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Träfflista för sökning "WFRF:(Engström Olof 1943 ) "

Sökning: WFRF:(Engström Olof 1943 )

  • Resultat 51-60 av 136
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51.
  • Engström, Olof, 1943 (författare)
  • Limitations in future high-k materials
  • 2009
  • Ingår i: NANOSIL Workshop at ESSDERC, Athens, Sept. 14 - 18, 2009 (Invited).
  • Konferensbidrag (refereegranskat)
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52.
  • Engström, Olof, 1943, et al. (författare)
  • Multiparameter admittance spectroscopy (Invited)
  • 2010
  • Ingår i: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. - 9781566778220 ; 35:3, s. 257-265
  • Konferensbidrag (refereegranskat)abstract
    • Multiparameter admittance spectroscopy is described for investigating interface state properties of metal-oxide-semiconductor structures. In the conductance mode of this method, it allows for obtaining three-dimensional or contour plots of conductance data which reveal the mechanisms for capture of charge carriers into the interface states.
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53.
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55.
  • Engström, Olof, 1943, et al. (författare)
  • Navigation aids in the search for future high-k dielectrics: physical and electrical trends
  • 2006
  • Ingår i: Proceeding of 7th European Workshop on Ultimate Integration of Silicon (ULIS 2006), p.115-118, April 20-21, Grenoble, France (2006).. ; , s. 115-118
  • Tidskriftsartikel (refereegranskat)abstract
    • From experimental literature data on metal oxides combinedwith theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.
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56.
  • Engström, Olof, 1943, et al. (författare)
  • Novel high-k/metal gate materials
  • 2007
  • Ingår i: SiNANO Worksshop at ESSDERC 07, Munich.
  • Konferensbidrag (refereegranskat)
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57.
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58.
  • Engström, Olof, 1943 (författare)
  • Physical trends of High-k oxides
  • 2012
  • Ingår i: Tutorial at 23rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2012) October 1 - 5, 2012 Cagliari, Italy.
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • The properties of rare-earth and transition metal oxides of interest for the development of future silicon nanoelectronics will be reviewed. As an introduction, the motivation for using high-k insulators for MOSFET applications will be given together with a basic enlightenment on two crucial intrinsic properties of gate insulators: the dielectric constant, k, and the energy offset value, ∆E, in relation to silicon. It will be demonstrated how these quantities govern initial navigation along metals in the periodic system to find future oxide candidates with feasible leakage characteristics. An overview will be included on the restraining influence of lower-k interlayers, interface states and oxide traps together with a critical survey of existing characterization methods for crucial quantities. Chemical properties like reactivity, structural stability and hygroscopic qualities of interesting oxides will be treated together with reliability issues. Finally, the future challenge of keeping up gate insulator development with the perspectives of the ITRS roadmap will be discussed.
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59.
  • Engström, Olof, 1943, et al. (författare)
  • Properties of Metal/High-k Oxide/Graphene Structures
  • 2017
  • Ingår i: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. ; 80:1, s. 157-176
  • Konferensbidrag (refereegranskat)abstract
    • The challenge of interpreting experimental data from capacitance versus voltage (C-V) measurements on metal/high-k oxide/graphene (MOG) structures is discussed. Theoretical expressions for the influence of interface states, bulk oxide traps, measurement frequency, temperature and puddles are derived and compared with experiments. The nature of oxide traps and their impact on C-V data is treated especially from the view of electron-lattice interaction at electron emission and capture and possible performance as border traps, resembling interface states. We find that characterization on detailed physical origins leading to effects on C-V data is a more complicated issue than the corresponding analysis of metal/oxide/semiconductor (MOS) structures.
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  • Resultat 51-60 av 136
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Engström, Olof, 1943 (130)
Raeissi, Bahman, 197 ... (33)
Bengtsson, Stefan, 1 ... (19)
Hall, S. (19)
Kaczmarczyk, M (19)
Gottlob, H. D. B. (18)
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Cherkaoui, K. (15)
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Lemme, Max C., 1970- (6)
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Karmous, A. (6)
Surma, B (6)
Buiu, O. (6)
Fu, Ying, 1964- (6)
Persson, Lars-Olof, ... (5)
Larsson, Sven, 1943 (5)
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