| 1. |
- Paskov, Plamen, 1959-, et al.
(author)
-
Anisotropy of the free exciton emission in GaN grown on a-plane sapphire
- 2002
-
In: Physica status solidi. A, Applied research. - 0031-8965 .- 1521-396X. ; 190:1, s. 75-79
-
Journal article (peer-reviewed)abstract
- The influence of the anisotropic in-plane strain on the optical response of GaN layers grown on a-plane sapphire is investigated. A splitting of the G5 states of the A and B free excitons into two components, polarized parallel and perpendicular to the strain direction, is observed. The experimental results are discussed in the framework of the effective exciton Hamiltonian formalism.
|
|
| 2. |
- Paskov, Plamen, 1959-, et al.
(author)
-
Anisotropy of the in-plane strain in GaN grown on A-plane sapphire
- 2002
-
In: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 234:3, s. 892-896
-
Journal article (peer-reviewed)abstract
- A comparative study of GaN layer grown by hydride vapour phase epitaxy on A-plane sapphire before and after removal of the substrate is presented. A large anisotropy of the in-plane strain in the as-grown sample is revealed by X-ray diffraction measurements and polarized photoluminescence. The strain anisotropy is found to modify the selection rules for the transitions leading to a splitting of the optically active states of the A and B excitons. Almost complete strain relaxation and recovery of the optical isotropy in the (0001) plane is observed in the free-standing layer.
|
|
| 3. |
- Paskov, Plamen, 1959-, et al.
(author)
-
Internal structure of free excitons in GaN
- 2001
-
In: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 228:2, s. 467-470
-
Journal article (peer-reviewed)abstract
- Polarized photoluminescence is used to study the fine structure of free excitons in thick GaN layers grown on differently oriented sapphire substrates. The singlet-triplet splitting of the A exciton is measured and the exchange interaction constant in GaN is determined. For the samples grown on the a-plane sapphire, splitting of the A and B excitons induced by the uniaxial in-plane stress is also observed.
|
|
| 4. |
|
|
