| 11. |
|
|
| 12. |
|
|
| 13. |
- Jedrasik, Piotr, 1957
(författare)
-
HSQ application for sub-10nm scale lithography.
- 2004
-
Ingår i: Nano and Giga Challenges in Microelectronics, proceedings.
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- An application of hydrogen silsesquioxane (HSQ) negative tone electron beam resist for a sub-10 nanometerscale fabrication is reported.
|
|
| 14. |
- Jedrasik, Piotr, 1957, et al.
(författare)
-
Proximity effects correction for sub-10nm patterning node
- 2010
-
Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819480521 ; 7638
-
Konferensbidrag (refereegranskat)abstract
- In this communication, we report on our experimental results from the research focused on the application of the electron beam direct writing in the nanometer range. Special care is taken to analyze the forward scattering spread and its influence on the pattering fidelity for patterns with the dimensions in the sub-10nm region. We model, simulate and discuss several different cases of the strategy used in the pattern writing. The sub-pixel address grid is used and the energy beam distribution is analyzed with 1 angstrom resolution. The pre-compensated energy distribution is analyzed from its slope cross-sectional point of view. Additionally, the field factor correction (FFC) dose compensation, the correctness of the built-in FFC compensation for the sub-10nm regime, and its influence on the writing speed is discussed. We map the pre-compensated energy distribution used for the pattern exposure to the developed resist profile modeled by the spline approximation of the experimentally acquired resist contrast curve. The newly established development process for the hydrogen silsesquioxane (HSQ) resist has been tested and applied in its optimal way. Successful sub-10nm patterning with the dimension controllability better than 5% of the critical dimension (CD) was achieved. The experimental setup use JBX-9300FS (used @ 100keV) as the exposure tool, and the HSQ (XR-1541) as the resist. The energy intensity distribution (EID) function used for the proximity effects compensation is calculated by CHARIOT simulation engine.
|
|
| 15. |
- Jedrasik, Piotr, 1957, et al.
(författare)
-
Technological and Material Related Challenges for Large Area, High Aspect-Ratio, Near Teradot/Inch(2) Areal Density and Three-Dimensional Structuring of Polyaniline
- 2011
-
Ingår i: Journal of Nanoscience and Nanotechnology. - : American Scientific Publishers. - 1533-4880 .- 1533-4899. ; 11:10, s. 8924-8935
-
Tidskriftsartikel (refereegranskat)abstract
- In this manuscript we report on a newly developed technology for the nanoscale processing of the conducting polyaniline (PANI) with an unprecedented areal patterning order and density control exceeding 0.25 teradot/inch(2). High resolution electron beam lithography was used to generate ordered 2D and 3D templates. A novel type of resist and dose-modulated 3D-electron beam lithography (RDM-3D-EBL), extensively exploiting the intrinsic properties of resist-electron beam interaction is detailed. Surface initiated and template confined aniline polymerization, through catalytic activity of metallic platinum, was then exploited to provide a genuine method for controlled nanoscale processing of polyaniline, a prototypical conjugated polymer that definitively settled the concept of synthetic metals. Using nanoscale polymerization reactors, ultimate resolution patterning and processing control of single polyaniline nanostructures was feasible. Aspects of the nanoscale polyaniline growth mechanism are discussed and the highly controllable, sub-picogram scale fabrication is emphasized. Near teradot/inch(2) pattern transfer technology, complex 3D structuring and physico-chemical functionalization of polyaniline can be subsequently harnessed to build a large variety of architectures with potential for emerging optoelectronic technologies. The method is scalable, can be applied on virtually any type of flexible or rigid substrates and provides a generic approach for nanopatterning surfaces with functional polymers. Technological and material related fabrication challenges are detailed and discussed.
|
|
| 16. |
- Rommel, Marcus, 1987, et al.
(författare)
-
Sub-10 nm resolution after lift-off using HSQ./PMMA double layer resist
- 2013
-
Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 110, s. 123-125
-
Tidskriftsartikel (refereegranskat)abstract
- Hydrogen silesquioxan (HSQ) is a well-investigated negative tone inorganic resist [1,2] which is known for its capabilities for high resolution electron beam lithography (EBL) and its stability against dry etching [3]. In this paper, we introduce a process to create dense structures by EBL utilizing a layer of polymethyl-methacrylate (PMMA) as sacrificial layer beneath a HSQ layer. The sacrificial layer allows a simple lift-off process to remove the HSQ with organic solvents and thus avoids the use of hydrofluoric acid (HF) containing etchants, which is the commonly used HSQ remover [4]. The described double layer resist system allows patterning on substrates that are not HF compatible such as glass or oxide compounds, achieving a high resolution down to the sub-10 nm regime. Despite the use of a double layer resist, this process is applicable for arbitrarily large areas due to the remaining PMMA underneath the HSQ and the avoidance of undercuts.
|
|
| 17. |
- Stockhausen, A., et al.
(författare)
-
Adjustment of self-heating in long superconducting thin film NbN microbridges
- 2012
-
Ingår i: Superconductor Science and Technology. - : IOP Publishing. - 0953-2048 .- 1361-6668. ; 25:3
-
Tidskriftsartikel (refereegranskat)abstract
- The self-heating in long superconducting microbridges made from thin NbN films deposited on top of high silicon mesa structures was studied by analyzing the hysteresis current density j(H). We observed a more than twofold decrease of j(H) with increase in the ratio of the height of the Si mesa, h, to the width of the microbridge, W, from 0 to 24. We describe our experimental results using one-dimensional thermal balance equations taking into account disordered matter in our thin NbN films and limitations imposed on the phonon mean free path by the width of the Si mesa. In the framework of this model we obtain a good agreement between theory and experiment over a wide temperature range from 4.2 K up to the critical temperature T-C for all h/W ratios.
|
|
| 18. |
- Tsunoda, D., et al.
(författare)
-
Proximity effect correction for 20nm dimension patterning
- 2009
-
Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819475244 ; 7271
-
Konferensbidrag (refereegranskat)abstract
- Electron Beam Direct Writing (EBDW) has been applied to various applications such as prototyping or small amount production of electronic devices. Originally, proximity effect in EBDW is considered as the problem of the background energy difference caused by the pattern density distribution. However, the critical dimensions of target patterns are getting smaller, we cannot ignore influences of the forward scattering. Theoretically, when the critical dimension is close to 3 or 4 times of forward scattering range, influence cannot be ignored. For example, in case ofthat corresponds, fabricating 20 nm dimension patterns by Nano Imprint Lithography (NIL) which is significant candidate of next generation lithography technology. Because it requires original dimension (1:1) mold. Therefore proximity effect correction (PEC) system which considers the forward scattering must be important. We developed simulation-based proximity effect correction system combined with data format conversion, works on Linux PC cluster. And we exposed the patterns which are dose compensated by this system. Firstly, we have speculated parameters about backward scattering parameters by exposing 100 nm line and space patterns. We got following parameters, beta (backward scattering range) = 32 urn, eta (backward scattering coefficient) = 2.5. Secondary, we have exposed Line and Space patterns whose dimensions are from 20 nm to 100 nm. We found that smaller and dense patterns have trend to be over exposed and bigger. Experimental specification is following, EB Direct Writing system is JBX-9300FS (lOOkeV ace. Voltage) by JEOL co.ltd, (Japan) , resist is HSQ (FOx 12) by Dow Coming co. (United States), substrate is Si.
|
|
| 19. |
- Vlad, A., et al.
(författare)
-
Highly Ordered Conjugated Polymer Nanoarchitectures with Three-Dimensional Structural Control
- 2009
-
Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 9:8, s. 2838-2843
-
Tidskriftsartikel (refereegranskat)abstract
- Conductive polymers are a class of materials with vast potential for tomorrow's ultra-large-scale technologies as they combine structural and functional diversity with flexible synthesis and processing approaches. A missing component, with their subtle chemical structure, is reliable building at nanoscale. Here we report on the patterning of polyaniline, a prototypical conjugated polymer, with an unprecedented areal patterning order and density exceeding 0.25 teradot/inch(2), With template-confined growth, through platinum-surface-catalyzed polymerization of aniline, highly ordered arrays of distinct polyaniline nanowires are produced with a typical diameter
|
|
| 20. |
- Vlad, A., et al.
(författare)
-
Hybrid synthesis and processing schemes for highly-ordered polyaniline nanoarchitectures
- 2010
-
Ingår i: INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. - 9781424435449 ; , s. 429-430
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- We report on a newly developed technology for the nanoscale processing of the conducting polyaniline (PANI) with an unprecedented areal patterning order and density control exceeding 0.25 teradot/inch 2 . A simple two-step process is put forward to hierarchically build a large variety of functional PANI nanostructures on virtually any type of flexible or rigid substrates. Using template confinement, through Pt catalyzed electroless growth, highly-ordered arrays of distinct PANI nanowires are produced. Complex three-dimensional (3D) structural control is achieved through a direct pattern transfer using a novel type of resist- and dose-modulated 3D electron beam lithography. The method is scalable and provides a generic approach for nanopatterning surfaces with functional polymers. Aspects of the nanoscale PANI growth mechanism are discussed and the highly controllable, sub-picogram scale fabrication is emphasized. Simple schemes for single PANI nanowire fabrication, processing and device integration are presented. ©2010 IEEE.
|
|
