| 11. |
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| 12. |
- Modh, Peter, 1968, et al.
(författare)
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Linear Cascade VCSEL Arrays With High Differential Efficiency and Low Differential Resistance
- 2006
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Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 18:1, s. 100-102
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Tidskriftsartikel (refereegranskat)abstract
- We have fabricated monolithic linear cascade ver- tical-cavity surface-emitting laser (VCSEL) arrays intended for low loss fiber-optic radio-frequency links. Arrays with up to four VCSELs connected in series, with a spacing of 250 m, were fab- ricated on an insulating substrate. A thick layer of BCB was used to facilitate series connection through contact metallization and enable high frequency operation. The threshold current is 0.6 mA, independent of the number of VCSELs in the array. Differential efficiency, maximum output power, voltage, and differential re- sistance scale linearly with the number of VCSELs. For a four VCSEL array, we achieve a high differential efficiency of 160%, a maximum output power of 24 mW, and a low differential resis- tance of 220 . Basic link measurements, using a series connected VCSEL array, a parallel fiber ribbon, and a parallel connected detector array revealed a differential current gain exceeding unity in the low frequency limit.
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| 13. |
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| 14. |
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| 15. |
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| 16. |
- Söderberg, Emma, 1980, et al.
(författare)
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Suppression of higher order transverse modes and oxide modes in 1.3 µm InGaAs VCSELs by an inverted surface relief
- 2007
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Ingår i: IEEE Photonics Technology Letters. ; 19, s. 327-
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Tidskriftsartikel (refereegranskat)abstract
- It is shown, by a systematic variation of design parameters, that the use of an inverted surface relief is very effective for suppressing higher order transverse modes in oxide confined 1.3-mum InGaAs vertical-cavity surface-emitting lasers (VCSELs). Single-mode emission is achieved for a large variety of oxide aperture and surface relief diameters, with optimum designs, having a surface relief with a diameter half of that of the oxide aperture, producing 1.1-1.3 mW of single-mode power. It is also shown that the anti-phase layer employed to enable the use of an inverted surface relief is effective for suppressing oxide modes that otherwise appear in oxide confined VCSELs with a large detuning between the gain peak and the cavity resonance
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| 17. |
- Wang, Shu Min, 1963, et al.
(författare)
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Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE
- 2011
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Ingår i: Physica Status Solidi (B): Basic Research. - : Wiley. - 1521-3951 .- 0370-1972. ; 248:5, s. 1207-1211
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we report recent progresses on growth of dilute nitrides and 1.3 mu m lasers on GaAs using molecular beam epitaxy at Chalmers University of Technology, Sweden. Intense long wavelength light emission up to 1.71 mu m at room temperature has been achieved by using the N irradiation method and the low growth rate. It is also demonstrated that incorporation of N in relaxed InGaAs buffer grown on GaAs strongly enhances the optical quality of metamorphic InGaAs quantum wells. With the optimized growth conditions and the laser structures, we demonstrate 1.3 mu m GaInNAs edge emitting lasers on GaAs with state-of-the-art performances including a low threshold current density, a high-characteristic temperature, a 3 dB bandwidth of 17 GHz and uncooled operation at 10 Gbit/s up to 110 degrees C. The laser performances are comparable with the best reported data from the InGaAsP lasers on InP and is superior to the InAs quantum dot lasers on GaAs.
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