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- Davani, Hooman A., et al.
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Polarization investigation of a tunable high-speed short-wavelength bulk-micromachined MEMS-VCSEL
- 2012
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In: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819489197 ; 8276, s. Art. no. 82760T-
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Conference paper (peer-reviewed)abstract
- We report the investigation of the state of polarization (SOP) of a tunable vertical-cavity surface-emitting laser (VCSEL) operating near 850 nm with a mode-hop free single-mode tuning range of about 12 nm and an amplitude modulation bandwidth of about 5 GHz. In addition, the effect of a sub-wavelength grating on the device and its influence on the polarization stability and polarization switching has been investigated. The VCSEL with an integrated sub-wavelength grating shows a stable SOP with a polarization mode suppression ratio (PMSR) more than 35 dB during the tuning.
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| 64. |
- Davani, Hooman A., et al.
(author)
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Widely Electro Thermal Tunable Bulk-Micromachined MEMS-VCSEL Operating Around 850nm
- 2011
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In: Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011; Sydney; Australia; 28 August 2011 through 1 September 2011. - 2162-2701. - 9780977565771 ; , s. 32-34
-
Conference paper (peer-reviewed)abstract
- We present the highest reported continues tuning range of 37 nm and fastest electro thermal tuning speed of 700 Hz achieved with tunable vertical-cavity surface-emitting lasers (VCSEL) and semiconductor DBRs at 850 nm wavelength range.
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| 65. |
- Davani, Hooman A., et al.
(author)
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Widely tunable high-speed bulk-micromachined short-wavelength MEMS-VCSEL
- 2010
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In: Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International. - 0899-9406. - 9781424456833 ; , s. 9-10
-
Conference paper (peer-reviewed)abstract
- We present the first results of a high-speed bulk-micromachined tunable vertical-cavity surface-emitting laser (VCSEL) operating near 850nm using a half-symmetric resonator with a movable curved microelectromechanical system (MEMS) membrane.
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| 66. |
- Dumitrescu, Mihail, et al.
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10 Gb/s uncooled dilute nitride optical transmitters operating at 1300 nm
- 2009
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In: 2009 Conference on Optical Fiber Communication, OFC 2009; San Diego, CA; United States; 22 March 2009 through 26 March 2009. - Washington, D.C. : OSA. - 9781557528650
-
Conference paper (peer-reviewed)abstract
- Dilute-nitride lasers with record performances have been used to build uncooled transceivers and failure free 10 Gb/s optical transmission was achieved over 815 m of multimode Corning InfiniCor fiber under the LRM standard.
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Un-Cooled 10 Gb/s dilute-nitride optical transmitters for the 1300 nm wavelength range
- 2008
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In: 2008 International Semiconductor Conference, CAS 2008; Sinaia; Romania; 13 October 2008 through 15 October 2008. - 9781424420049 ; 1, s. 61-70
-
Conference paper (peer-reviewed)abstract
- Dilute-nitride-based edge-emitting Fabry-Perot lasers with record performances have been used to build un-cooled optical transceiver modules. The paper presents and analyses some of the achieved performances starting from chip level to optical link transmission experiments. The studies, performed within the EU-FP6 project FAST ACCESS, prove that the dilute-nitride GaInAsN lasers are a good solution for low-cost un-cooled transmitters targeting short and medium distance optical communications in a wide range of applications, from supercomputers and server farms to metropolitan and access area networks.
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- Ferdos, Fariba, 1966, et al.
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Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots
- 2002
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:7, s. 1195-7
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Journal article (peer-reviewed)abstract
- In this letter we investigate the changes in the surface morphology and emission wavelength of InAs quantum dots (QDs) during initial GaAs encapsulation by atomic force microscopy and photoluminescence. The density (2.9×1010 cm-2) and height (7.9±0.4 nm) of the uncapped QDs decrease and saturate at 0.6×1010 cm-2 and 4 nm, respectively, after the deposition of 4 monolayers (MLs) of GaAs. A model for the evolution of surface morphology is proposed. Photoluminescence spectra of the surface dots show a wavelength shift from 1.58 to 1.22 ?m when the GaAs capping layer thickness increases from 0 to 8 MLs.
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- Ferdos, Fariba, 1966, et al.
(author)
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Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy
- 2003
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In: Journal of Crystal Growth. - 0022-0248. ; 251:1-4, s. 145-9
-
Journal article (peer-reviewed)abstract
- Capping of InAs quantum dots (QDs) with AlAs or GaAs causes a significant change in the structural properties of the QDs. However, there is a basic difference between these two capping materials. The GaAs capping causes a dramatic reduction of the dot density and height. AlAs capping, on the other hand, results in a partly suppressed height reduction and a higher dot density.
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