| 1. |
- Cijvat, Ellie, et al.
(författare)
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CMOS Transceiver Front-Ends in Mobile Communication Handsets : Architectures and Building Blocks
- 2004
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- For mobile communication systems in the low-GHz range, CMOS has increasingly become the technology of choice, and the level of integration in mobile handsets has risen. The use of off-chip components, which increases the handset assembly time and costs, is preferably avoided. However, integrating a complete transceiver on a single chip leads to disturbances between building blocks. This imposes new and more stringent requirements on building block and transceiver performance, as well as impacts the choice of transceiver architecture.In the general introduction, an overview is given of front-end receiver and transmitter aspects as well as RF CMOS technology. This includes the impact of mobile communication system specifications on architectures and building blocks, transistor and monolithic inductor modeling, and disturbance issues. Special attention is given to power amplifiers, the most challenging building blocks in CMOS transceivers. Papers I, II and III address CMOS receiver front-end aspects and implementations, while in papers IV and V design and challenges of CMOS power amplifiers are described.
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| 2. |
- Cijvat, Pieternella, et al.
(författare)
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A fully integrated 2.45 GHz 0.25 mu m CMOS power amplifier
- 2003
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Ingår i: Proceedings of the 10th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2003.. - : IEEE Press. - 0780381637 ; , s. 1094-1097
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Konferensbidrag (refereegranskat)abstract
- A fully integrated differential class-AB power amplifier has been designed in a 0.25 um CMOS technology. It is intended for medium output power ranges such as Bluetooth class 1, and has an operating frequency of 2.45 GHz. By using two parallel output stages that can be switched on or off, a high efficiency can be achieved for both high and low output power levels. The simulated maximum output power is 22.7 dBm, while the maximum power-added efficiency is 22%.
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