| 31. |
- Bamiedakis, N., et al.
(författare)
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40 Gb/s Data Transmission Over a 1-m-Long Multimode Polymer Spiral Waveguide for Board-Level Optical Interconnects
- 2015
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Ingår i: Journal of Lightwave Technology. - 0733-8724 .- 1558-2213. ; 33:4, s. 882-888
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Tidskriftsartikel (refereegranskat)abstract
- Optical interconnects have attracted considerable attention for use in short-reach communication links within high-performance electronic systems, such as data centers, supercomputers, and data storage systems. Multimode polymer waveguides, in particular, constitute an attractive technology for use in board-level interconnects as they can be cost-effectively integrated onto standard PCBs and allow system assembly with relaxed alignment tolerances. However, their highly multimoded nature raises important concerns about their bandwidth limitations and their potential to support very high on-board data rates. In this paper, we report record error-free (BER
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| 32. |
- Bamiedakis, N., et al.
(författare)
-
56 Gb/s PAM-4 data transmission over a 1 m long multimode polymer interconnect
- 2015
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Ingår i: CLEO: Science and Innovations, CLEO-SI 2015, San Jose; United States; 10-15 May 2015. - 9781557529688 ; , s. 2267-
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Konferensbidrag (refereegranskat)abstract
- Advanced modulation formats can enable >40 Gb/s data rates in waveguide-based optical interconnects without the need for high-specification optoelectronic components. Record 56Gb/s PAM-4 data transmission is demonstrated over a 1 m-long multimode polymer waveguide.
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| 33. |
- Baveja, Prashant, 1985, et al.
(författare)
-
Impact of device parameters on thermal performance of high speed oxide confined 850 nm VCSELs
- 2012
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Ingår i: IEEE Journal of Quantum Electronics. - 0018-9197 .- 1558-1713. ; 48:1, s. 17-26
-
Tidskriftsartikel (refereegranskat)abstract
- We study the impact of device parameters, such asinner-aperture diameter and cavity photon lifetime, on thermal rollover mechanisms in 850-nm, oxide-confined, vertical-cavity surface-emitting lasers (VCSELs) designed for high-speed operation. We perform measurements on four different VCSELs of different designs and use our empirical thermal model for calculating the power dissipated with increasing bias currents through various physical processes such as absorption within the cavity, carrier thermalization, carrier leakage, spontaneous carrier recombination, and Joule heating. When reducing the topmirror reflectivity to reduce internal optical absorption loss we find an increase of power dissipation due to carrier leakage. There is therefore a trade-ff between the powers dissipated owing to optical absorption and carrier leakage in the sense that overcompensating for optical absorption enhances carrier leakage (and vice versa). We further find that carrier leakage places the ultimate limit on the thermal performance for this entire class ofdevices. Our analysis yields useful design optimization strategies for mitigating the impact of carrier leakage and should thereby prove useful for the performance enhancement of 850-nm, highspeed, oxide-confined VCSELs.
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| 34. |
- Baveja, P. P., et al.
(författare)
-
Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling
- 2011
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Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 19:16, s. 15490-15505
-
Tidskriftsartikel (refereegranskat)abstract
- We use an empirical model together with experimental measurements for studying mechanisms contributing to thermal rollover in vertical-cavity surface-emitting lasers (VCSELs). The model is based on extraction of the temperature dependence of threshold current, internal quantum efficiency, internal optical loss, series resistance and thermal impedance from measurements of output power, voltage and lasing wavelength as a function of bias current over an ambient temperature range of 15-100 degrees C. We apply the model to an oxide-confined, 850-nm VCSEL, fabricated with a 9-mu m inner-aperture diameter and optimized for highspeed operation, and show for this specific device that power dissipation due to linear power dissipation (sum total of optical absorption, carrier thermalization, carrier leakage and spontaneous carrier recombination) exceeds power dissipation across the series resistance (quadratic power dissipation) at any ambient temperature and bias current. We further show that the dominant contributors to self-heating for this particular VCSEL are quadratic power dissipation, internal optical loss, and carrier leakage. A rapid reduction of the internal quantum efficiency at high bias currents (resulting in high temperatures) is identified as being the major cause of thermal rollover. Our method is applicable to any VCSEL and is useful for identifying the mechanisms limiting the thermal performance of the device and to formulate design strategies to ameliorate them.
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| 35. |
- Baveja, P. P., et al.
(författare)
-
Impact of photon lifetime on thermal rollover in 850-nm high-speed VCSELs
- 2012
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819489197 ; 8276
-
Konferensbidrag (refereegranskat)abstract
- We present an empirical thermal model for VCSELs based on extraction of temperature dependence of macroscopic VCSEL parameters from CW measurements. We apply our model to two, oxide-confined, 850-nm VCSELs, fabricated with a 9-mu m inner-aperture diameter and optimized for high-speed operation. We demonstrate that for both these devices, the power dissipation due to linear heat sources dominates the total self-heating. We further show that reducing photon lifetime down to 2 ps drastically reduces absorption heating and improves device static performance by delaying the onset of thermal rollover. The new thermal model can identify the mechanisms limiting the thermal performance and help in formulating the design strategies to ameliorate them.
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| 36. |
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| 37. |
- Bengtsson, Magnus, et al.
(författare)
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Fluorescence lidar imaging of fungal growth on high-voltage outdoor composite insulators
- 2005
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Ingår i: Optics and Lasers in Engineering. - : Elsevier BV. - 0143-8166 .- 1873-0302. ; 43:6, s. 624-632
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Tidskriftsartikel (refereegranskat)abstract
- Remote fluorescence imaging of fungal growth on polymeric high-voltage insulators was performed using a mobile lidar system with a laser wavelength of 355 nm. Insulator areas contaminated by fungal growth could be distinguished from clean surfaces and readily be imaged. The experiments were supported by detailed spectral studies performed in laboratory using a fibre-optic fluorosensor incorporating an optical multi-channel analyser system (OMA) and a nitrogen laser emitting radiation at 33 7 nm.
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| 38. |
- Berland, Kristian, 1983, et al.
(författare)
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Temperature stability of intersubband transitions in AlN/GaN quantum wells
- 2010
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 97:4, s. 043507-
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Tidskriftsartikel (refereegranskat)abstract
- Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the absorption study, the sample is heated in increments up to 400 degrees C. The self-consistent Schroumldinger-Poisson modeling includes temperature effects of the band gap and the influence of thermal expansion on the piezoelectric field. We find that the intersubband absorption energy decreases only by similar to 6 meV at 400 degrees C relative to its room temperature value.
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| 39. |
- Bickham, S., et al.
(författare)
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Low cutoff G.657-compatible fiber for data center interconnects operating in the 1064 and 1310 nm windows
- 2020
-
Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 11286
-
Konferensbidrag (refereegranskat)abstract
- Optical interconnects in data centers have traditionally used 850 nm GaAs-based vertical-cavity surface-emitting lasers (VCSELs) in combination with multimode fiber, having a reach up to 100 m in length. Longer links typically use standard single-mode fiber in conjunction with either InP-based edge-emitting lasers or silicon photonic transmitters operating in the 1310 nm or 1550 nm window. Single-mode GaAs-based VCSELs operating at 1064 nm offer another path for achieving longer system reach. Potential advantages of these VCSELs include better power efficiency, modulation speeds reaching 50 Gbps and large-scale fabrication volumes. The longer wavelength is also beneficial due to the lower attenuation and chromatic dispersion of optical fibers at that wavelength. However, one practical issue for single-mode transmission is that the G.657 standard for single-mode fiber requires that the 22-meter cable cutoff wavelength be less than 1260 nm, and these fibers are typically few-moded at 1064 nm. The large differences between the group velocities of the LP01 and LP11 modes can lead to degradation of the system performance due to multi-path interference if the higher order modes are present. To resolve this quandary, we have designed and validated the performance of a new optical fiber which is single-moded at wavelengths less than 1064 nm, but also has G.657-compliant mode field diameter and dispersion characteristics that enable it to be used in the 1310 nm window.
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| 40. |
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