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- Ber, B. Y., et al.
(författare)
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Determination of nitrogen in silicon carbide by secondary ion mass spectrometry
- 2004
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Ingår i: Journal of Analytical Chemistry. - 1061-9348 .- 1608-3199. ; 59:3, s. 250-254
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Tidskriftsartikel (refereegranskat)abstract
- The emission of atomic and complex nitrogen ions, which are the main impurity determining the n type conduction of silicon carbide, is investigated. It is shown that, among all the secondary ions of the CxN and SixN kind (x = 0, 1, 2, 3), the (26)(CN)(-) fragment exhibits the highest ion yield. The use of an ion peak with a specified mass as an analytical signal provides a detection limit for nitrogen in SiC at a level of 10(16) cm(-3). This result is attained in measurements at high mass resolution (M/DeltaM = 7500, interference peak (26)(C-13(2))(-)).
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