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Sökning: swepub > Chalmers tekniska högskola > (1990-1999) > Kollberg Erik 1937

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  • Dillner, Lars, 1968, et al. (författare)
  • Analysis of Symmetric Varactor Frequency Multipliers
  • 1997
  • Ingår i: Microwave and Optical Technology Letters. ; 15:1, s. 26-29
  • Tidskriftsartikel (refereegranskat)abstract
    • We investigate efficiency limitations of frequency multipliers with the use of a simple model for symmetric varactors. Our calculations show that the conversion efficiency is improved for a C(V) shape with large nonlinearity at zero volt bias. For quintuplers, the optimal embedding impedance at the third harmonic is an inductance in resonance with the varactor diode capacitance.
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  • Fu, Ying, 1964, et al. (författare)
  • AlGaAs/GaAs and InAlAs/InGaAs Heterostructure Barrier Varactors
  • 1997
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 82:11, s. 5568-5572
  • Tidskriftsartikel (refereegranskat)abstract
    • By the Schrödinger and Poisson equations, we have theoretically investigated AlGaAs/GaAs and InAlAs/InGaAs single barrier varactors. The energy band structure, carrier distribution, and conduction current are fully exploited for varactor design. We have explained the experimental current-voltage and capacitance-voltage measurements very well. A simple analytical model for energy band structure is derived based on the Schrödinger and Poisson equation calculation. It is found that a barrier structure of 3 nm Al0.3Ga0.7As/3 nm AlAs/3nm Al0.3Ga0.7As for an Al0.3Ga0.7As/GaAs varactor and a barrier structure of 8 nm In0.52Al0.48As/3 nm AlAs/8 nm In0.52Al0.48As for In0.52Al0.48As/In0.47GaAs are optimal for minimal conduction currents.
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  • Fu, Ying, 1964, et al. (författare)
  • Capacitance Analysis for AlGaAs/GaAs and InAlAs/InGaAs Heterostructure Barrier Varactor Diodes
  • 1998
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 83:3, s. 1457-1462
  • Tidskriftsartikel (refereegranskat)abstract
    • By self-consistently solving Schro¨dinger and Poissons equations, we have investigated the capacitances of AlGaAs/GaAs and InAlAs/InGaAs heterostructure barrier varactors. When compared with semiclassical particle model, quantum mechanics show that the maximal capacitance of the varactor is saturated when the spacer and barrier are thin. When the spacer and barrier are very thick, both the quantum mechanics and semiconductor particle approach result in the same conclusion, namely, the maximal capacitance is inversely proportional to the sum of the spacer and barrier thicknesses. We have also shown that the maximal capacitance increases for high carrier effective mass.
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  • Gevorgian, Spartak, 1948, et al. (författare)
  • CAD models for multilayered substrate interdigital capacitors
  • 1996
  • Ingår i: IEEE Transactions on Microwave Theory and Techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 44:6, s. 896 - 904
  • Tidskriftsartikel (refereegranskat)abstract
    • Conformal mapping-based models are given for interdigital capacitors on substrates with a thin superstrate and/or covering dielectric film. The models are useful for a wide range of dielectric constants and layer thicknesses. Capacitors with finger numbers n⩾2 are discussed. The finger widths and spacing between them may be different. The results are compared with the available data and some examples are given to demonstrate the potential of the models
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