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Träfflista för sökning "WFRF:(Paskova Tanja 1961 ) srt2:(2004)"

Sökning: WFRF:(Paskova Tanja 1961 ) > (2004)

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1.
  • Darakchieva, Vanya, 1971-, et al. (författare)
  • Deformation potentials of the E1 (TO) and E2 modes of InN
  • 2004
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 84:18, s. 3636-3638
  • Tidskriftsartikel (refereegranskat)abstract
    • The determination of deformation potentials of E1(TO) and E 2 modes of InN were discussed. The deformation potentials were evaluated for two sets of stiffness constants using x-ray diffraction, IR spectroscopic ellipsometry (IRSE), Raman scattering, and Grüneisen parameter values. The InN layer were grown on GaN buffer layers on (0001) sapphire by molecular beam epitaxy. It was found that the strain-free values of the InN E1(TO) mode was 477.9 cm-1 and 491.9 cm -1 for the E2 modes.
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2.
  • Darakchieva, Vanya, 1971-, et al. (författare)
  • Strain-related structural and vibrational properties of thin epitaxial AIN layers
  • 2004
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 70:4, s. 045411-
  • Tidskriftsartikel (refereegranskat)abstract
    • The effect of film thickness on the strain and structural properties of thin epitaxial AIN films has been investigated by high resolution x-ray diffraction techniques and transmission electron microscopy. As a result a sublayer model of the degree of strain and related defects for all films is proposed. A sublayer with low defect density and a strain gradient is found to be present in all films and it reaches a maximum thickness of 65 nm. The films are compressively strained and the strain relaxation after a thickness of 65 nm is shown to be accompanied by misfit dislocation generation and increase of the mosaic tilt. The vibrational properties of the films have been studied by generalized infrared spectroscopic ellipsometry. The proposed sublayer model has been successfully applied to the analysis of the ellipsometry data through model calculations of the infrared dielectric function which confirm the sublayer model. It is found that the strain gradient results in a gradient of the phonon mode frequencies and broadening parameter. The initial strain relaxation in the films leads to narrowing of the observable infrared modes, while further strain relaxation broadens the modes when substantial defect generation occurs.
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4.
  • Paskova, Tanja, 1961-, et al. (författare)
  • Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy
  • 2004
  • Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 273:1-2, s. 118-128
  • Tidskriftsartikel (refereegranskat)abstract
    • A comprehensive study of the morphological, optical and microstructural properties of mass-transport (MT) and conventionally grown GaN by hydride vapour-phase epitaxy is presented. Spatially resolved techniques have been utilized to reveal in a comparative way, the characteristics of the material grown either in predominant vertical or lateral growth modes. A strong donor-acceptor pair (DAP) emission is observed from the MT regions with a distinctive intensity contrast between the exciton and DAP emission bands from MT and nontransport regions. Secondary ion mass spectroscopy and imaging were employed to investigate the impurity incorporation into different regions. An increase of residual oxygen and aluminium impurity concentrations was found in the MT areas. In addition, positron annihilation spectroscopy showed a strong signal of Ga vacancy clusters in the MT grown material. The increase of the point defect concentrations of both Ga vacancy and oxygen impurity, most likely forming defect complexes, is related to the enhancement of the DAP emission.
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5.
  • Strocov, V.N., et al. (författare)
  • Band structure effects in nitrogen K-edge resonant inelastic X-ray scattering from GaN
  • 2004
  • Ingår i: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 241:7
  • Tidskriftsartikel (refereegranskat)abstract
    • Systematic experimental data on resonant inelastic X-ray scattering (RIXS) in GaN near the N K-edge are presented for the first time. Excitation energy dependence of the spectral structures manifests the band structure effects originating from momentum selectivity of the RIXS process. This finding allows obtaining k-resolved band structure information for GaN crystals and nanostructures. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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  • Resultat 1-5 av 5

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