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Träfflista för sökning "WFRF:(Gustavsson Johan 1974 ) "

Sökning: WFRF:(Gustavsson Johan 1974 )

  • Resultat 61-70 av 258
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61.
  • Haglund, Erik, 1985, et al. (författare)
  • 30 GHz bandwidth 850 nm VCSEL with sub-100 fJ/bit energy dissipation at 25-50 Gbit/s
  • 2015
  • Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 51:14, s. 1096-1097
  • Tidskriftsartikel (refereegranskat)abstract
    • A high-speed and energy-efficient oxide-confined 850 nm vertical-cavity surface-emitting laser (VCSEL) for optical interconnects is presented. A record-high modulation bandwidth of 30 GHz is reached for a 3.5 mu m oxide aperture VCSEL, with 25 GHz bandwidth already at a bias current of 1.8 mA. The high bandwidth at low currents enables energy-efficient transmission with a dissipated heat energy in the VCSEL of
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62.
  • Haglund, Erik, 1985, et al. (författare)
  • 850 nm datacom VCSELs for higher-speed and longer-reach transmission
  • 2013
  • Ingår i: European VCSEL Day 2013.
  • Konferensbidrag (refereegranskat)abstract
    • The 850 nm GaAs-based VCSEL is already the dominating technology for transmitters in optical interconnects up to 100 m in datacenters, thanks to low-cost fabrication, excellent high-speed properties at low currents and the existence of high-speed OM4 multimode fiber optimized for this particular wavelength. Future datacenters will require faster and more energy-efficient VCSELs to increase the overall bandwidth and reduce the power consumption of the datacenter network. In addition, longer-reach interconnects exceeding 1 km will also be required as datacenters grow into large multi-building complexes.By optimizing the doping profiles of the DBRs to reduce resistance, using a short (½-λ) cavity to improve longitudinal optical confinement and optimizing the photon lifetime for optimal damping, we obtained a record-high small-signal modulation bandwidth of 28 GHz for a ~4 µm oxide aperture VCSEL. A 7 µm oxide aperture VCSEL (~27 GHz bandwidth) enabled error-free transmission (bit-error-rate 300 m), the large spectral width of VCSELs leads to severe signal degradation by fiber dispersion. We have investigated two methods of fabricating low-spectral width quasi-single mode VCSELs to mitigate this problem. By using a small oxide aperture of ~3 µm, error-free transmission was achieved at 22 Gbit/s over 1.1 km of OM4 fiber. An alternative approach is to use an integrated mode filter in the form of a shallow surface relief to reduce the spectral width of the VCSEL. The mode filter allows for the use of a larger oxide aperture and thereby enables a lower resistance and operation at a lower current density. A 5 µm oxide aperture VCSEL with a mode filter enabled error-free transmission at 25 Gbit/s over 500 m of OM4 fiber.
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63.
  • Haglund, Erik, 1985, et al. (författare)
  • Demonstration of post-growth wavelength control of VCSELs using high-contrast gratings
  • 2015
  • Ingår i: HP Laboratories Technical Report. ; 70
  • Tidskriftsartikel (refereegranskat)abstract
    • We demonstrate post-growth wavelength setting of vertical-cavity surface-emitting lasers (VCSELs) using high-contrast gratings (HCGs). By fabricating HCGs with different duty-cycle and period, the HCG reflection phase can be varied, in effect giving different optical cavity lengths for HCGVCSELs with different grating parameters. This enables fabrication of monolithic multi-wavelength HCG-VCSEL arrays for wavelength-division multiplexing (WDM). The GaAs HCG is suspended in air by selective removal of an InGaP sacrificial layer. Electrically injected 980-nm HCGVCSELs with sub-mA threshold currents indicate high reflectivity from the GaAs HCGs. Lasing over a wavelength span of 15 nm was achieved, enabling a 4-channel WDM array with 5 nm channel spacing. Device design, fabrication and experimental proof-of-concept are presented.
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64.
  • Haglund, Erik, 1985, et al. (författare)
  • Demonstration of post-growth wavelength setting of VCSELs using high-contrast gratings
  • 2016
  • Ingår i: Optics Express. - : The Optical Society. - 1094-4087 .- 1094-4087. ; 24:3, s. 1999-2005
  • Tidskriftsartikel (refereegranskat)abstract
    • We demonstrate, for the first time, post-growth wavelength setting of electrically-injected vertical-cavity surface-emitting lasers (VCSELs) by using high-contrast gratings (HCGs) with different grating parameters. By fabricating HCGs with different duty cycle and period, the HCG reflection phase can be varied, in effect giving different optical cavity lengths for HCG-VCSELs with different grating parameters. This enables fabrication of monolithic multi-wavelength HCG-VCSEL arrays for wavelength-division multiplexing (WDM). The GaAs HCG is suspended in air by removing a sacrificial layer of InGaP. Electrically-injected 980-nm HCG-VCSELs with sub-mA threshold currents indicate high reflectivity from the GaAs HCGs. Lasing over a wavelength span of 15 nm was achieved, enabling a 4-channel WDM array with 5 nm channel spacing. A large wavelength setting span was enabled by an air-coupled cavity design and the use of only the HCG as top mirror.
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65.
  • Haglund, Emanuel, 1988, et al. (författare)
  • Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL
  • 2016
  • Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781510600010 ; 9766
  • Konferensbidrag (refereegranskat)abstract
    • We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based “half-VCSEL” is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAs- and the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of 5 μm and a threshold current of 0.4 mA provides 0.6 mW output power at 845 nm. The VCSEL exhibits a modulation bandwidth of 11 GHz and can transmit data up to 20 Gbps.
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66.
  • Haglund, Erik, 1985, et al. (författare)
  • GaAs High-Contrast Gratings with InGaP Sacrificial Layer for Multi-Wavelength VCSEL Arrays
  • 2016
  • Ingår i: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. - 9784885523069 ; TuD2, s. Article n0 7765746-
  • Konferensbidrag (refereegranskat)abstract
    • We report on highly reflective suspended GaAs high-contrast gratings (HCGs) using an InGaP sacrificial layer. A high reflectivity approaching 100% was observed both in direct reflectivity measurement and by low threshold currents in fabricated multi-wavelength HCG-VCSEL arrays.
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67.
  • Haglund, Erik, 1985, et al. (författare)
  • High-contrast gratings for WDM VCSEL arrays
  • 2014
  • Ingår i: Optics & Photonics in Sweden, 11-12 Nov. 2014, Göteborg.
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • Vertical-cavity surface-emitting lasers (VCSELs) have become the workhorse of short-reach optical interconnects in datacenters and supercomputers. The last few years have seen an impressive increase in VCSEL modulation bandwidth, enabling record-high single-channel data rates exceeding 60 Gbit/s [1]. In addition to higher single-channel rates, interconnect capacity may be enhanced by employing multiplexing techniques such coarse wavelength division multiplexing (WDM). WDM VCSEL arrays can be designed using a high-contrast grating (HCG) as top mirror instead of a distributed Bragg reflector (DBR) [2]. The HCG consists of a subwavelength grating of high refractive index material (GaAs) surrounded by low refractive index material (air), see figure 1. The result is a thin, broad-band and highly reflective mirror. The reflection from the HCG has a varying phase depending on grating geometry. This can be used to set the HCG-VCSEL wavelength in a post-growth process by fabricating gratings with different period and duty-cycle. A first proof of concept has been realized and HCG-VCSELs showing resonances covering a span exceeding 20 nm have been demonstrated. Figure 1: Top: schematic figure of HCG-VCSEL array. Left: Top and cross-sectional SEM image of HCG. Right: Simulated and experimental HCG-VCSEL resonance wavelength for different duty cycles and periods (p) measured by electroluminescence. References[1] D. Kuchta et al., “64Gb/s Transmission over 57m MMF using an NRZ Modulated 850nm VCSEL,” OFC 2014[2] V. Karagodsky et al., “Monolithically integrated multi-wavelength VCSEL arrays using high-contrast gratings,” Opt. Express, 18(2), 2010
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68.
  • Haglund, Erik, 1985, et al. (författare)
  • High-power single transverse and polarization mode VCSEL for silicon photonics integration
  • 2019
  • Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 27:13, s. 18892-18899
  • Tidskriftsartikel (refereegranskat)abstract
    • © 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. We demonstrate a 6.5 mW single transverse and polarization mode GaAs-based oxide-confined VCSEL at 850 nm. High power is enabled by a relatively large oxide aperture and an epitaxial design for low resistance, low optical loss, and high slope efficiency VCSELs. With the oxide aperture supporting multiple polarization unrestrained transverse modes, single transverse and polarization mode operation is achieved by a transverse and polarization mode filter etched into the surface of the VCSEL. While the VCSEL is specifically designed for light source integration on a silicon photonic integrated circuit, its performance in terms of power, spectral purity, polarization, and beam properties are of great interest for a large range of applications.
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69.
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