conductance method in a bottom-up approach applied on hafnium oxide/silicon interfaces
- 2009
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Ingår i: Applied Physics Letters. - 0003-6951 .- 1077-3118. ; 94:21, s. 213507-
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Tidskriftsartikel (refereegranskat)abstract
- Starting from basic statistical properties of interface states, we demonstrate the influence of energy dependent interface state distributions and thermal emission rates including their capture cross sections on measured differential conductance data for Al/HfO2/SiOx/Si structures. Theoretical plots calculated this way reproduce experimental conductance data without correction for lateral surface potential variations. Close to the silicon conduction band edge, we find an energy dependence of the capture cross sections revealing the existence of electron states with capture processes deviating from the multiphonon mechanisms found for the deeper lying states at interfaces between high-k dielectrics and silicon.
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| 122. |
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| 123. |
- Przewlocki, H. M., et al.
(författare)
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Photoemission yield and the electron escape depth determination in metal-oxide-semiconductor structures on N+-type and P+-type silicon substrates
- 2012
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 111:11, s. 114510-
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Tidskriftsartikel (refereegranskat)abstract
- This article gives a quantitative analysis of electron photoemission yield from N+-type and P+-type substrates of MOS structures. Based on this analysis, a method is presented to estimate both the scattering length, l, of electrons in the image force potential well and of photoelectron escape depth, x(esc), from the semiconductor substrate. This method was used to estimate the scattering length and the escape depth from the substrates of Al-SiO2-Si (N+-type and P+-type) structures. It was found that for N+-type substrate structures the scattering in the image force potential well has a dominating influence on the photoemission yield while for P+-type substrate structures both the scattering in the image force potential well and the photoemission from the subsurface regions of the photoemitter play important roles. It was found that the scattering length in the image force potential well was equal to l = 6.7-6.9 nm for structures on both N+ and P+ substrates, produced in the same processing conditions. For structures on P+ substrates, the escape depth was found to be equal to x(esc) = 8-9 nm. The scattering length, l, determined in this study is considerably larger than the one reported previously (l = 3.4 nm) for similar MOS structures. The escape depth x(esc) determined in this study is also considerably larger than the escape depth determined previously (x(esc) = 1.2-2.5 nm) for the external photoemission from uncovered silicon surfaces into vacuum.
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| 124. |
- Raeissi, Bahman, 1979, et al.
(författare)
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Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currents
- 2011
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Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 1945-7111 .- 0013-4651. ; 158:3, s. G63-G70
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Tidskriftsartikel (refereegranskat)abstract
- Thermally stimulated currents (TSCs) have been measured to investigate electron traps in HfO2 prepared by reactive sputtering on silicon. Broken planes of the silicon crystal, which may contribute to the occurrence of interface states, were identified between the silicon and SiOx interlayer by transmission electron microscopy (TEM). A second domain was found between SiOx and HfO2 constituting a gradual transition region between the two oxides. This interface region was found to be a source of unstable charge traps where captured electrons interact with the silicon energy states through a combined tunneling and thermal process.
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| 125. |
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| 126. |
- Raeissi, Bahman, 1979, et al.
(författare)
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Electron traps at HfO2/SiOx interfaces
- 2008
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Ingår i: Proceeding of 38th European Solid-State Device Research Conference (ESSDERC 2008), Edinburgh, Scotland, UK. - 1930-8876. - 9781424423637 ; , s. 130-133
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Konferensbidrag (refereegranskat)abstract
- Electron traps in HfO2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the “interlayer” of SiOx commonly present in high-k/silicon stacks. On the inner side, between SiOx and silicon, we find an irregular silicon crystal which we interpret as a source for interface states. At the SiOx/HfO2 interface, we find a high concentration of unstable traps with a strong influence on the electric field distribution in the gate stack.
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| 127. |
- Raeissi, Bahman, 1979, et al.
(författare)
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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
- 2007
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Ingår i: ESSDERC 2007. - 9781424411238 ; , s. 283-286
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Konferensbidrag (refereegranskat)abstract
- Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd(2)O(3) prepared by MBE and ALD, and for HfO(2) prepared by reactive sputtering, by measuring the frequency dependence of MOS capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.
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| 128. |
- Raeissi, Bahman, 1979, et al.
(författare)
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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
- 2008
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 52:9, s. 1274-1279
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Tidskriftsartikel (refereegranskat)abstract
- Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 preparedby molecular beam epitaxy (MBE) and atomic layer deposition (ALD), and for HfO2 prepared byreactive sputtering, by measuring the frequency dependence of Metal Oxide Semiconductor (MOS) capacitance.The capture cross sections are found to be thermally activated and to increase steeply with theenergy depth of the interface electron states. The methodology adopted is considered useful for increasingthe understanding of high-k-oxide/silicon interfaces.
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| 129. |
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| 130. |
- Raeissi, Bahman, 1979, et al.
(författare)
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Multiparameter Admittance Spectroscopy as a Diagnostic Tool for Interface States at Oxide/Semiconductor Interfaces
- 2010
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Ingår i: IEEE Transactions on Electron Devices. - 1557-9646 .- 0018-9383. ; 57:7, s. 1702-1705
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Tidskriftsartikel (refereegranskat)abstract
- Multiparameter admittance spectroscopy (MPAS) measurements have been performed on Al/HfO2/SiOx/Si structures before and after post metallization annealing (PMA). Contour plots of conductance data as a function of the logarithm of inverted signal frequency and applied voltage as obtained by MPAS are compared with standard capacitance versus voltage (C–V) data demonstrating the advantage of MPAS as a diagnostic tool. MPAS reveals more detailed properties of oxide/semiconductor interface states and renders measured data for better perceptiveness.
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