231. |
- Bellas, Juan, et al.
(författare)
-
Monitoring of organic compounds and trace metals during a dredging episode in the Gota Alv Estuary (SW Sweden) using caged mussels
- 2007
-
Ingår i: Water Air and Soil Pollution. - : Springer Science and Business Media LLC. - 0049-6979 .- 1573-2932. ; 181:1-4, s. 265-279
-
Tidskriftsartikel (refereegranskat)abstract
- The concentrations of selected trace metals, organotins, polychlorinated biphenyls (PCBs), and polycyclic aromatic hydrocarbons (PAHs) were determined in caged blue mussels (Mytilus edulis) during dredging operations in the Gota Alv Estuary (SW Sweden). Maximum values of pollutants in mussel tissues were found after the dredging started. Our results showed that the dredging caused mobilization of organotins from the sediments to the water column during the experimental period. Multidimensional scaling (MDS) and cluster analysis were applied to compare and establish relationships between levels of pollutants in mussels and sampling sites during the experimental period. In order to evaluate the biological effects of contaminants, genotoxic damage was measured using the Comet assay, and its potential application for environmental monitoring is discussed.
|
|
232. |
- Belotcerkovtceva, Daria, et al.
(författare)
-
Insights and Implications of Intricate Surface Charge Transfer and sp3-Defects in Graphene/Metal Oxide Interfaces
- 2022
-
Ingår i: ACS Applied Materials and Interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 14:31, s. 36209-36216
-
Tidskriftsartikel (refereegranskat)abstract
- Adherence of metal oxides to graphene is of fundamental significance to graphene nanoelectronic and spintronic interfaces. Titanium oxide and aluminum oxide are two widely used tunnel barriers in such devices, which offer optimum interface resistance and distinct interface conditions that govern transport parameters and device performance. Here, we reveal a fundamental difference in how these metal oxides interface with graphene through electrical transport measurements and Raman and photoelectron spectroscopies, combined with ab initio electronic structure calculations of such interfaces. While both oxide layers cause surface charge transfer induced p-type doping in graphene, in sharp contrast to TiOx, the AlOx/graphene interface shows the presence of appreciable sp3 defects. Electronic structure calculations disclose that significant p-type doping occurs due to a combination of sp3 bonds formed between C and O atoms at the interface and possible slightly off-stoichiometric defects of the aluminum oxide layer. Furthermore, the sp3 hybridization at the AlOx/graphene interface leads to distinct magnetic moments of unsaturated bonds, which not only explicates the widely observed low spin-lifetimes in AlOx barrier graphene spintronic devices but also suggests possibilities for new hybrid resistive switching and spin valves.
|
|
233. |
- Berggren, Ann-Marie, 1969-, et al.
(författare)
-
A 600-year annual 10Be record from the NGRIP ice core, Greenland
- 2009
-
Ingår i: Geophysical Research Letters. - 0094-8276 .- 1944-8007. ; 36, s. L11801-
-
Tidskriftsartikel (refereegranskat)abstract
- Despite the extensive use of 10Be as the most significant information source on past solar activity, there has been only one record (Dye-3, Greenland) providing annual resolution over several centuries. Here we report a new annual resolution 10Be record spanning the period 1389-1994 AD, measured in an ice core from the NGRIP site in Greenland. NGRIP and Dye-3 10Be exhibits similar long-term variability, although occasional short term differences between the two sites indicate that at least two high resolution 10Be records are needed to assess local variations and to confidently reconstruct past solar activity. A comparison with sunspot and neutron records confirms that ice core 10Be reflects solar Schwabe cycle variations, and continued 10Be variability suggests cyclic solar activity throughout the Maunder and Spörer grand solar activity minima. Recent 10Be values are low; however, they do not indicate unusually high recent solar activity compared to the last 600 years.
|
|
234. |
- Berggren, David, et al.
(författare)
-
Förnyelselagen - möjlighet eller hot?
- 2018
-
Ingår i: Samhällsbyggaren. - Stockholm : Samhällsbyggarna Sverige AB. - 2000-2408. ; 27 maj:2, s. 38-39
-
Tidskriftsartikel (populärvet., debatt m.m.)abstract
- Riksdagen har beslutat att avtalsrättigheter som skrivits in i det statliga Lantmäteriets fastighetsregister före den 1 juli 1968 kommer att tas bort ur registret om inte rättighetshavaren senast den 31 december 2018 anmäler till Lantmäteriet att den ska finnas kvar. Hur arbetar rättighetshavare med förnyelsekravet och vad kan förnyelsekravet väntas få för konsekvenser?
|
|
235. |
|
|
236. |
|
|
237. |
- Berggren, Erik, 1963-, et al.
(författare)
-
Valfusk och Äppelpaj
- 2000
-
Ingår i: Dagens Nyheter. - 1101-2447. ; 12:12
-
Recension (populärvet., debatt m.m.)
|
|
238. |
|
|
239. |
- Berggren, Karl-Fredrik, et al.
(författare)
-
New directions with fewer dimensions
- 2002
-
Ingår i: Physics world. - 0953-8585 .- 2058-7058. ; 15:10, s. 37-42
-
Tidskriftsartikel (refereegranskat)
|
|
240. |
- Berggren, Karl-Fredrik, et al.
(författare)
-
On the role of electron exchange and correlation in semiconductor quantum dots
- 2001
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 12:4, s. 529-532
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Spontaneous magnetization of single and coupled quantum dots formed by lateral confinement of a high-mobility two-dimensional electron gas is studied for a realistic GaAs/AlGaAs heterostructure. The modelling of the device takes into account contributions from a patterned gate, doping, surface states, and mirror charges. To explore the magnetic properties we use the Kohn-Sham local spin-density formalism including the contributions from electron correlation and exchange. We show by explicit calculations that the exchange is the dominant mechanism driving a spontaneous magnetization of a dot. The correlation potential reduces the amount of level splitting and usually affects the electron content in the dot at a given gate voltage. These effects are, however, small and may be neglected under present circumstances. Single dots with up to 50 electrons have been studied.
|
|