31. |
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32. |
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33. |
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34. |
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35. |
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36. |
- Engström, Olof, 1943, et al.
(författare)
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Electrical characterization of bonding interfaces
- 1992
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Ingår i: Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications. ; , s. 295-
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Konferensbidrag (refereegranskat)abstract
- An overview is given on measurement techniques and results obtained for the characterization of bonded Si-Si, Si-SiO2 and SiO2-SiO2 interfaces. The electrical properties of Si-Si interfaces are found to be very similar to those of grain boundaries, which suggests a model where the current across the interface is limited by a potential barrier determined by charge carriers captures into electron states at the bonded interface. From current-voltage and capacitance-voltage measurements, the interface charge and its energy distribution can be determined. For bonded Si-SiO2 interfaces, energy states distributions are obtained by capacitance voltage technique with midgap densities in the region at or above 5 1010 eV-1 cm-2. Interfaces between two bonded SiO2 layers exhibit an increased concentration of electron traps
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37. |
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38. |
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39. |
- Engström, Olof, 1943, et al.
(författare)
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Electron capture at InAs/GaAs quantum dots
- 2004
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Ingår i: 8th International Conference on Nanometer Scale Science and Technology, Venice, Italy, 2004.
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Konferensbidrag (refereegranskat)
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40. |
- Engström, Olof, 1943, et al.
(författare)
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Electron capture cross sections of InAs/GaAs quantum dots
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85:14, s. 2908-2910
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Tidskriftsartikel (refereegranskat)abstract
- The thermal emission rates of electrons from InAs/GaAs quantum dots were measured, to found the capture cross sections in the extremely high region of 10-11-10-10 cm2. An additional method based on a static measurement at thermal equilibrium was used where the Fermi level was positioned at the free energy level of the quantum dot s shell. A Schottky diode with a plane of QDs grown in its depletion region and back-biased in such a way that the Fermi level coincides with the electron energy level. The Fermi level passes the lowest energy level of the QD, at the voltage marked by Vp in the graphs.
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