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Search: db:Swepub > Lund University > Halmstad University > Pettersson Håkan 1962

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1.
  • Aghaeipour, Mahtab, et al. (author)
  • Comparative study of absorption efficiency of inclined and vertical InP nanowires
  • 2017
  • In: Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI. - Bellingham, WA : SPIE - International Society for Optical Engineering. - 9781510606401 ; 10099
  • Conference paper (peer-reviewed)abstract
    • Geometrically designed III-V nanowire arrays are promising candidates for optoelectronics due to their possibility to excite nanophotonic resonances in absorption spectra. Strong absorption resonances can be obtained by proper tailoring of nanowire diameter, length and pitch. Such enhancement of the light absorption is, however, accompanied by undesired resonance dips at specific wavelengths. In this work, we theoretically show that tilting of the nanowires mitigates the absorption dips by exciting strong Mie resonances. In particular, we derive a theoretical optimum inclination angle of about 30 degrees at which the inclined nanowires gain 8% in absorption efficiency compared to vertically standing nanowires in a spectral region matching the intensity distribution of the sun. The enhancement is due to engineering the excited modes inside the nanowires regarding the symmetry properties of the nanowire/light system without increasing the absorbing material. We expect our results to be important for nanowire-based photovoltaic applications. © 2017 SPIE.
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2.
  • Aghaeipour, Mahtab, et al. (author)
  • Enhanced optical absorption in nanowires over a desire range of wavelengths
  • 2017
  • In: MOC2017 : technical digest of the Twenty-Second Microoptics Conference. - : IEEE. - 9784863486096 - 9781509049240 ; , s. 360-361
  • Conference paper (peer-reviewed)abstract
    • Engineering optical absorption in nanowires, over a desire range of wavelengths is of importance to design high-performance nanowire-based photovoltaics. To this end, we integrate the nanowires with distributed Bragg reflectors to enhance absorption spectra of the nanowires and relate the consequent enhancement to increasing the optical path lengths of the modes. © 2017 The Japan Society of Applied Physics.
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3.
  • Aghaeipour, Mahtab (author)
  • Tailoring the Optical Response of III-V Nanowire Arrays
  • 2017
  • Doctoral thesis (other academic/artistic)abstract
    • Semiconductor nanowires show a great deal of promise for applications in a wide range of important fields, including photovoltaics, biomedicine, and information technology. Developing these exciting applications is strongly dependent on understanding the fundamental properties of nanowires, such as their optical resonances and absorption spectra. In this thesis we explore optical absorption spectra of arrays of vertical III-V nanowires with a special emphasis on structures optimized to enhance absorption in the solar spectrum. First, we analyze experimentally determined absorption spectra of both indium phosphide (InP) and gallium phosphide (GaP) nanowire arrays. The study provides an intuitive understanding of how the observed absorption resonances in the nanowires may be tuned as a function of their geometrical parameters and crystal structure. As a consequence, the spectral position of absorption resonances can be precisely controlled through the nanowire diameter. However, the results highlight how the blue-shift in the optical absorption resonances as the diameter of the nanowires decreases comes to a halt at low diameters. The stop point is related to the behavior of the refractive indices of the nanowires. The wavelength of the stop is different for nanowire polytypes of similar dimensions due to differences in their refractive indices. We then present a theoretical argument that it is important to consider symmetry properties when tailoring the optical modes excited in the nanowires for enhanced absorption. We show that absorption spectra may be enhanced compared to vertical nanowires at normal incidence by tilting the nanowires with normal incidence light, or by using off-normal incidence with vertical nanowires. This is because additional optical modes inside the nanowires are excited when the symmetry is broken. Looking forward to omnidirectional applications, we consider branched nanowires as a way to enhance the absorption spectra at normal incidence by taking advantage of simultaneous excitation of the spectrally different optical modes in the branches and the stems. Third, we describe in theoretical terms how integrating distributed Bragg reflectors (DBRs) with the nanowires can improve absorption spectra compared to conventional nanowires. DBRs provide a way to employ light trapping mechanisms which increases the optical path length of the excited modes and thereby improves the absorption of the excited modes. At normal incidence, DBR-nanowires improve the absorption efficiency to 78%, compared to 72% for conventional nanowires. We show that the efficiency is increased to 85% for an off-normal incident angle of 50˚. Overall, our results show that studies of optical resonances in nanowires that take the light-matter interaction into account provide opportunities to develop novel optical and optoelectronic functionalities in nanoscience and nanotechnology.
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4.
  • Borschel, Christian, et al. (author)
  • A New Route toward Semiconductor Nanospintronics : Highly Mn-Doped GaAs Nanowires Realized by Ion-Implantation under Dynamic Annealing Conditions
  • 2011
  • In: Nano letters (Print). - Washington : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 11:9, s. 3935-3940
  • Journal article (peer-reviewed)abstract
    • We report on highly Mn-doped GaAs nanowires (NWs) of high crystalline quality fabricated by ion beam implantation, a technique that allows doping concentrations beyond the equilibrium solubility limit. We studied two approaches for the preparation of Mn-doped GaAs NWs: First, ion implantation at room temperature with subsequent annealing resulted in polycrystalline NWs and phase segregation of MnAs and GaAs. The second approach was ion implantation at elevated temperatures. In this case, the single-crystallinity of the GaAs NWs was maintained, and crystalline, highly Mn-doped GaAs NWs were obtained. The electrical resistance of such NWs dropped with increasing temperature (activation energy about 70 meV). Corresponding magnetoresistance measurements showed a decrease at low temperatures, indicating paramagnetism. Our findings suggest possibilities for future applications where dense arrays of GaMnAs nanowires may be used as a new kind of magnetic material system.
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5.
  • Chalangar, Ebrahim, 1984-, et al. (author)
  • Influence of morphology on electrical and optical properties of graphene/Al-doped ZnO-nanorod composites
  • 2018
  • In: Nanotechnology. - Bristol : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 29:41
  • Journal article (peer-reviewed)abstract
    • The development of future 3D-printed electronics relies on the access to highly conductive inexpensive materials that are printable at low temperatures (<100 C). The implementation of available materials for these applications are, however, still limited by issues related to cost and printing quality. Here, we report on the simple hydrothermal growth of novel nanocomposites that are well suited for conductive printing applications. The nanocomposites comprise highly Al-doped ZnO nanorods grown on graphene nanoplatelets (GNPs). The ZnO nanorods play the two major roles of (i) preventing GNPs from agglomerating and (ii) promoting electrical conduction paths between the graphene platelets. The effect of two different ZnO-nanorod morphologies with varying Al-doping concentration on the nanocomposite conductivity and the graphenedispersity are investigated. Time-dependent absorption, photoluminescence and photoconductivity measurements show that growth in high pH solutions promotes a better graphene dispersity, higher doping levels and enhanced bonding between the graphene and the ZnO nanorods. Growth in low pH solutions yields samples characterized by a higher conductivity and a reduced number of surface defects. These samples also exhibit a large persistent photoconductivity attributed to an effective charge separation and transfer from the nanorods to the graphene platelets. Our findings can be used to tailor the conductivity of novel printable composites, or for fabrication of large volumes of inexpensive porous conjugated graphene-semiconductor composites. © 2018 IOP Publishing Ltd.
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6.
  • Chalangar, Ebrahim, PhD student, 1984-, et al. (author)
  • Nanopatterned rGO/ZnO : Al seed layer for vertical growth of single ZnO nanorods
  • 2023
  • In: Nanotechnology. - Bristol : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 34:25, s. 1-7
  • Journal article (peer-reviewed)abstract
    • In this work, we demonstrate a novel low-cost template-assisted route to synthesize vertical ZnO nanorod arrays on Si (100). The nanorods were grown on a patterned double seed layer comprised of reduced graphene oxide (rGO) and Al-doped ZnO nanoparticles. The seed layer was fabricated by spray-coating the substrate with graphene and then dip-coating it into a Al-doped ZnO sol-gel solution. The growth template was fabricated from a double-layer resist, spin-coated on top of the rGO/ZnO:Al seed layer, and patterned by colloidal lithography. The results show a successful chemical bath deposition of vertically aligned ZnO nanorods with controllable diameter and density in the nanoholes in the patterned resist mask. Our novel method can presumably be used to fabricate electronic devices on virtually any smooth substrate with a thermal budget of 1 min at 300 °C with the seed layer acting as a conductive strain-relieving back contact. The top contact can simply be made by depositing a suitable transparent conductive oxide or metal, depending on the specific application. © 2023 The Author(s). Published by IOP Publishing Ltd.
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7.
  • Devi, Chandni, et al. (author)
  • Electrical transport properties of InAs nanowires synthesized by a solvothermal method
  • 2020
  • In: Nanotechnology. - Bristol : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 31:23
  • Journal article (peer-reviewed)abstract
    • Nanowires are widely considered to be key elements in future disruptive electronics and photonics. This paper presents the first detailed study of transport mechanisms in single-crystalline InAs nanowires synthesized by a cheap solvothermal wet chemical method. From detailed analyses of temperature-dependent current-voltage characteristics, it was observed that contacted nanowires operate in a linear transport regime at biases below a critical cross-over voltage. For larger biases, the transport changes to space-charge-limited conduction assisted by traps. The characteristic parameters such as free electron concentration, trap concentration and energy distribution, and electron mobility were all calculated. It was demonstrated that the nanowires have key electrical properties comparable to those of InAs nanowires grown by molecular beam epitaxy. Our results might pave the way for cheap disruptive low-dimensional electronics such as resistive switching devices. © 2020 IOP Publishing Ltd.
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8.
  • Devi, Chandni, et al. (author)
  • High sodium ionic conductivity in PEO/PVP solid polymer electrolytes with InAs nanowire fillers
  • 2021
  • In: Scientific Reports. - London : Nature Publishing Group. - 2045-2322. ; 11:1
  • Journal article (peer-reviewed)abstract
    • Solid-state sodium ion batteries are frequently referred to as the most promising technology for next-generation energy storage applications. However, developing a suitable solid electrolyte with high ionic conductivity, excellent electrolyte–electrode interfaces, and a wide electrochemical stability window, remains a major challenge. Although solid-polymer electrolytes have attracted great interest due to their low cost, low density and very good processability, they generally have significantly lower ionic conductivity and poor mechanical strength. Here, we report on the development of a low-cost composite solid polymer electrolyte comprised of poly(ethylene oxide), poly(vinylpyrrolidone) and sodium hexafluorophosphate, mixed with indium arsenide nanowires. We show that the addition of 1.0% by weight of indium arsenide nanowires increases the sodium ion conductivity in the polymer to 1.50 × 10−4 Scm−1 at 40 °C. In order to explain this remarkable characteristic, we propose a new transport model in which sodium ions hop between close-spaced defect sites present on the surface of the nanowires, forming an effective complex conductive percolation network. Our work represents a significant advance in the development of novel solid polymer electrolytes with embedded engineered ultrafast 1D percolation networks for near-future generations of low-cost, high-performance batteries with excellent energy storage capabilities. © 2021, The Author(s).
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9.
  • Hussain, Laiq, 1979-, et al. (author)
  • SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE
  • 2018
  • In: Journal of the Korean Physical Society. - : Korean Physical Society. - 0374-4884 .- 1976-8524. ; 73:11, s. 1604-1611
  • Journal article (peer-reviewed)abstract
    • Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of GaAsxSb1−x, In1−xGaxSb, and InAsxSb1−x with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from 2 μm to 12 μm in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from InAsxSb1−x and In1−xGaxSb samples even at room temperature show promising potential for IR photodetector applications.
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10.
  • Höglund, Linda, 1974-, et al. (author)
  • Origin of photocurrent in lateral quantum dots-in-a-well infrared photodetectors
  • 2006
  • In: Applied Physics Letters. - New York : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 88:21
  • Journal article (peer-reviewed)abstract
    • Interband and intersubband transitions of lateral InAs/In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetectors were studied in order to determine the origin of the photocurrent. The main intersubband transition contributing to the photocurrent (PC) was associated with the quantum dot ground state to the quantum well excited state transition. By a comparison between intersubband PC measurements and the energy level scheme of the structure, as deduced from Fourier transform photoluminescence (FTPL) and FTPL excitation spectroscopies, the main transition contributing to the PC was identified.
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