| 1. |
- Carlsson, Christina, 1975, et al.
(författare)
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RF transmission over multimode fibers using VCSELs-comparing standard and high bandwidth multimode fibers
- 2004
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Ingår i: Journal of Lightwave Technology. - 0733-8724 .- 1558-2213. ; 22:7, s. 1694-1700
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Tidskriftsartikel (refereegranskat)abstract
- Fiber-optic radio-frequency links have been assembled using oxide-confined vertical-cavity surface-emitting lasers (VCSELs) and multimode fibers. Links with single and multimode VCSELs and with standard and high-bandwidth fibers have been evaluated and compared in the frequency range of 0.1-10 GHz. The best results were obtained for links with a multimode VCSEL and a high-bandwidth fiber. For a 500-m-long link, a spurious free dynamic range of 104 dB. HZ(2/3) at 2 GHz and 100 dB (.) Hz(2/3) at 5, GHz were obtained while allowing for a VCSEL-fiber misalignment of +/-12 mum. Corresponding numbers for the intrinsic link gain and noise figure are -29 and -33 dB, and 39 and 42 dB at 2 and 5 GHz, respectively. Inferior performance Was observed for the standard fiber link due to a larger variation in modal group velocities. This paper also presents a detailed link analysis to identify performance limitations and to suggest modifications for improved performance.
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| 2. |
- Ferdos, Fariba, 1966, et al.
(författare)
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Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots
- 2002
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:7, s. 1195-7
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Tidskriftsartikel (refereegranskat)abstract
- In this letter we investigate the changes in the surface morphology and emission wavelength of InAs quantum dots (QDs) during initial GaAs encapsulation by atomic force microscopy and photoluminescence. The density (2.9×1010 cm-2) and height (7.9±0.4 nm) of the uncapped QDs decrease and saturate at 0.6×1010 cm-2 and 4 nm, respectively, after the deposition of 4 monolayers (MLs) of GaAs. A model for the evolution of surface morphology is proposed. Photoluminescence spectra of the surface dots show a wavelength shift from 1.58 to 1.22 ?m when the GaAs capping layer thickness increases from 0 to 8 MLs.
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| 3. |
- Ferdos, Fariba, 1966, et al.
(författare)
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Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy
- 2003
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Ingår i: Journal of Crystal Growth. - 0022-0248. ; 251:1-4, s. 145-9
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Tidskriftsartikel (refereegranskat)abstract
- Capping of InAs quantum dots (QDs) with AlAs or GaAs causes a significant change in the structural properties of the QDs. However, there is a basic difference between these two capping materials. The GaAs capping causes a dramatic reduction of the dot density and height. AlAs capping, on the other hand, results in a partly suppressed height reduction and a higher dot density.
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| 4. |
- Ferdos, Fariba, 1966, et al.
(författare)
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Influence of thin GaAs and AlAs cap layers on the structural properties of InAs quantum dots grown by molecular beam epitaxy
- 2002
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Ingår i: International Conference on Molecular Beam Epitaxy, 2002. ; , s. 285-6
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Konferensbidrag (refereegranskat)abstract
- Self-organised InAs quantum dots (QDs) are used as optical gain material in long wavelength lasers on GaAs. The measured QD height and density are often used as figures of merits, and great efforts have been made to maximise these two parameters to extend the wavelength coverage. In this work, we investigate the influence of initial GaAs and AlAs cap layers on the structural properties of InAs QDs. The study clearly shows that capping of InAs QDs causes a strong modification of not only the QD shape and height but also the QD density
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| 5. |
- Ferdos, Fariba, 1966, et al.
(författare)
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Optimisation of MBE growth conditions for InAs quantum dots on (001) GaAs for 1.3 μm luminescence
- 2001
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Ingår i: Journal of Crystal Growth. - 0022-0248. ; 227-228, s. 1140-5
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Tidskriftsartikel (refereegranskat)abstract
- We present a study of the optimised growth conditions for InAs quantum dots (QDs) grown on GaAs substrates by solid source molecular beam epitaxy (SSMBE). Growth conditions for best luminescence intensity and linewidth were found within narrow windows of substrate temperature (500-520°C) and nominal InAs layer thickness (3.3-3.7 monolayers). The emission wavelength of such InAs QDs capped by GaAs was around 1.24 ?m. However, this is redshifted to 1.3 ?m or more by capping the InAs QDs with a thin layer of InxGa1-xAs. The results show that both In content and thickness of the capping layer can be used to tune the emission wavelength. Atomic force microscopy images show that the surface recovers to two-dimensional when depositing In0.2Ga0.8As while remaining three-dimensional when depositing In0.4Ga0.6As.
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| 6. |
- Gevorgian, Spartak, 1948, et al.
(författare)
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Optical electromagnetic wave generator
- 2003
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Patent (övrigt vetenskapligt/konstnärligt)abstract
- Microwaves are generated by heterodyning the outputs of two or more optical lasers which have differing central frequencies to produce beat frequencies in the microwave range. One of the beat frequencies is used to modulate the output of at least one of the lasers so as to produce sidebands which differ from the central frequency by an integral number of the sideband frequency. Each laser is connected to one of the other lasers by a weak optical link to optically injection lock the laser to the sideband of the other laser
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| 7. |
- Gevorgian, Spartak, 1948, et al.
(författare)
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Optical electromagnetic wave generator
- 2001
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Microwaves are generated by heterodyning the outputs of two or more optical lasers which have differing central frequencies to produce beat frequencies in the microwave range. One of the beat frequencies is used to modulate the output of at least one of the lasers so as to produce sidebands which differ from the central frequency by an integral number of the sideband frequency. Each laser is connected to one of the other lasers by a weak optical link to optically injection lock the laser to the sideband of the other laser
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