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| 2. |
- Abdalla, Munir A, et al.
(författare)
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A CMOS APS for dental X-ray imaging using scintillating sensors
- 2001
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Ingår i: Nuclear Instruments and Methods in Physics Research Section A. - 0168-9002 .- 1872-9576. ; 460:1, s. 197-203
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Tidskriftsartikel (refereegranskat)abstract
- In this paper we present an integrating CMOS Active Pixel Sensor (APS) circuit to be used with scintillator type X-ray sensors for intra oral dental X-ray imaging systems. Different pixel architectures were constructed to explore their performance characteristics and to study the feasibility of the development of such systems using the CMOS technology. A prototype 64 x 80 pixel array has been implemented in a CMOS 0.8 mum double poly n-well process with a pixel pitch of 50 mum. A spectral sensitivity measurement for the different pixels topologies, as well as measured X-ray direct absorption in the different APSs are presented. A measurement of the output signal showed a good linearity over a wide dynamic range. This chip showed that the very low sensitivity of the CMOS APSs to direct X-ray exposure adds a great advantage to the various CMOS advantages over CCD-based imaging systems,
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| 3. |
- Abdalla, Munir A, et al.
(författare)
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A new biasing method for CMOS preamplifier-shapers
- 2000
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Ingår i: ICECS 2000: 7TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS & SYSTEMS, VOLS I AND II. ; , s. 15-18
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Konferensbidrag (refereegranskat)
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| 4. |
- Abdalla, Munir A, et al.
(författare)
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An integrating CMOS APS for X-ray imaging with an in-pixel preamplifier
- 2001
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Ingår i: Nuclear Instruments and Methods in Physics Research Section A. - 0168-9002 .- 1872-9576. ; 466:1, s. 232-236
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Tidskriftsartikel (refereegranskat)abstract
- We present in this paper an integrating CMOS Active Pixel Sensor (APS) circuit coated with scintillator type sensors for intra-oral dental X-ray imaging systems. The photosensing element in the pixel is formed by the p-diffusion on the n-well diode. The advantage of this photosensor is its very low direct absorption of X-rays compared to the other available photosensing elements in the CMOS pixel. The pixel features an integrating capacitor in the feedback loop of a preamplifier of a finite gain in order to increase the optical sensitivity. To verify the effectiveness of this in-pixel preamplification, a prototype 32 x 80 element CMOS active pixel array was implemented in a 0.8 mum CMOS double poly, n-well process with a pixel pitch of 50 mum. Measured results confirmed the improved optical sensitivity performance of the APS. Various measurements on device performance are presented.
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| 6. |
- Aboelfotoh, M. O., et al.
(författare)
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Schottky-barrier behavior of metals on n- and p-type 6H-SiC
- 2003
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 67:7, s. 075312-
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Tidskriftsartikel (refereegranskat)abstract
- The Schottky-barrier height of a number of metals (Ti, Ni, Cu, and Au) on n- and p-type Si-terminated 6H-SiC has been measured in the temperature range 150-500 K. It is found that the barrier height to n-type 6H-SiC does not exhibit a temperature dependence, while for p-type 6H-SiC the change in the barrier height with temperature follows very closely the change in the indirect energy gap in 6H-SiC. These results are inconsistent with models of Schottky-barrier formation based on the concept of a charge neutrality level. Furthermore, the present results cannot be reconciled with a defect pinning mechanism, contrary to the conclusions of earlier studies on III-V compound semiconductors. We suggest that chemical bonding at the metal-semiconductor interface plays an important role in determining the Schottky-barrier height.
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| 7. |
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| 8. |
- Abrashev, M. V., et al.
(författare)
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Raman spectroscopy of CaMnO(3) : Mode assignment and relationship between Raman line intensities and structural distortions
- 2002
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 65:18, s. 1-9
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Tidskriftsartikel (refereegranskat)abstract
- Polarized Raman spectra of oriented finely twinned CaMnO(3) thin films and nonpolarized Raman spectra of CaMnO(3) ceramics were studied at room temperature using several excitation laser wavelengths. The selection rules for the polarized Raman spectra, obtained from samples consisting of finely twinned orthorhombic domains, were calculated and the symmetry of all observed Raman lines was determined. The relationship between the intensity of the Raman lines and the distortions in the ABO(3) perovskites with GdFeO(3)-type structure is discussed. These distortions can be described as superposition of four simple basic distortions: two MnO(6) octahedral tilts, Jahn-Teller deformation of Mn(3+) O(6) octahedra, and shift of the A ions from their sites in the ideal perovskite. Twenty of the 24 Raman-allowed modes in the real GdFeO(3)-type structure have counterparts in only one of the four simpler structures, obtained by a single basic distortion. The assignment of the Raman lines of CaMnO(3) to definite atomic vibrations, most of them activated by a single basic distortion, was made in close comparison with the results of lattice dynamical calculations and the Raman spectra of isostructural LaMnO(3) and CaGeO(3).
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| 9. |
- Abrashev, M. V., et al.
(författare)
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Raman spectroscopy of the charge- and orbital-ordered state in La0.5Ca0.5MnO3
- 2001
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Ingår i: Physical Review B. ; 64:14
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Tidskriftsartikel (refereegranskat)abstract
- Polarized Raman spectra from microcrystals of La0.5Ca0.5MnO3 were studied as a function of temperature, excitation photon energy, and scattering configuration. At temperatures below the transition from ferromagnetic metallic phase to antiferromagnetic insulating charge- and orbital-ordered (COO) phase, several lines appear in Raman spectra excited with photon energies (h) over bar omega (L)<2.5 eV. We argue that their appearance signals ordering and freezing of the Jahn-Teller distortions at this transition temperature into a superstructure with a doubled elementary cell. We suggest a simplified structural model based on an analysis of the normal phonon modes in the COO phase, neglecting the octahedral tilts and containing ordered Mn4+O6 (undistorted) and Mn3+O6 (Jahn-Teller distorted) octahedra. The symmetries of the experimentally observed Raman lines are determined by comparing their relative intensities to those predicted by the polarization selection rules for a finely twinned quasicubic crystal. The most intensive Raman lines are assigned to definite normal modes in close comparison with corresponding modes in COO layered manganites and undoped RMnO3 (R=La, Y).
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| 10. |
- Acx, A. G., et al.
(författare)
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Radio Resource Management
- 2000
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Ingår i: Third generation mobile communication systems. - Boston, Mass : Artech House. - 1580530826 ; , s. 386-
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Bokkapitel (övrigt vetenskapligt/konstnärligt)
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