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Träfflista för sökning "WFRF:(Brenning Nils) srt2:(2010-2013)"

Sökning: WFRF:(Brenning Nils) > (2010-2013)

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1.
  • Aijaz, Asim, et al. (författare)
  • A strategy for increased carbon ionization in magnetron sputtering discharges
  • 2012
  • Ingår i: Diamond and related materials. - : Elsevier BV. - 0925-9635 .- 1879-0062. ; 23, s. 1-4
  • Tidskriftsartikel (refereegranskat)abstract
    • A strategy that facilitates a substantial increase of carbon ionization in magnetron sputtering discharges is presented in this work. The strategy is based on increasing the electron temperature in a high power impulse magnetron sputtering discharge by using Ne as the sputtering gas. This allows for the generation of an energetic C+ ion population and a substantial increase in the C+ ion flux as compared to a conventional Ar-HiPIMS process. A direct consequence of the ionization enhancement is demonstrated by an increase in the mass density of the grown films up to 2.8 g/cm(3); the density values achieved are substantially higher than those obtained from conventional magnetron sputtering methods.
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3.
  • Brenning, Nils, et al. (författare)
  • Alfven's critical ionization velocity observed in high power impulse magnetron sputtering discharges
  • 2012
  • Ingår i: Physics of Plasmas. - : AIP Publishing. - 1070-664X .- 1089-7674. ; 19:9, s. 093505-
  • Tidskriftsartikel (refereegranskat)abstract
    • Azimuthally rotating dense plasma structures, spokes, have recently been detected in several high power impulse magnetron sputtering (HiPIMS) devices used for thin film deposition and surface treatment, and are thought to be important for plasma buildup, energizing of electrons, as well as cross-B transport of charged particles. In this work, the drift velocities of these spokes are shown to be strongly correlated with the critical ionization velocity, CIV, proposed by Alfven. It is proposed as the most promising approach in combining the CIV and HiPIMS research fields is to focus on the role of spokes in the process of electron energization.
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4.
  • Brenning, Nils, et al. (författare)
  • Spokes and charged particle transport in HiPIMS magnetrons
  • 2013
  • Ingår i: Journal of Physics D. - : IOP Publishing. - 0022-3727 .- 1361-6463. ; 46:8, s. 084005-
  • Tidskriftsartikel (refereegranskat)abstract
    • Two separate scientific communities are shown to have studied one common phenomenon, azimuthally rotating dense plasma structures, also called spokes, in pulsed-power E x B discharges, starting from quite different approaches. The first body of work is motivated by fundamental plasma science and concerns a phenomenon called the critical ionization velocity, CIV, while the other body of work is motivated by the applied plasma science of high power impulse magnetron sputtering (HiPIMS). Here we make use of this situation by applying experimental observations, and theoretical analysis, from the CIV literature to HiPIMS discharges. For a practical example, we take data from observed spokes in HiPIMS discharges and focus on their role in charged particle transport, and in electron energization. We also touch upon the closely related questions of how they channel the cross-B discharge current, how they maintain their internal potential structure and how they influence the energy spectrum of the ions? New particle-in-cell Monte Carlo collisional simulations that shed light on the azimuthal drift and expansion of the spokes are also presented.
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5.
  • Brenning, Nils, et al. (författare)
  • Understanding deposition rate loss in high power impulse magnetron sputtering : I. Ionization-driven electric fields
  • 2012
  • Ingår i: Plasma sources science & technology. - : IOP Publishing. - 0963-0252 .- 1361-6595. ; 21:2, s. 025005-
  • Tidskriftsartikel (refereegranskat)abstract
    • The lower deposition rate for high power impulse magnetron sputtering (HiPIMS) compared with direct current magnetron sputtering for the same average power is often reported as a drawback. The often invoked reason is back-attraction of ionized sputtered material to the target due to a substantial negative potential profile, sometimes called an extended presheath, from the location of ionization toward the cathode. Recent studies in HiPIMS devices, using floating-emitting and swept-Langmuir probes, show that such extended potential profiles do exist, and that the electric fields E-z directed toward the target can be strong enough to seriously reduce ion transport to the substrate. However, they also show that the potential drops involved can vary by up to an order of magnitude from case to case. There is a clear need to understand the underlying mechanisms and identify the key discharge variables that can be used for minimizing the back-attraction. We here present a combined theoretical and experimental analysis of the problem of electric fields E-z in the ionization region part of HiPIMS discharges, and their effect on the transport of ionized sputtered material. In particular, we have investigated the possibility of a 'sweet spot' in parameter space in which the back-attraction of ionized sputtered material is low. It is concluded that a sweet spot might possibly exist for some carefully optimized discharges, but probably in a rather narrow window of parameters. As a measure of how far a discharge is from such a window, a Townsend product Pi(Townsend) is proposed. A parametric analysis of Pi(Townsend) shows that the search for a sweet spot is complicated by the fact that contradictory demands appear for several of the externally controllable parameters such as high/low working gas pressure, short/long pulse length, high/low pulse power and high/low magnetic field strength.
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6.
  • Gudmundsson, J. T., et al. (författare)
  • High power impulse magnetron sputtering discharge
  • 2012
  • Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 30:3, s. 030801-
  • Forskningsöversikt (refereegranskat)abstract
    • The high power impulse magnetron sputtering (HiPIMS) discharge is a recent addition to plasma based sputtering technology. In HiPIMS, high power is applied to the magnetron target in unipolar pulses at low duty cycle and low repetition frequency while keeping the average power about 2 orders of magnitude lower than the peak power. This results in a high plasma density, and high ionization fraction of the sputtered vapor, which allows better control of the film growth by controlling the energy and direction of the deposition species. This is a significant advantage over conventional dc magnetron sputtering where the sputtered vapor consists mainly of neutral species. The HiPIMS discharge is now an established ionized physical vapor deposition technique, which is easily scalable and has been successfully introduced into various industrial applications. The authors give an overview of the development of the HiPIMS discharge, and the underlying mechanisms that dictate the discharge properties. First, an introduction to the magnetron sputtering discharge and its various configurations and modifications is given. Then the development and properties of the high power pulsed power supply are discussed, followed by an overview of the measured plasma parameters in the HiPIMS discharge, the electron energy and density, the ion energy, ion flux and plasma composition, and a discussion on the deposition rate. Finally, some of the models that have been developed to gain understanding of the discharge processes are reviewed, including the phenomenological material pathway model, and the ionization region model.
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7.
  • Hasan, Mohammad I., et al. (författare)
  • Modeling the extraction of sputtered metal from high power impulse hollow cathode discharges
  • 2013
  • Ingår i: Plasma sources science & technology. - : IOP Publishing. - 0963-0252 .- 1361-6595. ; 22:3, s. 035006-
  • Tidskriftsartikel (refereegranskat)abstract
    • High power impulse hollow cathode sputtering is studied as a means to produce high fluxes of neutral and ionized sputtered metal species. A model is constructed for the understanding and optimization of such discharges. It relates input parameters such as the geometry of the cathode, the electric pulse form and frequency, and the feed gas flow rate and pressure, to the production, ionization, temperature and extraction of the sputtered species. Examples of processes that can be quantified by the use of the model are the internal production of sputtered metal and the degree of its ionization, the speed and efficiency of out-puffing from the hollow cathode associated with the pulses, and the gas back-flow into the hollow cathode between pulses. The use of the model is exemplified with a special case where the aim is the synthesis of nanoparticles in an expansion volume that lies outside the hollow cathode itself. The goals are here a maximum extraction efficiency, and a high degree of ionization of the sputtered metal. It is demonstrated that it is possible to reach a degree of ionization above 85%, and extraction efficiencies of 3% and 17% for the neutral and ionized sputtered components, respectively.
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8.
  • Helmersson, Ulf, et al. (författare)
  • A novel pulsed high-density plasma process for nanoparticle synthesis
  • 2012
  • Ingår i: Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. - 9781466562745 ; , s. 368-370
  • Konferensbidrag (refereegranskat)abstract
    • This work presents a new technique to produce nanoparticles in a controlled manor using highly ionized plasmas that will ionize the source material [1]. The advantage of ionizing the source material is that it will increase the trapping onto negatively charged nanoparticles (NPs) that should result in a significant increase in productivity. In this work we have performed both simulations and experiments. The experiments were performed using high power impulses to generate high plasma densities. The dense plasma yields a high degree of ionization of the sputtered metal species. Solid metal cylinders of Cu, Ag, Ti and Mo were used as hollow cathodes for the synthesis of NPs. By tuning the process parameters, pulsing energy, pulsing frequency, etc., the particle size can range from of 5 nm to 700 nm in diameter.
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10.
  • Huo, Chunqing, et al. (författare)
  • Gas rarefaction and the time evolution of long high-power impulse magnetron sputtering pulses
  • 2012
  • Ingår i: Plasma sources science & technology. - : IOP Publishing. - 0963-0252 .- 1361-6595. ; 21:4, s. 045004-
  • Tidskriftsartikel (refereegranskat)abstract
    • Model studies of 400 mu s long discharge pulses in high-power impulse magnetron sputtering have been made to study the gas dynamics and plasma chemistry in this type of pulsed processing plasma. Data are taken from an experiment using square voltage pulses applied to an Al target in an Ar atmosphere at 1.8 Pa. The study is limited to low power densities, < 0.5 kW cm(-2), in which the discharge is far away from the runaway self-sputtering mode. The model used is the ionization region model, a time-dependent plasma chemistry discharge model developed for the ionization region in magnetron sputtering discharges. It gives a close fit to the discharge current during the whole pulse, both an initial high-current transient and a later plateau value of constant lower current. The discharge current peak is found to precede a maximum in gas rarefaction of the order of Delta n(Ar)/n(Ar),(0) approximate to 50%. The time durations of the high-current transient, and of the rarefaction maximum, are determined by the time it takes to establish a steady-state diffusional refill of process gas from the surrounding volume. The dominating mechanism for gas rarefaction is ionization losses, with only about 30% due to the sputter wind kick-out process. During the high-current transient, the degree of sputtered metal ionization reaches 65-75%, and then drops to 30-35% in the plateau phase. The degree of self-sputtering (defined here as the metal ion fraction of the total ion current to the target) also varies during the pulse. It grows from zero at pulse start to a maximum of 65-70% coinciding in time with the maximum gas rarefaction, and then stabilizes in the range 40-45% during the plateau phase. The loss in deposition rate that can be attributed to the back-attraction of the ionized sputtered species is also estimated from the model. It is low during the initial 10-20 mu s, peaks around 60% during the high-current transient, and finally stabilizes around 30% during the plateau phase.
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