SwePub
Sök i SwePub databas

  Utökad sökning

Träfflista för sökning "WAKA:ref ;pers:(Liu Johan 1960)"

Sökning: WAKA:ref > Liu Johan 1960

  • Resultat 31-40 av 511
Sortera/gruppera träfflistan
   
NumreringReferensOmslagsbildHitta
31.
  • Banerjee, Debashree, et al. (författare)
  • Elevated thermoelectric figure of merit of n-type amorphous silicon by efficient electrical doping process
  • 2018
  • Ingår i: Nano Energy. - : Elsevier BV. - 2211-2855 .- 2211-3282. ; 44, s. 89-94
  • Tidskriftsartikel (refereegranskat)abstract
    • The currently dominant thermoelectric (TE) materials used in low to medium temperature range contain Tellurium that is rare and mild-toxic. Silicon is earth abundant and environment friendly, but it is characterized by a poor TE efficiency with a low figure of merit, ZT. In this work, we report that ZT of amorphous silicon (a-Si) thin films can be enhanced by 7 orders of magnitude, reaching ∼0.64 ± 0.13 at room temperature, by means of arsenic ion implantation followed by low-temperature dopant activation. The dopant introduction employed represents a highly controllable doping technique used in standard silicon technology. It is found that the significant enhancement of ZT achieved is primarily due to a significant improvement of electrical conductivity by doping without crystallization so as to maintain the thermal conductivity and Seebeck coefficient at the level determined by the amorphous state of the silicon films. Our results open up a new route towards enabling a-Si as a prominent TE material for cost-efficient and environment-friendly TE applications at room temperature.
  •  
32.
  • Bao, Jie, et al. (författare)
  • Application of two-dimensional layered hexagonal boron nitride in chip cooling
  • 2016
  • Ingår i: Yingyong Jichu yu Gongcheng Kexue Xuebao/Journal of Basic Science and Engineering. - 1005-0930. ; 24:1, s. 210-217
  • Tidskriftsartikel (refereegranskat)abstract
    • © 2016, The Editorial Board of Journal of Basic Science and Engineering. All right reserved.Research into layered hexagonal boron nitride(h-BN)has recently intensified, due to its superior physicochemical properties compared to that of a typical two-dimensional material. H-BN can be utilized in power chips as both an insulating layer as well as a heat spreader for local hotspots with high heat flux. Single layer h-BN film grown by CVD and h-BN microparticles are respectively transferred onto the surfaces of the thermal evaluation chips, where the influence of h-BN on the heat dissipation performance of the chips can be observed at different power values. The resistance-temperature curve method and infrared thermal imager are both used to measure the temperature of hotspots on the thermal evaluation chips, which can be reduced by between 3~5℃ at 1W after the transfer of h-BN. The cooling efficiency is improved and it can be found that single layer h-BN film shows better heat dissipation ability.
  •  
33.
  • Bao, Jie, et al. (författare)
  • Measurement of Dielectric Properties of Ultrafine BaTiO3 Using an Organic-Inorganic Composite Method
  • 2015
  • Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 1543-186X .- 0361-5235. ; 44:7, s. 2300-2307
  • Tidskriftsartikel (refereegranskat)abstract
    • Ultrafine BaTiO3, unlike traditional ferroelectric materials, demonstrates some interesting dielectric properties, such as a gradual transition from paraelectric to ferroelectric phase, which is similar to dielectric relaxation ferroelectrics. Although several methods have been recently proposed to measure the dielectric properties of ultrafine BaTiO3, the problem still remains unsolved. This paper proposes a new method to estimate the dielectric properties of ultrafine BaTiO3 by measuring and analyzing the dielectric properties of BaTiO3-epoxy composites. The Novocontrol dielectric measuring system was employed to measure the dielectric response of the composites. The dielectric behavior and relaxation characteristics of the BaTiO3 filler were estimated by modeling and calculating the dielectric constant based on different mixture theories. Results reveal that the effect of surface states yields dielectric relaxation in ultrafine BaTiO3.
  •  
34.
  • Bao, Jie, et al. (författare)
  • Synthesis and Applications of Two-Dimensional Hexagonal Boron Nitride in Electronics Manufacturing
  • 2016
  • Ingår i: Electronic Materials Letters. - : Springer Science and Business Media LLC. - 1738-8090 .- 2093-6788. ; 12:1, s. 1-16
  • Forskningsöversikt (refereegranskat)abstract
    • In similarity to graphene, two-dimensional (2D) hexagonal boron nitride (hBN) has some remarkable properties, such as mechanical robustness and high thermal conductivity. In addition, hBN has superb chemical stability and it is electrically insulating. 2D hBN has been considered a promising material for many applications in electronics, including 2D hBN based substrates, gate dielectrics for graphene transistors and interconnects, and electronic packaging insulators. This paper reviews the synthesis, transfer and fabrication of 2D hBN films, hBN based composites and hBN-based van der Waals heterostructures. In particular, this review focuses on applications in manufacturing electronic devices where the insulating and thermal properties of hBN can potentially be exploited. 2D hBN and related composite systems are emerging as new and industrially important materials, which could address many challenges in future complex electronics devices and systems.
  •  
35.
  • Bao, Jie, 1982, et al. (författare)
  • Two-dimensional hexagonal boron nitride as lateral heat spreader in electrically insulating packaging
  • 2016
  • Ingår i: Journal of Physics D: Applied Physics. - : IOP Publishing. - 1361-6463 .- 0022-3727. ; 49:July 2016, s. 265501-
  • Tidskriftsartikel (refereegranskat)abstract
    • The need for electrically insulating materials with a high in-plane thermal conductivity for lateral heat spreading applications in electronic devices has intensified studies of layered hexagonal boron nitride (h-BN) films. Due to its physicochemical properties, h-BN can be utilised in power dissipating devices such as an electrically insulating heat spreader material for laterally redistributing the heat from hotspots caused by locally excessive heat flux densities. In this study, two types of boron nitride based heat spreader test structures have been assembled and evaluated for heat dissipation. The test structures separately utilised a few-layer h-BN film with and without graphene enhancement drop coated onto the hotspot test structure. The influence of the h-BN heat spreader films on the temperature distribution across the surface of the hotspot test structure was studied at a range of heat flux densities through the hotspot. It was found that the graphene-enhanced h-BN film reduced the hotspot temperature by about 8–10°C at a 1000 W/cm2 heat flux density, a temperature decrease significantly larger than for h-BN film without graphene enhancement. Finite element simulations of the h-BN film predict that further improvements in heat spreading ability are possible if the thermal contact resistance between the film and test chip are minimised.
  •  
36.
  • Bistarelli, Silvia, et al. (författare)
  • Evaluating CNT-Based Interconnects : A Nummerical Tool to Characterize Hybrid CNT-Copper Interconnects
  • 2017
  • Ingår i: IEEE Microwave Magazine. - 1527-3342 .- 1557-9581. ; 18:4, s. 124-129
  • Tidskriftsartikel (refereegranskat)abstract
    • Nanotechnologies offer a vast number of applications due to the unique features of nanostructured materials [1]. In the electronics field, this new technology could open innovative ways to go beyond Moore's law [2], but progress in manufacturing technology still limits the wide dispersion of nanotechnology-based circuits. The bridge between nanoscience and realized devices can be achieved by modeling the multiphysics phenomena at the nanoscale, which will aid in the development of the technology.
  •  
37.
  •  
38.
  •  
39.
  •  
40.
  •  
Skapa referenser, mejla, bekava och länka
  • Resultat 31-40 av 511
Typ av publikation
konferensbidrag (311)
tidskriftsartikel (192)
forskningsöversikt (8)
Typ av innehåll
refereegranskat (511)
Författare/redaktör
Fu, Yifeng, 1984 (93)
Ye, L (68)
Andersson, Cristina, ... (42)
Wang, Teng, 1983 (41)
Zhang, Yong, 1982 (37)
visa fler...
Ye, Lilei (37)
Cheng, Zhaonian, 194 ... (36)
Lai, Zonghe, 1948 (34)
Lu, Xiuzhen (34)
Jeppson, Kjell, 1947 (31)
Zhang, Yan, 1976 (29)
Wang, Nan, 1988 (28)
Zhang, Yan (27)
Zandén, Carl, 1984 (26)
Sun, Shuangxi, 1986 (25)
Jiang, Di, 1983 (25)
Edwards, Michael, 19 ... (23)
Carlberg, Björn, 198 ... (23)
Zhang, Y. (22)
Chen, Si, 1981 (22)
Zehri, Abdelhafid, 1 ... (19)
Mu, Wei, 1985 (19)
Ye, Lilei, 1970 (18)
Nylander, Andreas, 1 ... (17)
Kabiri Samani, Majid ... (16)
Luo, Xin, 1983 (16)
Hu, Zhili, 1983 (16)
Chen, S. (15)
Wang, Nan (15)
Hansson, Josef, 1991 (15)
Huang, S. (14)
Sun, Peng, 1979 (13)
Wang, Xitao (12)
Bao, Jie (12)
Huang, Shirong (12)
Larsson, Ragnar, 196 ... (11)
Shangguan, Dongkai (11)
Nilsson, Torbjörn, 1 ... (11)
Yuan, G. (11)
Liu, Ya, 1991 (11)
Gao, Yulai (9)
Zhai, Qijie (9)
Cao, Liqiang, 1974 (9)
Cui, H (9)
Nkansah, Amos (9)
Lu, X. (8)
Andrae, Anders, 1973 (8)
Shan, B. (8)
Lu, Hongbin (8)
visa färre...
Lärosäte
Chalmers tekniska högskola (510)
Göteborgs universitet (11)
Uppsala universitet (6)
Kungliga Tekniska Högskolan (1)
Linköpings universitet (1)
Jönköping University (1)
visa fler...
Lunds universitet (1)
Karlstads universitet (1)
visa färre...
Språk
Engelska (511)
Forskningsämne (UKÄ/SCB)
Teknik (456)
Naturvetenskap (110)
Medicin och hälsovetenskap (12)

År

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Stäng

Kopiera och spara länken för att återkomma till aktuell vy