| 41. |
- Jacobsson, Henrik, et al.
(författare)
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High-resolution XRD evaluation of thick 4H-SiC epitaxial layers
- 2001
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Ingår i: Materials Science Forum, Vols. 353-356. ; , s. 291-294
-
Konferensbidrag (refereegranskat)abstract
- 4H-SiC commercial wafers and sublimation grown epitaxial layers with a thickness of 100 mum have been studied concerning crystalline structure. The substrate wafers and the epitaxial layers have been separately investigated by high-resolution x-ray diffraction (HRXRD) and synchrotron white beam x-ray topography (SWBXT). The results show that the structural quality was improved in the epitaxial layers in the < 11 (2) over bar0 > and <(1) over bar 100 > directions, concerning domain distribution, lattice plane misorientation, mosaicity, and strain? compared with the substrates. Misoriented domains have merged together to form larger domains while the tilt between the domains was reduced, which resulted in non-splitting in diffraction curves. It is also clear that if the misorientation in the substrate gets too large, we can only see a slight decrease in the misorientation in the layer. At some positions on the substrates there were block structure (mosaicity). omega -rocking curves from epilayers at the same position showed smaller full width at half-maximum (FWHM) values and more uniform and narrow peaks. Curvature was almost the same in grown epilayers compared with the substrates. The shape of the grown epitaxial layers nas concave similarly to the substrates.
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| 42. |
- Jian, Jingxin, et al.
(författare)
-
A nanostructured NiO/cubic SiC p-n heterojunction photoanode for enhanced solar water splitting
- 2019
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Ingår i: Journal of Materials Chemistry A. - : ROYAL SOC CHEMISTRY. - 2050-7488 .- 2050-7496. ; 7:9, s. 4721-4728
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Tidskriftsartikel (refereegranskat)abstract
- Photoelectrochemical (PEC) water-splitting offers a promising method to convert the intermittent solar energy into renewable and storable chemical energy. However, the most studied semiconductors generally exhibit a poor PEC performance including low photocurrent, small photovoltage, and/or large onset potential. In this work, we demonstrate a significant enhancement of photovoltage and photocurrent together with a substantial decrease of onset potential by introducing electrocatalytic and p-type NiO nanoclusters on an n-type cubic silicon carbide (3C-SiC) photoanode. Under AM1.5G 100 mW cm(-2) illumination, the NiO-coated 3C-SiC photoanode exhibits a photocurrent density of 1.01 mA cm(-2) at 0.55 V versus reversible hydrogen electrode (V-RHE), a very low onset potential of 0.20 V-RHE and a high fill factor of 57% for PEC water splitting. Moreover, the 3C-SiC/NiO photoanode shows a high photovoltage of 1.0 V, which is the highest value among reported photovoltages. The faradaic efficiency measurements demonstrate that NiO also protects the 3C-SiC surface against photo-corrosion. The impedance measurements evidence that the 3C-SiC/NiO photoanode facilitates the charge transfer for water oxidation. The valence-band position measurements confirm the formation of the 3C-SiC/NiO p-n heterojunction, which promotes the separation of the photogenerated carriers and reduces carrier recombination, thus resulting in enhanced solar water-splitting.
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| 43. |
- Jian, Jingxin, et al.
(författare)
-
Cubic SiC Photoanode Coupling with Ni:FeOOH Oxygen-Evolution Cocatalyst for Sustainable Photoelectrochemical Water Oxidation
- 2020
-
Ingår i: Solar RRL. - : WILEY-V C H VERLAG GMBH. - 2367-198X. ; 4:1
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Tidskriftsartikel (refereegranskat)abstract
- As an efficient water oxidation cocatalyst, the Earth-abundant nickel-iron oxyhydroxide (Ni:FeOOH) is introduced to coat on the cubic silicon carbide (3C-SiC) photoanode surface for improving the photoelectrochemical (PEC) water oxidation performance. The FeOOH is prepared on the 3C-SiC photoanode surface by hydrothermal deposition, followed by a photoassisted electrodeposition of NiOOH. It is shown that the Ni:FeOOH layer is composed of the beta-FeOOH nanorods with a conformal coating of the amorphous NiOOH. Under AM1.5G 100 mW cm(-2) illumination, the 3C-SiC/Ni:FeOOH photoanode exhibits a very low onset potential of 0.2 V versus reversible hydrogen electrode (V-RHE) and a high photocurrent density of 1.15 mA cm(-2) at 1.23 V-RHE, distinctly outperforming the 3C-SiC and the 3C-SiC/FeOOH counterparts. Open-circuit potential and impedance spectroscopy results demonstrate that the nanostructured Ni:FeOOH layer on the 3C-SiC surface increases the photovoltage and promotes the charge transfer toward the electrolyte, thus significantly improving the PEC water-splitting performance. These results provide new insights for the development of photoanodes toward efficient solar-fuel generation.
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| 44. |
- Jian, Jingxin, et al.
(författare)
-
Nanoporous Cubic Silicon Carbide Photoanodes for Enhanced Solar Water Splitting
- 2021
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Ingår i: ACS Nano. - : American Chemical Society (ACS). - 1936-0851 .- 1936-086X. ; 15:3, s. 5502-5512
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Tidskriftsartikel (refereegranskat)abstract
- Cubic silicon carbide (3C-SiC) is a promising photoelectrode material for solar water splitting due to its relatively small band gap (2.36 eV) and its ideal energy band positions that straddle the water redox potentials. However, despite various coupled oxygen-evolution-reaction (OER) cocatalysts, it commonly exhibits a much smaller photocurrent (<similar to 1 mA cm(-2)) than the expected value (8 mA cm(-2)) from its band gap under AM1.5G 100 mW cm(-2) illumination. Here, we show that a short carrier diffusion length with respect to the large light penetration depth in 3C-SiC significantly limits the charge separation, thus resulting in a small photocurrent. To overcome this drawback, this work demonstrates a facile anodization method to fabricate nanoporous 3C-SiC photoanodes coupled with Ni:FeOOH cocatalyst that evidently improve the solar water splitting performance. The optimized nanoporous 3C-SiC shows a high photocurrent density of 2.30 mA cm(-2) at 1.23 V versus reversible hydrogen electrode (V-RHE) under AM1.5G 100 mW cm(-2) illumination, which is 3.3 times higher than that of its planar counterpart (0.69 mA cm(-2) at 1.23 V-RHE). We further demonstrate that the optimized nanoporous photoanode exhibits an enhanced light-harvesting efficiency (LHE) of over 93%, a high charge-separation efficiency (Phi(sep)) of 38%, and a high charge-injection efficiency (Phi(ox)) of 91% for water oxidation at 1.23 V-RHE, which are significantly outperforming those its planar counterpart (LHE = 78%, Phi(sep) = 28%, and Phi(ox) = 53% at 1.23 V-RHE). All of these properties of nanoporous 3C-SiC enable a synergetic enhancement of solar water splitting performance. This work also brings insights into the design of other indirect band gap semiconductors for solar energy conversion.
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| 45. |
- Jokubavicius, Valdas, et al.
(författare)
-
Effects of source material on epitaxial growth of fluorescent SiC
- 2012
-
Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 522, s. 7-10
-
Tidskriftsartikel (refereegranskat)abstract
- The growth of fluorescent SiC using Fast Sublimation Growth Process was demonstrated using different types of SiC source materials. These were prepared by (i) high-temperature hot pressing, (ii) chemical vapor deposition and (iii) physical vapor transport. The optimized growth rates of 50 μm/h, 170 μm/h and 200 μm/h were achieved using the three types of sources, respectively. The best results in respect to growth rates are obtained using higher density sources. Fluorescent SiC layers with mirror-like morphology, very good crystal quality and yellowish or warm white light photoluminescence at room temperature were grown using all three types of the source materials.
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| 46. |
- Jokubavicius, Valdas, et al.
(författare)
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Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates
- 2011
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Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 679-680, s. 103-106
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Tidskriftsartikel (refereegranskat)abstract
- Growth of 3C or 6H-SiC epilayers on low off-axis 6H-SiC substrates can be mastered by changing the size of the on axis plane formed by long terraces in the epilayer using geometrical control. The desired polytype can be selected in thick (~200 µm) layers of both 6H-SiC and 3C-SiC polytypes on substrates with off-orientation as low as 1.4 and 2 degrees. The resultant crystal quality of the 3C and the 6H-SiC epilayers, grown under the same process parameters, deteriorates when lowering the off-orientation of the substrate.
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| 47. |
- Jokubavicius, Valdas, et al.
(författare)
-
Growth optimization and applicability of thick on-axis SiC layers using sublimation epitaxy in vacuum
- 2016
-
Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 448, s. 51-57
-
Tidskriftsartikel (refereegranskat)abstract
- We demonstrate growth of thick SiC layers (100–200 µm) on nominally on-axis hexagonal substrates using sublimation epitaxy in vacuum (10−5 mbar) at temperatures varying from 1700 to 1975 °C with growth rates up to 270 µm/h and 70 µm/h for 6H- and 4H–SiC, respectively. The stability of hexagonal polytypes are related to process growth parameters and temperature profile which can be engineered using different thermal insulation materials and adjustment of the induction coil position with respect to the graphite crucible. We show that there exists a range of growth rates for which single-hexagonal polytype free of foreign polytype inclusions can be maintained. Further on, foreign polytypes like 3C–SiC can be stabilized by moving out of the process window. The applicability of on-axis growth is demonstrated by growing a 200 µm thick homoepitaxial 6H–SiC layer co-doped with nitrogen and boron in a range of 1018 cm−3 at a growth rate of about 270 µm/h. Such layers are of interest as a near UV to visible light converters in a monolithic white light emitting diode concept, where subsequent nitride-stack growth benefits from the on-axis orientation of the SiC layer.
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| 48. |
- Jokubavicius, Valdas, et al.
(författare)
-
Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates
- 2014
-
Ingår i: Crystal Growth & Design. - : American Chemical Society (ACS). - 1528-7483 .- 1528-7505. ; 14:12, s. 6514-6520
-
Tidskriftsartikel (refereegranskat)abstract
- We introduce a 3C-SiC growth concept on off-oriented 4H-SiC substrates using a sublimation epitaxial method. A growth model of 3C-SiC layer development via a controlled cubic polytype nucleation on in situ formed on-axis area followed by a lateral enlargement of 3C-SiC domains along the step-flow direction is outlined. Growth process stability and reproducibility of high crystalline quality material are demonstrated in a series of 3C-SiC samples with a thickness of about 1 mm. The average values of full width at half-maximum of ω rocking curves on these samples vary from 34 to 48 arcsec indicating high crystalline quality compared to values found in the literature. The low temperature photoluminescence measurements also confirm a high crystalline quality of 3C-SiC and indicate that the residual nitrogen concentration is about 1–2 × 1016 cm–3. Such a 3C-SiC growth concept may be applied to produce substrates for homoepitaxial 3C-SiC growth or seeds which could be explored in bulk growth of 3C-SiC.
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| 49. |
- Jokubavicius, Valdas, et al.
(författare)
-
Macrodefects in cubic silicon carbide crystals
- 2010
-
Ingår i: Materials Science Forum, Vols. 645-648. - : Transtec Publications; 1999. ; , s. 375-378
-
Konferensbidrag (refereegranskat)abstract
- Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 mu m/h with the thickness of the crystals from 190 to 230 mu m, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal growth. The highest concentration of macrodefects appears in the vicinity of the domain in samples grown under high temperature gradient: and fastest temperature ramp up. The formation of macrodefects was related to carbon deficiency which appear due to high Si/C ratio which is used to enable formation of the 3C-SiC polytype.
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| 50. |
- Jokubavicius, Valdas, et al.
(författare)
-
Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
- 2013
-
Ingår i: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 740-742, s. 19-22
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Tidskriftsartikel (refereegranskat)abstract
- Fluorescent silicon carbide was grown using the fast sublimation growth process on low off-axis 6H-SiC substrates. In this case, the morphology of the epilayer and the incorporation of dopants are influenced by the Si/C ratio. Differently converted tantalum foils were introduced into the growth cell in order to change vapor phase stochiometry during the growth. Fluorescent SiC grown using fresh and fully converted tantalum foils contained morphological instabilities leading to lower room temperature photoluminescence intensity while an improved morphology and optical stability was achieved with partly converted tantalum foil. This work reflects the importance of considering the use of Ta foil in sublimation epitaxy regarding the morphological and optical stability in fluorescent silicon carbide.
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