| 21. |
- Engström, Olof, 1943, et al.
(författare)
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A generalised methodology for oxide leakage current metric
- 2008
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Ingår i: Proceeding of 9th European Workshop on Ultimate Integration of Silicon (ULIS), Udine, Italy. - 9781424417308 ; , s. 167-
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Konferensbidrag (refereegranskat)abstract
- From calculations of semiconductor interfacecharge, oxide voltage and tunneling currents for MOSsystems with equivalent oxide thickness (EOT) in therange of 1 nm, rules are suggested for making itpossible to compare leakage quality of different oxideswith an accuracy of a factor 2 – 3 if the EOT is known.The standard procedure suggested gives considerablybetter accuracy than the commonly used method todetermine leakage at VFB+1V for n-type and VFB-1V forp-type substrates.
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| 22. |
- Engström, Olof, 1943
(författare)
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A model for internal photoemission at high-k oxide/silicon energy barriers
- 2012
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 112:6
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Tidskriftsartikel (refereegranskat)abstract
- A model has been developed to describe the emission of electrons from silicon across the oxide energy barrier of metal-oxide-silicon structures. An optical absorption coefficient, exclusively describing the transmission of electrons which are emitted across the barrier, is split from the corresponding experimental quantity for the entire absorption range. This makes it possible to approximate the photo yield in terms of absorption coefficients and density of states without need for explicitly calculated matrix elements of optical transitions. Using this method, theoretical emission yield curves are found in good agreement with measured data. An important conclusion from this work is that values of oxide energy barrier heights should be extracted from different features of the yield data than most often done in the literature. This replaces a commonly used practice for determining the barrier heights, which is shown to be based on optical bulk properties of the silicon crystal.
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| 23. |
- Engström, Olof, 1943, et al.
(författare)
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Analysis of electron capture at oxide traps by electric field injection
- 2013
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 102:21
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Tidskriftsartikel (refereegranskat)abstract
- Electron injection into oxide traps of metal/high-k oxide/interlayer/silicon structures is investigated by modeling. We demonstrate the influence on flat-band voltage by the sharpness of the interlayer/silicon interface and by the properties of traps in the oxide. Since charge carrier injection in this kind of structures may take place by two different processes simultaneously, excluding one or the other in the interpretation of data may lead to considerable erroneous results in extracted values of capture cross sections.
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| 24. |
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| 25. |
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| 26. |
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| 27. |
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| 28. |
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| 29. |
- Engström, Olof, 1943
(författare)
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Compensation effects at electron traps in semiconductors
- 2013
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Ingår i: Monatshefte für Chemie. - : Springer Science and Business Media LLC. - 0026-9247 .- 1434-4475. ; 144:1, s. 73-82
-
Tidskriftsartikel (refereegranskat)abstract
- The basic qualities for fulfilling the Meyer-Neldel rule (MNR) for thermal electron emission from semiconductor traps are investigated. A trap model including vibronic properties is used with varying entropy arising from the change in elasticity of the ionic part of the trap potential when an electron transition takes place. This gives rise to a system where the compensation effect originates from the increasing entropy change as a function of the enthalpy supply needed for the transition process in concord with Yelon-Movaghar theory. The entropy increase connects to a decrease in the activation energy for electron capture, which amplifies the compensation effect for MNR manifestation. By comparing with experimental data, the result achieved from the model clarifies the experimental observation of class partitioning for centers in GaAs, obeying the MNR. Furthermore, it is demonstrated that traps at metal-oxide-silicon interfaces, with the same properties as bulk traps following the MNR, give rise to capture cross-sections steeply increasing with the Gibbs free energy involved in carrier emission, as found by experiment.
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| 30. |
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