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Sökning: swepub > Larsson Anders > Tidskriftsartikel > Sadeghi Mahdad 1964

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21.
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22.
  • Lim, Jun, et al. (författare)
  • Static and dynamic performance optimisation of a 1.3 mu m GaInNAs ridge waveguide laser
  • 2008
  • Ingår i: Optical and Quantum Electronics. - : Springer Science and Business Media LLC. - 0306-8919 .- 1572-817X. ; 40:14-15, s. 1181-1186
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work, we perform a multi-parameter design study to improve the performance of an uncooled directly modulated 1.3 mu m GaInNAs ridge waveguide laser for high speed operation especially at high temperature. The static and dynamic performance of the improved design is analyzed using an accurate in-house 2D electro-opto-thermal laser simulator. The improved structure is shown to have a lower threshold current, higher thermal roll-over limit and higher modulation bandwidth-especially under high temperature operation. The improved structure also has a lower vertical beam divergence compared to a reference structure with a conventional design.
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23.
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24.
  • Lu, W, et al. (författare)
  • Independent determination of In and N concentrations in GaInNAs alloys
  • 2009
  • Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 24:10, s. 105016-
  • Tidskriftsartikel (refereegranskat)abstract
    • High-resolution x-ray diffraction (HRXRD) and photoreflectance ( PR) spectroscopy were used to independently determine the In and N concentrations in GaInNAs alloys grown by solid-source molecular beam epitaxy (SSMBE). The lattice constant and bandgap energy can be expressed as two independent equations in terms of the In and N concentrations, respectively. The HRXRD measurement provided the lattice constant and the PR measurement extracted the bandgap energy. By simultaneously solving these two equations, we have determined the In and N concentrations with the error as small as 0.001.
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26.
  • Lu, W, et al. (författare)
  • Reliability assessment and degradation analysis of 1.3 µm GaInNAs lasers
  • 2009
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 106:9, s. 093110-
  • Tidskriftsartikel (refereegranskat)abstract
    • The degradation of 1.3 mu m GaInNAs lasers was investigated using accelerated aging tests. This was followed by comprehensive characterization, including standard light-current-voltage (L-I-V) characterization, capacitance measurements, photoluminescence microscopy (PLM), on-axis amplified spontaneous emission (ASE) spectra measurements, and photocurrent (PC) and electroluminescence (EL) spectroscopies. The slope efficiency of the device dropped by 50% with a 300% increase in the threshold current after the accelerated aging test. The ideality factors of the aged devices are higher than those of the unaged devices. PLM images showed no evidence of catastrophic optical mirror damage. The measured capacitances of the aged devices are all similar to those of the unaged devices, indicating that there was no significant dopant diffusion in the junction region. Fourier transforms of the ASE spectra showed that no intracavity defects were present in the aged lasers, suggesting that intracavity defects are not responsible for the rapid degradation of the aged devices. Although the PC measurements showed defects at 0.88-0.95 eV and at similar to 0.76 eV, these defect signatures did not increase with aging. On the other hand, EL measurements revealed that radiative deep level defects were generated during the aging tests. which may be related to the degradation of the devices. Based on the above measurement results, we identify, the generation Of radiative deep level defects as the main causes of degradation of these devices.
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27.
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28.
  • Shao, J, et al. (författare)
  • Evolution of Valence-Band Alignment with Nitrogen Content in GaNAs/GaAs Single Quantum Wells
  • 2008
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 93:3, s. Art. Nr. 031904-
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on experimental evidence for the transition of valence-band alignment from type I to type II in Ga Nx As1-x GaAs single quantum wells by photoreflectance measurements. The substitutional nitrogen content covers a range of 1.4%-5.9%. The turning point of the type I-type II transition occurs at x4.7%. The experimental observations can be well interpreted by a combination of band anticrossing model and model-solid theory when nonlinear behavior of either the shear deformation potential or the average valence-band energy is taken into account. The effect of dilute nitrogen on the valence-band offset of GaNAsGaAs quantum well structure is hence clarified. © 2008 American Institute of Physics.
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29.
  • Tångring, Ivar, 1978, et al. (författare)
  • A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy
  • 2009
  • Ingår i: Journal of Crystal Growth. - 0022-0248. ; 311, s. 1684-
  • Tidskriftsartikel (refereegranskat)abstract
    • We investigate the role of p- and n-type doping in strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy. It is found that p-type Be-doping can improve material properties, resulting in smaller surface roughness and lower threading dislocation density, while n-type Si-doping has an opposite effect. The effect is strongly dependent on the grading profile, with linear grading showing small differences, while there is a significant difference when an exponential grading is used. Since doping is essential for many types of devices, these results are useful for improving the material properties and performance of metamorphic devices.
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30.
  • Tångring, Ivar, 1978, et al. (författare)
  • Manipulation of strain relaxation in metamorphic heterostructures
  • 2007
  • Ingår i: Applied Physics Letters. ; 90, s. 071904-
  • Tidskriftsartikel (refereegranskat)abstract
    • The authors have discovered that high doping densities in an alloy graded InGaAs buffer havedramatic effects on strain relaxation dynamics and consequently surface and optical qualities inmetamorphic heterostructures. Compared with undoped graded buffers, the use of Be dopingsignificantly improves structural, surface, and optical qualities while the use of Si dopingdeteriorates all these properties. This discovery is significant for the realization of metamorphicoptoelectronic devices.
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  • Resultat 21-30 av 42
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Lai, Zonghe, 1948 (4)
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Lu, W (4)
Bull, S (4)
Lim, J.J. (4)
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