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Advanced Materials for Agriculture, Food and Environmental Safety
- 2014
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Samlingsverk (redaktörskap) (övrigt vetenskapligt/konstnärligt)abstract
- The levels of toxic and microbial contamination in the food and environment are influenced by harvesting or slaughtering technologies and by the processes applied during food manufacture. With current cultivation methods, it is impossible to guarantee the absence of pesticides and pathogenic microorganisms in raw foods, both of plant and animal origin. Widespread and increasing incidence of foodborne diseases and the resulting social and economic impact on the world population have brought food and environmental safety to the forefront of ecological safety and public health concerns. The emerging field of advanced materials based on functional architectures offers potential solutions to some of the key performance challenges along with the improved sensitivity, longevity, stability, miniaturization and ruggedness, while reducing complexity and production cost. The overall purpose of this book is to generate new solutions to the technical challenges in easy and rapid detections of food toxicants, microorganisms and environmental pollutants. The book focuses on the role of advanced materials in the food, water and environmental applications. The monitoring of harmful organisms and toxicants in water, food and beverages is mainly discussed in the respective chapters. The senior contributors write on the following topics:Layered double hydroxides and environmentCorrosion resistance of aluminium alloys of silanesNew generation material for the removal of arsenic from waterPrediction and optimization of heavy clay products qualityEnhancement of physical and mechanical properties of fiberEnvironment friendly acrylates laticesNanoparticles for trace analysis of toxinsRecent development on gold nanomaterial as catalyst Nanosized metal oxide based adsorbents for heavy metal removalPhytosynthesized transition metal nanoparticles- novel functional agents for textilesKinetics and equilibrium modelingMagnetic nanoparticles for heavy metal removalPotential applications of nanoparticles as antipathogensGas barrier properties of biopolymer based nanocomposites: Application in food packingApplication of zero-valent iron nanoparticles for environmental clean upEnvironmental application of novel TiO2 nanoparticles
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| 3. |
- Asghar, M., et al.
(författare)
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Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy
- 2012
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Ingår i: Physica B: Condensed Matter. - : Elsevier. - 0921-4526.
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Konferensbidrag (refereegranskat)abstract
- In this study deep level transient spectroscopy has been performed on boron-nitrogen co-doped 6H-SiC epilayers exhibiting p-type conductivity with free carrier concentration (N-A-N-D)similar to 3 x 10(17) cm(-3). We observed a hole H-1 majority carrier and an electron E-1 minority carrier traps in the device having activation energies E-nu + 0.24 eV, E-c -0.41 eV, respectively. The capture cross-section and trap concentration of H-1 and E-1 levels were found to be (5 x 10(-19) cm(2), 2 x 10(15) cm(-3)) and (1.6 x 10(-16) cm(2), 3 x 10(15) cm(-3)), respectively. Owing to the background involvement of aluminum in growth reactor and comparison of the obtained data with the literature, the H-1 defect was identified as aluminum acceptor. A reasonable justification has been given to correlate the E-1 defect to a nitrogen donor.
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| 4. |
- Asghar, M., et al.
(författare)
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Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method
- 2012
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Ingår i: Physica B: Condensed Matter. - : Elsevier. - 0921-4526.
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Konferensbidrag (refereegranskat)abstract
- Deep level transient spectroscopy (DLTS) is employed to study deep level defects in n-6H-SiC (silicon carbide) epilayers grown by the sublimation method. To study the deep level defects in n-6H-SiC, we used as-grown, nitrogen doped and nitrogen-boron co-doped samples represented as ELS-1, ELS-11 and ELS-131 having net (N-D-N-A) similar to 2.0 x 10(12) cm(-3), 2 x 10(16) cm(-3) and 9 x 10(15) cm(3), respectively. The DLTS measurements performed on ELS-1 and ELS-11 samples revealed three electron trap defects (A, B and C) having activation energies E-c - 0.39 eV, E-c - 0.67 eV and E-c - 0.91 eV, respectively. While DLTS spectra due to sample ELS-131 displayed only A level. This observation indicates that levels B and C in ELS-131 are compensated by boron and/or nitrogen-boron complex. A comparison with the published data revealed A, B and C to be E-1/E-2, Z(1)/Z(2) and R levels, respectively.
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| 6. |
- Beshkova, Milena, et al.
(författare)
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Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
- 2010
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Ingår i: Materials Science Forum, Vols. 645-648. - : Transtec Publications; 1999. ; , s. 183-186
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Konferensbidrag (refereegranskat)abstract
- 3C-SiC layers have been grown by using sublimation epitaxy at a temperature of 2000 degrees C, on different types of on-axis 6H-SiC(0001) substrates. The influence of the type of substrate on the morphology of the layers investigated by Atomic Force Microscopy (AFM) is discussed. Stacking faults are studied by reciprocal space map (RSM) which shows that double positions domains exists.
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| 7. |
- Beshkova, Milena, 1975-, et al.
(författare)
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Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
- 2009
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Ingår i: ECSCRM2009,2009. - Materials Science Forum Vols. 615-617 : Trans Tech Publications. - 9780878493340 ; , s. 181-184
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Konferensbidrag (refereegranskat)abstract
- The present paper deals with morphological and structural investigation of 3C-SiC layers grown by sublimation epitaxy on on axis 6H-SiC(0001) at source temperature 2000 °C, under vacuum conditions (<10-5 mbar) and different temperature gradients in the range of 5-8 °C/mm. The layer grown at a temperature gradient 6 °C/mm has the largest average domain size of 0.4 mm2 assessed by optical microscope in transmission mode. The rocking curve full width at half maximum (FWHM) of (111) reflection is 43 arcsec which suggests good crystalline quality. The AFM image of the same layer shows steps with height 0.25 nm and 0.75 nm which are characteristic of a stacking fault free 3C-SiC surface and c-axis repeat height, respectively.
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| 8. |
- Beshkova, Milena, et al.
(författare)
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Sublimation epitaxy of 3C-SiC grown at Si- and C-rich conditions
- 2012
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Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 86:10, s. 1595-1599
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Tidskriftsartikel (refereegranskat)abstract
- 3C-SiC layers have been grown by using sublimation epitaxy at a source temperature of 2000 degrees C, under vacuum conditions (andlt;10(-5) mbar) on well oriented (on-axis) 6H-SiC (0001) substrates. Close space sublimation growth geometry has been used in a RF-heated furnace employing high-purity graphite crucible with a possibility to change the growth environment from Si vapor-rich to C vapor-rich. The optical microscopy in transmission mode reveals continuous 3C-domains for 3C-SiC with less than 0.4% 6H-inclusions for the layer grown at Si-rich conditions, and separate 3C-SiC domains for the layer grown at C-rich conditions. The type of 6H-inclusions for layers with continuous domain structure investigated by Atomic Force Microscopy (AFM) is discussed. 2Theta-omega scan shows 0006 and 111 peaks coming from the substrate and the layer, respectively with a higher intensity of the 111 peak for 3C-SiC grown at Si-rich conditions which is related with the continuous character of the 3C-SiC domains.
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| 9. |
- Bikbajevas, V, et al.
(författare)
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Impact of phonon drag effect on Seebeck coefficient in p-6H-SiC : Experiment and simulation
- 2003
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Ingår i: Materials Science Forum, Vols. 433-436. ; , s. 407-410
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Konferensbidrag (refereegranskat)abstract
- The temperature dependence of Seebeck coefficient (S) for p-6H-SiC has been obtained. It increases from 2 up to 5.2 mV/K when temperature decreases from 400 down to 240 K. It is shown that phonon drag effect makes critical contribution to the S value. Improved theoretical model involving 4-phonon scattering process has been proposed for the simulation of Seebeck coefficient phonon pail.
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| 10. |
- Christle, David J., et al.
(författare)
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Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface
- 2017
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Ingår i: Physical Review X. - : AMER PHYSICAL SOC. - 2160-3308. ; 7:2
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Tidskriftsartikel (refereegranskat)abstract
- The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a high-fidelity spin-photon interface, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here, we demonstrate that such an interface exists in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have a millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on Si shows promise for future quantum networks based on SiC defects.
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