131. |
- Raeissi, Bahman, 1979, et al.
(författare)
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Relation between Electrical and Mechanical Characteristics of Low-Temperature Bonded Si/Si Interfaces
- 2006
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Ingår i: Proceeding of 210th ECS Meeting, Semiconductor Wafer Bonding 9: Science, Technology, and Applications, Vol. 3, No .6. - : The Electrochemical Society. ; 3:6, s. 217-226
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Tidskriftsartikel (refereegranskat)abstract
- The bonding energy of low-temperature plasma bonded silicon-silicon interfaces is correlated with their electrical properties. From current versus voltage and capacitance versus voltage data, mobile ion charges are shown to play a considerable role for the bond force. By comparing the evolution of the bonding strength during the first 48 hours after bonding with that of ionic charge in the interlayer and interface electron state concentrations, we demonstrate a relation between these quantities for low temperature plasma bonded silicon surfaces. The results suggest that mobile ions in an interfacial layer change the charge distribution, resistance, capacitance, interface state density distributions and correlate with the bonding energy of the silicon-silicon junction.
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132. |
- Raeissi, Bahman, 1979, et al.
(författare)
-
The Role of Mobile Charge in Oxygen Plasma-Enhanced Silicon-to-Silicon Wafer Bonding
- 2010
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Ingår i: Electrochemical and Solid-State Letters. - : The Electrochemical Society. - 1099-0062. ; 13:6, s. H179-H181
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Tidskriftsartikel (refereegranskat)abstract
- Mechanical bonding energies of oxygen plasma treated and room-temperature wafer bonded silicon surfaces have been measured as a function of storage time in parallel with measurements of electrical interface properties. The surface energy increases with time dependence similar to that of decreasing interface state concentration. The current vs voltage behavior reveals the existence of mobile ions. We suggest that these mobile charges, after the reaction with the interface states, give rise to the increased surface energy responsible for bonding.
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133. |
- Raeissi, Bahman, 1979, et al.
(författare)
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Wafer bonding strength increased by mobile ions
- 2009
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Ingår i: Proceeding of EUROSOI 2009. ; , s. 99-100
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Konferensbidrag (refereegranskat)abstract
- Mechanical bonding energies of oxygen plasma treated androom temperature wafer bonded silicon surfaces have beenmeasured as a function of storage time in parallel withmeasurements of electrical interface properties. We find that the surface energy increases with a time dependence similar to that of decreasing interface state concentration. The current versus voltage behaviour reveals the existence of mobile ions. We conclude that these mobile charges after reaction with the interface states give rise to the increased surface energy responsible for the bonding.
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134. |
- Stake, Jan, 1971, et al.
(författare)
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Graphene Millimeter Wave Electronics
- 2011
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Ingår i: 6th ESA Workshop on Millimetre-Wave Technology and Applications and 4th Global Symposium on Millimeter Waves.
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Konferensbidrag (refereegranskat)abstract
- We report on the development of graphene based transistors and circuits for millimeter wave applications.
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135. |
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136. |
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