| 541. |
- Suyatin, Dmitry, et al.
(författare)
-
Nanowire-Based Electrode for Acute In Vivo Neural Recordings in the Brain
- 2013
-
Ingår i: PLoS ONE. - : Public Library of Science (PLoS). - 1932-6203. ; 8:2
-
Tidskriftsartikel (refereegranskat)abstract
- We present an electrode, based on structurally controlled nanowires, as a first step towards developing a useful nanostructured device for neurophysiological measurements in vivo. The sensing part of the electrode is made of a metal film deposited on top of an array of epitaxially grown gallium phosphide nanowires. We achieved the first functional testing of the nanowire-based electrode by performing acute in vivo recordings in the rat cerebral cortex and withstanding multiple brain implantations. Due to the controllable geometry of the nanowires, this type of electrode can be used as a model system for further analysis of the functional properties of nanostructured neuronal interfaces in vivo.
|
|
| 542. |
|
|
| 543. |
|
|
| 544. |
- Suyatin, Dmitry, et al.
(författare)
-
Properties of electrical contacts to filamentary nanocrystals
- 2007
-
Ingår i: Vestnik Voronezskogo Gosudarstvennogo Tehnicheskogo Universiteta. ; 3:11, s. 67-70
-
Tidskriftsartikel (refereegranskat)abstract
- We investigated properties of electrical contacts to filamentary nanocrystals based on InAs, synthesized by chemical-beam epitaxy. Robust, low resistive Ohmic contacts were manufactured to InAs segment of filamentary nanocrystals both directly and indirectly, through a catalytic particle at the top of nanocrystals. Current-voltage characteristics and degradation characteristics of devices based on InAs nanocrystals with electrical contacts are presented. It was determined, that properties of electrical contacts to nanocrystals can be improved by excluding natural oxide layer on the interface between metal and nanocrystal material.
|
|
| 545. |
- Suyatin, Dmitry, et al.
(författare)
-
Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning
- 2014
-
Ingår i: Nature Communications. - London : Springer Science and Business Media LLC. - 2041-1723. ; 5
-
Tidskriftsartikel (refereegranskat)abstract
- Nanoscale contacts between metals and semiconductors are critical for further downscaling of electronic and optoelectronic devices. However, realizing nanocontacts poses significant challenges since conventional approaches to achieve ohmic contacts through Schottky barrier suppression are often inadequate. Here we report the realization and characterization of low n-type Schottky barriers (~0.35 eV) formed at epitaxial contacts between Au-In alloy catalytic particles and GaAs-nanowires. In comparison to previous studies, our detailed characterization, employing selective electrical contacts defined by high-precision electron beam lithography, reveals the barrier to occur directly and solely at the abrupt interface between the catalyst and nanowire. We attribute this lowest-to-date-reported Schottky barrier to a reduced density of pinning states (~1017 m−2) and the formation of an electric dipole layer at the epitaxial contacts. The insight into the physical mechanisms behind the observed low-energy Schottky barrier may guide future efforts to engineer abrupt nanoscale electrical contacts with tailored electrical properties.
|
|
| 546. |
|
|
| 547. |
- Suyatin, Dmitry, et al.
(författare)
-
Sulfur passivation for ohmic contact formation to InAs nanowires
- 2007
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 18:10
-
Tidskriftsartikel (refereegranskat)abstract
- We have studied the formation of ohmic contacts to InAs nanowires by chemical etching and passivation of the contact areas in an ammonium polysulfide, (NH4)(2)S-x, water solution. The nanowires were exposed to different dilution levels of the (NH4)(2)Sx solution before contact metal evaporation. A process based on a highly diluted ( NH4)S-2(x) solution was found to be self-terminating, with minimal etching of the InAs. The stability of the contacts was investigated with electrical measurements as a function of storage time in vacuum and air.
|
|
| 548. |
- Svensson, CPT, et al.
(författare)
-
Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications
- 2005
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 16:6, s. 936-939
-
Tidskriftsartikel (refereegranskat)abstract
- We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH3 to AsH3 flow ratios during growth of the GaAs1-xPx segment, we are able to control the composition of the segment, making it feasible to tune the wavelength of the emitted light. A photoluminescence system was employed to characterize the luminescence, and x-ray energy dispersive spectrometry and x-ray diffraction studies were used to investigate the composition of the segment. These double heterostructure nanowires could in the future be used in optoelectronic devices and as multi pie-wavelength fluorescent markers for biomedical applications.
|
|
| 549. |
- Svensson, C Patrik T, et al.
(författare)
-
Monolithic GaAs/InGaP nanowire light emitting diodes on silicon
- 2008
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 19:30, s. 6-305201
-
Tidskriftsartikel (refereegranskat)abstract
- Vertical light emitting diodes (LEDs) based on GaAs/InGaP core/shell nanowires, epitaxially grown on GaP and Si substrates, have been fabricated. The devices can be fabricated over large areas and can be precisely positioned on the substrates, by the use of standard lithography techniques, enabling applications such as on-chip optical communication. LED functionality was established on both kinds of substrate, and the devices were evaluated in terms of temperature-dependent photoluminescence and electroluminescence.
|
|
| 550. |
- Thelander, Claes, et al.
(författare)
-
AFM manipulation of carbon nanotubes: realization of ultra-fine nanoelectrodes
- 2002
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 13:1, s. 108-113
-
Tidskriftsartikel (refereegranskat)abstract
- We have investigated the possibility of using carbon nanotubes as flexible, mobile electrical probes able to electrically contact nanometre- scaled objects. Configurations with metal electrodes evaporated on top of multi-, few- and single-wall carbon nanotubes have been studied. Scanning probe manipulation was used to create nano-mechanical switches by first cutting the various tubes, and then moving the parts back into electrical contact. We found multiwall tubes to be best suited as mobile probes, mainly due to their insensitivity to mechanical deformation. Finally, we present an example where the scanning probe manipulation technique has been used to electrically connect two carbon nanotubes to a 7 nm gold particle.
|
|
