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Träfflista för sökning "LAR1:lu ;pers:(Samuelson Lars)"

Sökning: LAR1:lu > Samuelson Lars

  • Resultat 61-70 av 629
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61.
  • Bryllert, Tomas, et al. (författare)
  • Transport through an isolated artificial molecule formed from stacked self-assembled quantum dots
  • 2003
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 82:16, s. 2655-2657
  • Tidskriftsartikel (refereegranskat)abstract
    • We investigate resonant tunneling through two coupled self-assembled quantum dots. The strong confinement and the high crystalline quality provided by the self-assembled dots, in combination with the tunneling coupling between the dots, create a system that may be thought of as an artificial molecule. We are able to isolate one single artificial molecule and detailed investigations of the electrical properties are performed. Peak-to-valley ratios above 1000 and full width half maximum of a few millivolts are measured at 4 K. By changing the temperature we also observe Coulomb blockade effects in a different way. (C) 2003 American Institute of Physics.
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62.
  • Bryllert, Tomas, et al. (författare)
  • Vertical high-mobility wrap-gated InAs nanowire transistor
  • 2006
  • Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 27:5, s. 323-325
  • Tidskriftsartikel (refereegranskat)abstract
    • In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 x 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V-ds = 0.15 V (V-g = 0 V), and a high mobility, compared to the previous nanowire transistors, is deduced.
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63.
  • Bryllert, Tomas, et al. (författare)
  • Vertical high mobility wrap-gated InAs nanowire transistor
  • 2005
  • Ingår i: 63rd Device Research Conference Digest, 2005. DRC '05. - 0780390407 ; 1
  • Konferensbidrag (refereegranskat)abstract
    • We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs nanowires (Jensen, et. al., 2004). A lower limit of the mobility, derived from the transconductance, is on the order of 3000 cm2/Vs. The narrow ~100 nm channels show excellent current saturation and a threshold of Vg = -0.15 V. The sub-threshold characteristics show a close to ideal slope of 62mV/decade over two orders of magnitude
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64.
  • Bryllert, Tomas, et al. (författare)
  • Vertical wrap-gated nanowire transistors
  • 2006
  • Ingår i: Nanotechnology. - 0957-4484. ; 17:11, s. 227-230
  • Tidskriftsartikel (refereegranskat)abstract
    • We present a process for fabricating a field-effect transistor based on vertically standing InAs nanowires and demonstrate initial device characteristics. The wires are grown by chemical beam epitaxy at lithographically defined locations. Wrap gates are formed around the base of the wires through a number of deposition and etch steps. The fabrication is based on standard III - V processing and includes no random elements or single nanowire manipulation.
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65.
  • Burke, Adam, et al. (författare)
  • InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments.
  • 2015
  • Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 15:5, s. 2836-2843
  • Tidskriftsartikel (refereegranskat)abstract
    • We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favorable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures.
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66.
  • Carlberg, Patrick, et al. (författare)
  • Nanoimprint - a tool for realizing nano-bio research
  • 2004
  • Ingår i: 2004 4th IEEE Conference on Nanotechnology. - 0780385365 ; , s. 199-200
  • Konferensbidrag (refereegranskat)abstract
    • In this paper, we present a status report on how implementation of nanoimprint lithography has advanced our research. Contact guidance nerve growth experiments have so far primarily been done on micrometer-structured surfaces. We have made a stamp with 17 areas of different, submicron, line width and spacing covering a total 2.6 mm
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67.
  • Caroff, Philippe, et al. (författare)
  • Controlled polytypic and twin-plane superlattices in iii-v nanowires.
  • 2009
  • Ingår i: Nature Nanotechnology. - : Springer Science and Business Media LLC. - 1748-3395 .- 1748-3387. ; 4:1, s. 50-55
  • Tidskriftsartikel (refereegranskat)abstract
    • Semiconductor nanowires show promise for use in nanoelectronics, fundamental electron transport studies, quantum optics and biological sensing. Such applications require a high degree of nanowire growth control, right down to the atomic level. However, many binary semiconductor nanowires exhibit a high density of randomly distributed twin defects and stacking faults, which results in an uncontrolled, or polytypic, crystal structure. Here, we demonstrate full control of the crystal structure of InAs nanowires by varying nanowire diameter and growth temperature. By selectively tuning the crystal structure, we fabricate highly reproducible polytypic and twin-plane superlattices within single nanowires. In addition to reducing defect densities, this level of control could lead to bandgap engineering and novel electronic behaviour.
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68.
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69.
  • Carrad, Damon J., et al. (författare)
  • Electron-Beam Patterning of Polymer Electrolyte Films To Make Multiple Nanoscale Gates for Nanowire Transistors
  • 2014
  • Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 14:1, s. 94-100
  • Tidskriftsartikel (refereegranskat)abstract
    • We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.
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70.
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