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Enumeration	Reference	Cover	Find
31.	Tångring, Ivar, 1978, et al. (author) Metamorphic growth of 1.25 – 1.29 µm InGaAs quantum well lasers by molecular beam epitaxy 2007 In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 301:SPEC. ISS., s. 971-974 Journal article (peer-reviewed)abstract We demonstrate 1.25–1.29 μm metamorphic laser diodes grown on GaAs by molecular beam epitaxy (MBE) using an alloy-graded buffer layer (GBL). Use of Be in the GBL is effective to reduce surface/interface roughness and improves optical quality. The RMS surface roughness of the optimized metamorphic laser is only two atomic monolayers for 1×1 μm2. Cross-sectional transmission electron microscopy (TEM) images confirm that most dislocations are blocked in the GBL. Ridge waveguide lasers with 4 μm wide ridge were fabricated and characterized. The average threshold current under the pulsed excitation is in 170–200 mA for a cavity length of 0.9–1.5 mm. This value can be further reduced to about 100 mA by high-reflectivity coating. Lasers can work in an ambient temperature up to at least 50 °C.
32.	Wang, Shu Min, 1963, et al. (author) 1.3 µm GaInNAs Edge Emitting Lasers Grown by Molecular Beam Epitaxy 2009 In: Journal of Crystal Growth. - 0022-0248. ; 311, s. 1863-1867 Journal article (peer-reviewed)
33.	Wang, Shu Min, 1963, et al. (author) 1.3 to 1.5 um light emission from InGaAs/GaAs quantum wells 2004 In: Applied Physics Letter. ; 85, s. 875- Journal article (peer-reviewed)
34.	Wang, Shu Min, 1963, et al. (author) Dilute Nitrides and 1.3 μm GaInNAs Quantum Well Lasers on GaAs 2009 In: Microelectronics Journal. - 0959-8324. ; 40, s. 386-391 Journal article (peer-reviewed)
35.	Wang, Shu Min, 1963, et al. (author) Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE 2011 In: Physica Status Solidi (B): Basic Research. - : Wiley. - 1521-3951 .- 0370-1972. ; 248:5, s. 1207-1211 Journal article (peer-reviewed)abstract In this paper, we report recent progresses on growth of dilute nitrides and 1.3 mu m lasers on GaAs using molecular beam epitaxy at Chalmers University of Technology, Sweden. Intense long wavelength light emission up to 1.71 mu m at room temperature has been achieved by using the N irradiation method and the low growth rate. It is also demonstrated that incorporation of N in relaxed InGaAs buffer grown on GaAs strongly enhances the optical quality of metamorphic InGaAs quantum wells. With the optimized growth conditions and the laser structures, we demonstrate 1.3 mu m GaInNAs edge emitting lasers on GaAs with state-of-the-art performances including a low threshold current density, a high-characteristic temperature, a 3 dB bandwidth of 17 GHz and uncooled operation at 10 Gbit/s up to 110 degrees C. The laser performances are comparable with the best reported data from the InGaAsP lasers on InP and is superior to the InAs quantum dot lasers on GaAs.
36.	Wang, Shu Min, 1963, et al. (author) Very low threshold current density of 1.3 µm GaInNAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy 2005 In: Journal of Crystal Growth. ; 278, s. 734- Journal article (peer-reviewed)
37.	Wei, Yongqiang, 1975, et al. (author) 12. Long-Wavelength InGaAs/GaAs Quantum-Well Lasers Grown by Molecular Beam Epitaxy 2005 In: JOURNAL OF CRYSTAL GROWTH. ; 278, s. 747- Journal article (other academic/artistic)
38.	Wei, Yongqiang, 1975, et al. (author) 2. High performance 1.28 mm GaInNAs Double Quantum Well lasers 2005 In: ELECTRONICS LETTERS. ; 41:24, s. 1328- Journal article (other academic/artistic)
39.	Zhao, Qing Xiang, 1962, et al. (author) Optical properties of GaInNAs/GaAs quantum well structures 2007 In: Thin Solid Films. ; 515, s. 4423- Journal article (peer-reviewed)
40.	Zhao Ternehäll, Huan, 1982, et al. (author) A 1.31 μm GaInNAs Triple Quantum Well Laser with 13 GHz Small Signal Modulation Bandwidth 2009 In: Electronics Letters. - 1350-911X .- 0013-5194. ; 45, s. 356-357 Journal article (peer-reviewed)

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Result 31-40 of 42

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Type of publication: journal article (42)Undo refine

Type of content: peer-reviewed (39); other academic/artistic (3)

Author/Editor: Sadeghi, Mahdad,... (42)Undo refine; Larsson, Anders, 195 ... (42); Wang, Shu Min, 1963 (41); Wei, Yongqiang, 1975 (15); Zhao, Qing Xiang, 19 ... (12); Adolfsson, Göran, 19 ... (10); show more...; Zhao Ternehäll, Huan ... (8); Melanen, P. (7); Larkins, Eric (7); Gustavsson, Johan, 1 ... (6); Mackenzie, R (6); Sujecki, S. (6); Lim, Jun (5); Uusimaa, Peteri (5); Willander, Magnus (4); Lai, Zonghe, 1948 (4); Sipilä, Pekko (4); Lu, W (4); Bull, S (4); Lim, J.J. (4); Gu, Qinfen (3); Chao, S. (3); Foxon, Tom (3); Ferdos, Fariba, 1966 (3); Bengtsson, Jörgen, 1 ... (2); Vilokkinen, Ville (2); Haglund, Åsa, 1976 (2); Westbergh, Petter, 1 ... (2); Zhao, Qingxiang, 196 ... (2); Wang, Xiaodong (2); Andrianov, A.V. (2); Song, Yuxin, 1981 (2); Zhao, Qingxiang (2); Smowton, Peter (2); George, A.A. (2); Lu, X. (1); Willander, Magnus, 1 ... (1); Marcinkevicius, Saul ... (1); Hedekvist, Per Olof ... (1); Westlund, Mathias, 1 ... (1); Ma, L (1); Friesel, Milan, 1948 (1); Chen, Weimin, 1959- (1); Fu, Ying (1); Buyanova, Irina, 196 ... (1); Campion, R.P. (1); Shao, J. (1); Fu, Ying, 1964- (1); Wang, X D (1); Dumitrescu, M. (1); show less...

University: Chalmers University of Technology (42); Linköping University (7); University of Gothenburg (5); Royal Institute of Technology (1)

Language: English (42)

Research subject (UKÄ/SCB): Engineering and Technology (36); Natural sciences (12)

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