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Sökning: swepub > Larsson Anders > Larsson Anders 1957 > Haglund Åsa 1976

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51.
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52.
  • Larsson, Anders, 1957, et al. (författare)
  • High speed low current density 850 nm VCSELs
  • 2010
  • Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819480118 ; 7615, s. 761505-1-11-
  • Konferensbidrag (refereegranskat)abstract
    • The design of an oxide confined 850 nm VCSEL has been engineered for high speed operation at low current density. Strained InGaAs/AlGaAs QWs, with a careful choice of In and Al concentrations based on rigorous band structure and gain calculations, were used to increase differential gain and reduce threshold carrier density. Various measures, including multiple oxide layers and a binary compound in the lower distributed Bragg reflector, were implemented for reducing capacitance and thermal impedance. Modulation bandwidths > 20 GHz at 25°C and > 15 GHz at 85°C were obtained. At room temperature, the bandwidth was found to be limited primarily by the still relatively large oxide capacitance, while at 85°C the bandwidth was also limited by the thermal saturation of the resonance frequency. Transmission up to 32 Gb/s (on-off keying) over multimode fiber was successfully demonstrated with the VCSEL biased at a current density of only 11 kA/cm2. In addition, using a more spectrally efficient modulation format (16 QAM sub-carrier multiplexing), transmission at 40 Gb/s over 200 m multimode fiber was demonstrated.
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53.
  • Larsson, Anders, 1957, et al. (författare)
  • High-speed tunable and fixed-wavelength VCSELs for short-reach optical links and interconnects
  • 2012
  • Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819489197 ; 8276, s. Article Number: 82760H-
  • Konferensbidrag (refereegranskat)abstract
    • This paper presents a review of recent work on high speed tunable and fixed wavelength vertical cavity surface emitting lasers (VCSELs) at Chalmers University of Technology. All VCSELs are GaAs-based, employ an oxide aperture for current and/or optical confinement, and emit around 850 nm. With proper active region and cavity designs, and techniques for reducing capacitance and thermal impedance, our fixed wavelength VCSELs have reached a modulation bandwidth of 23 GHz, which has enabled error-free 40 Gbps back-to-back transmission and 35 Gbps transmission over 100 m of multimode fiber. A MEMS-technology for wafer scale integration of tunable high speed VCSELs has also been developed. A tuning range of 24 nm and a modulation bandwidth of 6 GHz have been achieved, enabling error-free back-to-back transmission at 5 Gbps.
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54.
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55.
  • Larsson, Anders, 1957, et al. (författare)
  • High speed VCSELs for optical interconnects
  • 2012
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467317252 ; , s. 269-272
  • Konferensbidrag (refereegranskat)abstract
    • This paper presents an overview of our recent work on high speed, oxide confined, 850 nm vertical cavity surface emitting lasers (VCSELs). With proper active region and cavity designs, and techniques for reducing capacitance and thermal impedance, we have reached a modulation bandwidth of 23 GHz and demonstrated 40 Gbps transmission. Using an integrated mode filter for reducing the spectral width we have extended the reach on multimode fiber at 25 Gbps from 100 to 500 m. Improved link capacity was also demonstrated using a more spectrally efficient multi-level modulation format (4-PAM). Finally, a MEMS-technology for wafer scale integration of tunable high speed VCSELs was developed, enabling a tuning range of 24 nm, a 6 GHz modulation bandwidth, and 5 Gbps transmission.
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56.
  • Larsson, Anders, 1957, et al. (författare)
  • High speed VCSELs for short reach communication
  • 2011
  • Ingår i: Semiconductor Science and Technology. - 1361-6641 .- 0268-1242. ; 26:1, s. 014017-1-5-
  • Tidskriftsartikel (refereegranskat)abstract
    • We present the design of a high-speed 850 nm multimode vertical cavity surface-emitting laser (VCSEL) and demonstrate record performance in terms of small signal modulation bandwidth (23 GHz) and error-free operation at high bit rates (40 Gb s−1). The large bandwidth was enabled by an active region design for large differential gain and small gain compression, a low reflectivity top mirror for photon lifetime reduction and multiple oxide layers for a reduction of the capacitance. Error-free operation at 40 Gb s−1 was achieved in a back-to-back configuration with less than 0 dBm of received optical power.
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57.
  • Larsson, Anders, 1957, et al. (författare)
  • VCSELs for broadband access and interconnects
  • 2009
  • Ingår i: Proc. 2009 International Nano-Optoelectronics Workshop, Stockholm-Berlin, August 2009. ; , s. 87-88
  • Konferensbidrag (refereegranskat)
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58.
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59.
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60.
  • Ou, Yiyu, et al. (författare)
  • Impedance characteristics and parasitic speed limitations of high speed 850 nm VCSELs
  • 2009
  • Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 21, s. 1840-
  • Tidskriftsartikel (refereegranskat)abstract
    • Abstract—The impedance characteristics of high-speed oxideconfined 850-nm vertical-cavity surface-emitting lasers have been studied with the aim of identifying the importance of device parasitics for the modulation bandwidth. Through equivalent circuit modeling, it is confirmed that device parasitics have a major impact on the bandwidth and the importance of each individual circuit element has been investigated. According to the extrapolation of the parameters derived from S11 measurements below 20 GHz towards higher frequencies and assuming that the mesa capacitance can be reduced by adding a few extra oxide layers without significantly affecting series resistance, our model predicts that the 3-dB parasitic frequency can be increased from 22 to above 30 GHz. Accounting also for bandwidth limitations due to thermal effects, we expect an increase of the modulation bandwidth of several gigahertz which may enable direct current modulation at 40 Gb/s.
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  • Resultat 51-60 av 83
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