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- Gustavsson, Johan, 1974, et al.
(författare)
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Mode and polarization control in VCSELs using shallow surface structures
- 2007
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Ingår i: IET Optoelectronics. ; 1:5, s. 197-205
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Tidskriftsartikel (refereegranskat)abstract
- Monolithic techniques for mode and polarisation control in vertical-cavity surface emitting lasers (VCSELs) using shallow surface structures are summarized and put in the context with other techniques in terms of performance and manufacturability. The method of using circular-symmetric surface structures for mode control and their combination with a sub-wavelength surface grating for simultaneous mode and polarisation control is described in detail, and adherent experimental results for both 850-nm and 1.3-µm oxide-confined VCSELs are presented.
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- Farmakis, F. V., et al.
(författare)
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Field-effect transistors with thin ZnO as active layer for gas sensor applications
- 2007
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 85:5-6, s. 1035-1038
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Konferensbidrag (refereegranskat)abstract
- Zinc oxide based field-effect devices prepared for gas sensing applications are studied. For this purpose, bottom-gate transistors were fabricated using Pd as source and drain interdigitated electrodes with gate lengths varying from 0.3 to 2 mu m. Thin (50 nm) zinc oxide films were grown with the aid of pulsed laser deposition (PLD) at room temperature and served as active and sensing layer. AFM and XRD analysis demonstrated the polycrystalline nature of the c-axis oriented ZnO films with nanoscale grain size (20-40 nm) with relatively high average roughness. Electrical and gas sensing measurements from the above-mentioned devices are presented. (C) 2008 Elsevier B.V. All rights reserved.
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- Tsunoda, D., et al.
(författare)
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Proximity effect correction for 20nm dimension patterning
- 2009
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819475244 ; 7271
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Konferensbidrag (refereegranskat)abstract
- Electron Beam Direct Writing (EBDW) has been applied to various applications such as prototyping or small amount production of electronic devices. Originally, proximity effect in EBDW is considered as the problem of the background energy difference caused by the pattern density distribution. However, the critical dimensions of target patterns are getting smaller, we cannot ignore influences of the forward scattering. Theoretically, when the critical dimension is close to 3 or 4 times of forward scattering range, influence cannot be ignored. For example, in case ofthat corresponds, fabricating 20 nm dimension patterns by Nano Imprint Lithography (NIL) which is significant candidate of next generation lithography technology. Because it requires original dimension (1:1) mold. Therefore proximity effect correction (PEC) system which considers the forward scattering must be important. We developed simulation-based proximity effect correction system combined with data format conversion, works on Linux PC cluster. And we exposed the patterns which are dose compensated by this system. Firstly, we have speculated parameters about backward scattering parameters by exposing 100 nm line and space patterns. We got following parameters, beta (backward scattering range) = 32 urn, eta (backward scattering coefficient) = 2.5. Secondary, we have exposed Line and Space patterns whose dimensions are from 20 nm to 100 nm. We found that smaller and dense patterns have trend to be over exposed and bigger. Experimental specification is following, EB Direct Writing system is JBX-9300FS (lOOkeV ace. Voltage) by JEOL co.ltd, (Japan) , resist is HSQ (FOx 12) by Dow Coming co. (United States), substrate is Si.
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| 9. |
- Vlad, A., et al.
(författare)
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Highly Ordered Conjugated Polymer Nanoarchitectures with Three-Dimensional Structural Control
- 2009
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 9:8, s. 2838-2843
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Tidskriftsartikel (refereegranskat)abstract
- Conductive polymers are a class of materials with vast potential for tomorrow's ultra-large-scale technologies as they combine structural and functional diversity with flexible synthesis and processing approaches. A missing component, with their subtle chemical structure, is reliable building at nanoscale. Here we report on the patterning of polyaniline, a prototypical conjugated polymer, with an unprecedented areal patterning order and density exceeding 0.25 teradot/inch(2), With template-confined growth, through platinum-surface-catalyzed polymerization of aniline, highly ordered arrays of distinct polyaniline nanowires are produced with a typical diameter
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