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Träfflista för sökning "WFRF:(Lu W) srt2:(2000-2004)"

Sökning: WFRF:(Lu W) > (2000-2004)

  • Resultat 11-20 av 23
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11.
  • Fu, Ying, 1964, et al. (författare)
  • Quantum well infrared detectors
  • 2004
  • Ingår i: Encyclopedia of Nanoscience and Nanotechnology, ed. by H.S. Nalwa. - 1588830659 ; 9, s. 179-97
  • Bokkapitel (övrigt vetenskapligt/konstnärligt)
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12.
  • Jiang, Jun, et al. (författare)
  • Length dependence of coherent electron transportation in metal-alkanedithiol-metal and metal-alkanemonothiol-metal junctions
  • 2004
  • Ingår i: Chemical Physics Letters. - : Elsevier BV. - 0009-2614 .- 1873-4448. ; 400:4-6, s. 336-340
  • Tidskriftsartikel (refereegranskat)abstract
    • We have applied the elastic-scattering Green's function theory to study the coherent electron transportation processes in both metal-alkanedithiol-metal (gold-[S(CH2)(n)S]-gold, n = 8-14) and metal-alkanemonothiol-metal (gold-[H(CH2)(n)S]-gold, n = 814) at the hybrid density functional theory level. It is shown that the current decreases exponentially with the molecular length. At the low temperature limit the electron decay rate, beta, for alkanedithiol junction is found to be around 0.30/CH2 at 1.0 V bias, much smaller than the calculated value of 0.60/CH2 for alkanemonothiol junction. The decay rate for alkanedithiol junction at the room temperature is neither sensitive to the activation of the Au-S stretching vibrational mode nor to the external bias. The calculated current-voltage characteristics and decay rates for both junctions are in excellent agreement with the corresponding experimental results.
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15.
  • Li, Z-F, et al. (författare)
  • Determination of carrier-transfer length from side-wall quantum well to quantum wire by micro-photoluminescence scanning
  • 2003
  • Ingår i: Journal of Electronic Materials. - : Springer Science Business Media. - 0361-5235 .- 1543-186X. ; 32:8, s. 913-916
  • Tidskriftsartikel (refereegranskat)abstract
    • Micro-photoluminescence (mu-PL) line scanning across a single V-groove, GaAs/AlGaAs quantum wire (QWR) has been performed at room temperature, revealing a clear spatial-dependence of the PL. After fitting each PL spectrum by multi-Gaussian line shapes, intensity profiles of each PL component from confined structures have been obtained as functions of the scanning position. The PL quenching of a side-wall quantum well (SQWL) has been recognized in a certain area in the vicinity of the QWR and is interpreted by carrier transfer into the QWR within effective transfer length. By simulating the carrier-transfer process from SQWL to QWR as a convolution of a step function for carrier distribution and a Gaussian function for exciting laser irradiance, the effective transfer length of about 1.8+/-0.3 mum has, therefore, been concluded.
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17.
  • Lu, W., et al. (författare)
  • Application of combinatorial material chip method on the improvement of quantum dots emission efficiency
  • 2004
  • Ingår i: Proceedings of the SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 5277:1, s. 99-108
  • Konferensbidrag (refereegranskat)abstract
    • The combinatorial material chip method has been used to study the emission efficiency of InAs/GaAs quantum dots. The photoluminescence spectroscopy is performed to obtain the rule of emission efficiency on the proton implantation dose. A pronounced enhancement of room temperature emission efficiency has been obtained by the optimized quantum dots process condition. The increment of emission efficiency up to 80 itmes has been observed. This effect may be resulted from both the proton passivation and carrier capture enhancement effects. The maximum photoluminescence peak shift is about 23 meV resulted from the intermixing of quantum dots. A linear dependence behavior has been observed for both the non-radiative recombination time and carrier relaxation time on the ion-implantation dose. The maximum enhancement of the photoluminescence is observed in the proton implantation dose of 1.0 x 1014 cm-2 followed by rapid thermal annealing at 700°C. These effects will be useful for the QDs' optoelectronic devices.
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18.
  • Lu, W, et al. (författare)
  • Enhancement of room-temperature photoluminescence in InAs quantum dots
  • 2003
  • Ingår i: Applied Physics Letters. - : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 83:21, s. 4300-4302
  • Tidskriftsartikel (refereegranskat)abstract
    • We report pronounced enhancement of room-temperature photoluminescence up to 80-fold induced by proton implantation and the rapid thermal annealing process in a multilayer InAs/GaAs quantum-dot structure. This effect is studied by a combination of material methods and resulted from both proton passivation and carrier capture enhancement effects. The maximum photoluminescence peak shift is about 23 meV, resulting from the intermixing of quantum dots. Linear dependence behavior as observed for both the nonradiative recombination time and carrier relaxation time on the ion-implantation dose. Maximum enhancement of the photoluminescence is observed for a proton implantation dose of 1.0x10(14) cm(-2) followed by rapid thermal annealing at 700 degreesC. These effects will be useful for quantum dot optoelectronic devices.
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19.
  • Scherer, SW, et al. (författare)
  • Human chromosome 7: DNA sequence and biology
  • 2003
  • Ingår i: Science (New York, N.Y.). - : American Association for the Advancement of Science (AAAS). - 1095-9203 .- 0036-8075. ; 300:5620, s. 767-772
  • Tidskriftsartikel (refereegranskat)abstract
    • DNA sequence and annotation of the entire human chromosome 7, encompassing nearly 158 million nucleotides of DNA and 1917 gene structures, are presented. To generate a higher order description, additional structural features such as imprinted genes, fragile sites, and segmental duplications were integrated at the level of the DNA sequence with medical genetic data, including 440 chromosome rearrangement breakpoints associated with disease. This approach enabled the discovery of candidate genes for developmental diseases including autism.
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20.
  • Sterner, Jan, et al. (författare)
  • Sulfurization of thin film solar cell absorbers
  • 2000
  • Ingår i: Sixteent h European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, May 1-5. ; , s. 771-774
  • Konferensbidrag (refereegranskat)
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  • Resultat 11-20 av 23

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