| 1. |
- Westbergh, Petter, 1981, et al.
(författare)
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Single mode 1.3 ÎŒm InGaAs VCSELs for access network applications
- 2008
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Ingår i: Semiconductor Lasers and Laser Dynamics III. - : SPIE. ; 6997, s. 69970Y-1-8-
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Konferensbidrag (refereegranskat)abstract
- GaAs-based VCSELs emitting near 1.3 Όm are realized using highly strained InGaAs quantum wells and a large detuning of the cavity resonance with respect to the gain peak. The VCSELs have an oxide aperture for current and optical confinement and an inverted surface relief for suppression of higher-order transverse modes. The inverted surface relief structure also has the advantage of suppressing oxide modes that otherwise appear in VCSELs with a large detuning between the cavity resonance and the gain peak. Under large signal, digital modulation, clear and open eyes and error free transmission over 9 km of single mode fiber have been demonstrated at the OC-48 and 10 GbE bit rates up to 85°C. Here we review these results and present results from a complementary study of the RF modulation characteristics, including second order harmonic and third order intermodulation distortion, relative intensity noise (RIN), and spurious free dynamic range (SFDR). RIN levels comparable to those of single mode VCSELs emitting at 850 nm are demonstrated, with values from -140 to -150 dB/Hz. SFDR values of 100 and 95 dB·Hz2/3 were obtained at 2 and 5 GHz, respectively, which is in the range of those required in radio-over-fiber systems.
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| 2. |
- Zhao Ternehäll, Huan, 1982, et al.
(författare)
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Comparison of optical and structural quality of GaIn(N) As analog and digital quantum wells grown by molecular beam epitaxy
- 2008
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 23:12, s. 125002-
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Tidskriftsartikel (refereegranskat)abstract
- A set of Ga0.625In0.375(N) As single quantum well (QW) samples with the identical total amounts of Ga and In and QW thicknesses was designed and grown by both the analog and the digital methods using molecular beam epitaxy. The N exposure time in the GaInNAs samples was kept the same. The inter-band gap recombination in the analog and the digital InGaAs QWs appears in a similar transition energy range as a result of In segregation. Temperature-dependent photoluminescence (PL) measurements were performed on the GaInNAs samples. An S-shaped dependence of the transition energy on temperature was observed in the digital GaInNAs QWs but not in the analog GaInNAs QW. Post-growth rapid thermal annealing had remarkably different effects on the PL intensity: an increase for the analog InGaAs QW and for the analog and digital GaInNAs QWs, but a decrease for the digital InGaAs QW with increasing annealing temperature. The GaIn(N) As samples grown by the digital method showed weaker PL intensities and smaller wavelength blue-shifts than the similar samples grown by the analog method. Possible strain relaxation mechanisms are discussed.
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| 3. |
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| 4. |
- Adolfsson, Göran, 1981, et al.
(författare)
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Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3 um Double Quantum-Well GaInNAs/GaAs Lasers
- 2008
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Ingår i: IEEE Journal of Quantum Electronics. ; 44:7, s. 607-616
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Tidskriftsartikel (refereegranskat)abstract
- We present an experimental and theoretical investigationof the temperature dependence of the threshold current fordouble quantum well GaInNAs–GaAs lasers in the temperaturerange 10 C–110 C. Pulsed measurements of the threshold current have been performed on broad and narrow ridge wave guide(RWG) lasers. The narrow RWG lasers exhibit high characteristic temperatures (T0)of 200 K up to a critical temperature (Tc), above which T0 is reduced by approximately a factor of 2. The T0-values for broad RWG lasers are significantly lower than those for the narrow RWG lasers, with characteristic temperatures on the order of 100 (60) K below (above). Numerical simulations, using a model that accounts for lateral diffusion effects, show good agreement with experimental data and reveal that a weakly temperature dependent lateral diffusion current dominates thethreshold current for narrow RWG lasers.
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| 5. |
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| 6. |
- Dumitrescu, M., et al.
(författare)
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Un-Cooled 10 Gb/s dilute-nitride optical transmitters for the 1300 nm wavelength range
- 2008
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Ingår i: 2008 International Semiconductor Conference, CAS 2008; Sinaia; Romania; 13 October 2008 through 15 October 2008. - 9781424420049 ; 1, s. 61-70
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Konferensbidrag (refereegranskat)abstract
- Dilute-nitride-based edge-emitting Fabry-Perot lasers with record performances have been used to build un-cooled optical transceiver modules. The paper presents and analyses some of the achieved performances starting from chip level to optical link transmission experiments. The studies, performed within the EU-FP6 project FAST ACCESS, prove that the dilute-nitride GaInAsN lasers are a good solution for low-cost un-cooled transmitters targeting short and medium distance optical communications in a wide range of applications, from supercomputers and server farms to metropolitan and access area networks.
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| 7. |
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| 8. |
- Lim, J.J., et al.
(författare)
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Static and dynamic performance optimization of a 1.3 µm GaInNAs ridge waveguide laser
- 2008
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Ingår i: 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08; Nottingham; United Kingdom; 1 September 2008 through 4 September 2008. - 9781424423071 ; , s. 121-122
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Konferensbidrag (refereegranskat)abstract
- In this work, we optimise the structure of an uncooled directly modulated 1.3 μm GaInNAs ridge waveguide laser for high temperature operation. The static and dynamic performance of the optimised design is analyzed using an accurate in-house 2D electro-opto-thermal laser simulator. The optimised structure Is shown to have a lower threshold current, higher efficiency, higher modulation bandwidth and lower vertical beam divergence compared to a reference structure with a conventional design. Large-signal 10 Gbit/s digital modulation simulations were performed and demonstrate the improved performance of the optimised structure especially under high temperature operation.
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| 9. |
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| 10. |
- Lim, Jun, et al.
(författare)
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Static and dynamic performance optimisation of a 1.3 mu m GaInNAs ridge waveguide laser
- 2008
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Ingår i: Optical and Quantum Electronics. - : Springer Science and Business Media LLC. - 0306-8919 .- 1572-817X. ; 40:14-15, s. 1181-1186
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we perform a multi-parameter design study to improve the performance of an uncooled directly modulated 1.3 mu m GaInNAs ridge waveguide laser for high speed operation especially at high temperature. The static and dynamic performance of the improved design is analyzed using an accurate in-house 2D electro-opto-thermal laser simulator. The improved structure is shown to have a lower threshold current, higher thermal roll-over limit and higher modulation bandwidth-especially under high temperature operation. The improved structure also has a lower vertical beam divergence compared to a reference structure with a conventional design.
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