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- Paskov, Plamen, 1959-, et al.
(författare)
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Anisotropy of the free exciton emission in GaN grown on a-plane sapphire
- 2002
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Ingår i: Physica status solidi. A, Applied research. - 0031-8965 .- 1521-396X. ; 190:1, s. 75-79
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Tidskriftsartikel (refereegranskat)abstract
- The influence of the anisotropic in-plane strain on the optical response of GaN layers grown on a-plane sapphire is investigated. A splitting of the G5 states of the A and B free excitons into two components, polarized parallel and perpendicular to the strain direction, is observed. The experimental results are discussed in the framework of the effective exciton Hamiltonian formalism.
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